Wavelength-selective ultraviolet (Mg,Zn)O photodiodes: Tuning of parallel composition gradients with oxygen pressure

We report on ultraviolet photodiodes with integrated optical filter based on the wurtzite (Mg,Zn)O thin films. Tuning of the bandgap of filter and active layers was realized by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. Filter and active layers of the device were deposited on opposite sides of a sapphire substrate with nearly parallel compositional gradients. Ensure that for each sample position the bandgap of the filter layer blocking the high energy radiation is higher than that of the active layer. Different oxygen pressures during the two depositions runs. The absorption edge is tuned over 360 meV and the spectral bandwidth of photodiodes is typically 100 meV and as low as 50 meV

Non-linear optical deformation potentials in uniaxially strained ZnO microwires

The emission properties of bent ZnO microwires with diameters ranging from 1.5  μm to 7.3  μm are systematically investigated by cathodoluminescence spectroscopy at T ≈ 10 K. We induced uniaxial strains along the c-axis of up to ±2.9 %. At these high strain values, we observe a nonlinear shift of the emission energy with respect to the induced strain, and the magnitude of the energy shift depends on the sign of the strain. The linear and non-linear deformation potentials were determined to be D1=−2.50±0.05 eV and D2=−15.0±0.5 eV, respectively. The nonlinearity of the energy shift is also reflected in the observed spectral broadening of the emission peak as a function of the locally induced strain, which decreases with increasing strain on the compressive side and increases on the tensile side

Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1-x)2O3

UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (InxGa1–x)2O3 thin film with a monotonic lateral variation of 0.0035<x<0.83. Such layer was deposited by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. The photo response signal is provided from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes fabricated from indium-rich part of the sample, for which an internal gain mechanism could be identified. VC 2016 AIP Publishing LLC

Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

We demonstrate that excitons in semiconductor alloys are subject to competing localization effects due to disorder (random potential fluctuations) and shallow point defects (impurities). The relative importance of these effects varies with alloy chemical composition, impurity activation energy as well as temperature. We evaluate this effect quantitatively for MgxZn1−xO : Al (0 6 x 6 0.058) and find that exciton localization at low (2 K) and high (300 K) temperatures is dominated by shallow donor impurities and alloy disorder, respectively

Lattice parameters and Raman-active phonon modes of β-(AlxGa1−x)2O3

We present X-ray diffraction and Raman spectroscopy investigations of a (100)-oriented (AlxGa1–x)2O3 thin film on MgO (100) and bulk-like ceramics in dependence on their composition. The thin film grown by pulsed laser deposition has a continuous lateral composition spread allowing to determine precisely the dependence of the phonon mode properties and lattice parameters on the chemical composition. For x<0.4, we observe the single-phase b-modification. Its lattice parameters and phonon energies depend linearly on the composition. We determined the slopes of these dependencies for the individual lattice parameters and for nine Raman lines, respectively. While the lattice parameters of the ceramics follow Vegard’s rule, deviations are observed for the thin film. This deviation has only a small effect on the phonon energies, which show a reasonably good agreement between thin film and ceramics

Lattice parameters and Raman-active phonon modes of (InxGa1–x)2O3 for x < 0.4

We present X-ray diffraction and Raman spectroscopy investigations of (InxGa1–x)2O3 thin films and bulk-like ceramics in dependence of their composition. The thin films grown by pulsed laser deposition have a continuous lateral composition spread allowing the determination of phonon mode properties and lattice parameters with high sensitivity to the composition from a single 2-in. wafer. In the regime of low indium concentration, the phonon energies depend linearly on the composition and show a good agreement between both sample types. We determined the slopes of these dependencies for eight different Raman modes. While the lattice parameters of the ceramics follow Vegard’s rule, deviations are observed for the thin films. Further, we found indications of the highpressure phase InGaO3 II in the thin films above a critical indium concentration, its value depending on the type of substrate

<scp>ReSurveyEurope</scp>: A database of resurveyed vegetation plots in Europe

AbstractAimsWe introduce ReSurveyEurope — a new data source of resurveyed vegetation plots in Europe, compiled by a collaborative network of vegetation scientists. We describe the scope of this initiative, provide an overview of currently available data, governance, data contribution rules, and accessibility. In addition, we outline further steps, including potential research questions.ResultsReSurveyEurope includes resurveyed vegetation plots from all habitats. Version 1.0 of ReSurveyEurope contains 283,135 observations (i.e., individual surveys of each plot) from 79,190 plots sampled in 449 independent resurvey projects. Of these, 62,139 (78%) are permanent plots, that is, marked in situ, or located with GPS, which allow for high spatial accuracy in resurvey. The remaining 17,051 (22%) plots are from studies in which plots from the initial survey could not be exactly relocated. Four data sets, which together account for 28,470 (36%) plots, provide only presence/absence information on plant species, while the remaining 50,720 (64%) plots contain abundance information (e.g., percentage cover or cover–abundance classes such as variants of the Braun‐Blanquet scale). The oldest plots were sampled in 1911 in the Swiss Alps, while most plots were sampled between 1950 and 2020.ConclusionsReSurveyEurope is a new resource to address a wide range of research questions on fine‐scale changes in European vegetation. The initiative is devoted to an inclusive and transparent governance and data usage approach, based on slightly adapted rules of the well‐established European Vegetation Archive (EVA). ReSurveyEurope data are ready for use, and proposals for analyses of the data set can be submitted at any time to the coordinators. Still, further data contributions are highly welcome.</jats:sec

The Open-Access Journal for the Basic Principles of Diffusion Theory, Experiment and Application

IR Micro-imaging of mesoporous silicon as a model system for the investigation of hysteresis phenomen