We report on ultraviolet photodiodes with integrated optical filter based on the wurtzite (Mg,Zn)O
thin films. Tuning of the bandgap of filter and active layers was realized by employing a
continuous composition spread approach relying on the ablation of a single segmented target in
pulsed-laser deposition. Filter and active layers of the device were deposited on opposite sides of a
sapphire substrate with nearly parallel compositional gradients. Ensure that for each sample position
the bandgap of the filter layer blocking the high energy radiation is higher than that of the
active layer. Different oxygen pressures during the two depositions runs. The absorption edge is
tuned over 360 meV and the spectral bandwidth of photodiodes is typically 100 meV and as low as
50 meV
