Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3.

Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in β-Ga2O3, an ultra-wide band gap oxide, by controlling hydrogen incorporation in the lattice without further doping. Hydrogen induced a 9-order of magnitude increase of n-type conductivity with donor ionization energy of 20 meV and resistivity of 10-4 Ω.cm. The conductivity was switched to p-type with acceptor ionization energy of 42 meV by altering hydrogen incorporation in the lattice. Density functional theory calculations were used to examine hydrogen location in the Ga2O3 lattice and identified a new donor type as the source of this remarkable n-type conductivity. Positron annihilation spectroscopy measurements confirm this finding and the interpretation of the experimental results. This work illustrates a new approach that allows a tunable and reversible way of modifying the conductivity of semiconductors and it is expected to have profound implications on semiconductor field. At the same time, it demonstrates for the first time p-type and remarkable n-type conductivity in Ga2O3 which should usher in the development of Ga2O3 devices and advance optoelectronics and high-power devices

Enhanced flux pinning isotropy by tuned nanosized defect network in superconducting YBa2Cu3O6+x films

Striving to improve the critical current density Jc of superconductingYBa(2)Cu(3)O(6+x) (YBCO) thin films via enhanced vortex pinning, the interplay between film growth mechanisms and the formation of nanosized defects, both natural and artificial, is systematically studied in undoped and BaZrO3 (BZO)-doped YBCO thin films. The films were grown via pulsed laser deposition (PLD), varying the crystal grain size of the targets in addition to the dopant content. The microstructure of the PLD target has been observed to have a great impact on that of the deposited thin films, including the formation of vortex pinning centers, which has direct implications on the superconducting performance, especially on the isotropy of flux pinning properties. Based on experimentally measured angular dependencies of Jc, coupled with a molecular dynamics (MD) simulation of flux pinning in the YBCO films, we present a quantitative model of how the splay and fragmentation of BZO nanorods artifically introduced into the YBCO film matrix explain the majority of the observed critical current anisotropy

TiO2 phase engineering by millisecond range annealing for highly efficient photocatalysis

Air pollution and the energy crisis are the two main driving forces behind the development of alternative, environmentally friendly methods of energy production. Photoactive materials can be used both to clean the air and to produce green hydrogen for clean energy. Transition metal oxides are one of the most considered materials for high-performance photocatalysis. In this work, we investigate the effect of millisecond flash lamp annealing (FLA) of TiO2 on the degradation of methyl blue (MB) and methyl orange (MO). To reduce the energy consumption of the TiO2 deposition process, the layers were made using magnetron sputtering at room temperature followed by millisecond FLA. By controlling the flash energy input, we can tune the phase formation of TiO2 films from pure anatase to mixed anatase/rutile phases. Scanning electron microscopy, positron annihilation spectroscopy, photoluminescence, and X-ray diffraction studies show that the crystal size and film quality increase with increasing annealing temperature. Photocatalytic experiments demonstrate that FLA-treated TiO2 films are active in degrading both MB and MO. This makes them attractive not only for the production of green hydrogen but also for the purification of water from medical contaminantsTED2021-129876B-I0

Exploring the anti-site disorder and oxygen vacancies in Sr2FeMoO6 thin films

AbstractTo address the importance of nanoscale defects in complex magnetic oxides, we present an effective tool, variable energy positron annihilation spectroscopy, for probing the relatively small changes in anti-site disorder and oxygen vacancies of the in situ annealed double perovskite SrFeMoO thin films. By controlling the annealing conditions in wide pressure and temperature ranges and thus affecting the amount of nanoscale defects, we show that the magnetic properties of SrFeMoO thin films can be modified, particularly with the oxygen nonstoichiometry, and hence their spintronic functionality can be improved. On the basis of our findings together with proposed mechanism, we suggest that the annealing treatments can also be scaled to other complex magnetic perovskites to engineer nanoscale defects and thus improve their usability in future spintronic applications.</p

Purely antiferromagnetic magnetoelectric random access memory

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics

Purely Antiferromagnetic Magnetoelectric Random Access Memory

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50 fold reduction of the writing threshold compared to ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes of these novel systems, we construct a comprehensive model of the magnetoelectric selection mechanism in thin films of magnetoelectric antiferromagnets. We identify that growth induced effects lead to emergent ferrimagnetism, which is detrimental to the robustness of the storage. After pinpointing lattice misfit as the likely origin, we provide routes to enhance or mitigate this emergent ferrimagnetism as desired. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in purely antiferromagnetic spintronics devices.Comment: Main text (4 figures) + supplementary information (7 figures

Regulating oxygen ion transport at the nanoscale to enable highly cyclable magneto-ionic control of magnetism

Altres ajuts: acords transformatius de la UABMagneto-ionics refers to the control of magnetic properties of materials through voltage-driven ion motion. To generate effective electric fields, either solid or liquid electrolytes are utilized, which also serve as ion reservoirs. Thin solid electrolytes have difficulties to (i) withstand high electric fields without electric pinholes and (ii) maintain stable ion transport during long-term actuation. In turn, the use of liquid electrolytes can result in poor cyclability, thus limiting their applicability. Here we propose a nanoscale-engineered magneto-ionic architecture (comprising a thin solid electrolyte in contact with a liquid electrolyte), that drastically enhances cyclability while preserving sufficiently high electric fields to trigger ion motion. Specifically, we show that the insertion of a highly nanostructured (amorphous-like) Ta layer (with suitable thickness and electric resistivity) between a magneto-ionic target material (i.e., Co3O4) and the liquid electrolyte, increases magneto-ionic cyclability from < 30 cycles (when no Ta is inserted) to more than 800 cycles. Transmission electron microscopy together with variable energy positron annihilation spectroscopy reveal the crucial role of the generated TaOx interlayer as a solid-electrolyte (i.e., ionic conductor) that improves magneto-ionic endurance by proper tuning of the types of voltage-driven structural defects. The Ta layer is very effective in trapping oxygen and hindering O2- ions from moving into the liquid electrolyte, thus keeping O2- motion mainly restricted between Co3O4 and Ta when voltage of alternating polarity is applied. We demonstrate that this approach provides a suitable strategy to boost magneto-ionics by combining the benefits of solid and liquid electrolytes in a synergetic manner