Characterization of Metal and Metal Alloy Films as Contact Materials in MEMS Switches

This study presents a basic step toward the selection methodology of electric contact materials for microelectromechanical systems (MEMS) metal contact switches. This involves the interrelationship between two important parameters, resistivity and hardness, since they provide the guidelines and assessment of contact resistance, wear, deformation and adhesion characteristics of MEMS switches. For this purpose, thin film alloys of three noble metals, platinum (Pt), rhodium (Rh) and ruthenium (Ru) with gold (Au), were investigated. The interrelationship between resistivity and hardness was established for three levels of alloying of these metals with gold. Thin films of gold (Au), platinum (Pt), ruthenium (Rh) and rhodium (Ru) were also characterized to obtain their baseline data for comparison. All films were deposited on silicon substrates. When Ru, Rh and Pt are alloyed with Au, their hardness generally decreases but resistivity increases. This decrease or increase was, in general, dependent upon the amount of alloying

Selecting Metal Alloy Electric Contact Materials for MEMS Switches

This paper presents a method for selecting metal alloys as the electric contact materials for microelectromechanical systems (MEMS) metal contact switches. This procedure consists of reviewing macro-switch lessons learned, utilizing equilibrium binary alloy phase diagrams, obtaining thin film material properties and, based on a suitable model, predicting contact resistance performance. After determining a candidate alloy material, MEMS switches were designed, fabricated and tested to validate the alloy selection methodology. Minimum average contact resistance values of 1.17 and 1.87 Ω were measured for micro-switches with gold (Au) and gold–platinum (Au–(6.3%)Pt) alloy electric contacts, respectively. In addition, \u27hot-switched\u27 life cycle test results of 1.02 × 108 and 2.70 × 108 cycles were collected for micro-switches with Au and Au–(6.3%)Pt contacts, respectively. These results indicate increased wear with a small increase in contact resistance for MEMS switches with metal alloy electric contacts

A statistical method to optimize the chemical etching process of zinc oxide thin films

Zinc oxide (ZnO) is an attractive material for microscale and nanoscale devices. Its desirable semiconductor, piezoelectric and optical properties make it useful in applications ranging from microphones to missile warning systems to biometric sensors. This work introduces a demonstration of blending statistics and chemical etching of thin films to identify the dominant factors and interaction between factors, and develop statistically enhanced models on etch rate and selectivity of c-axis-oriented nanocrystalline ZnO thin films. Over other mineral acids, ammonium chloride (NH4Cl) solutions have commonly been used to wet etch microscale ZnO devices because of their controllable etch rate and near-linear behaviour. Etchant concentration and temperature were found to have a significant effect on etch rate. Moreover, this is the first demonstration that has identified multi-factor interactions between temperature and concentration, and between temperature and agitation. A linear model was developed relating etch rate and its variance against these significant factors and multi-factor interactions. An average selectivity of 73 : 1 was measured with none of the experimental factors having a significant effect on the selectivity. This statistical study captures the significant variance observed by other researchers. Furthermore, it enables statistically enhanced microfabrication processes for other materials

Highly Conductive ZnO Grown by Pulsed Laser Deposition in Pure Ar

Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8×10−4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions

Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica

AbstractDisorder arising from random locations of charged donors and acceptors introduces localization and diffusive motion that can lead to constructive electron interference and positive magnetoconductivity. At very low temperatures, 3D theory predicts that the magnetoconductivity is independent of temperature or material properties, as verified for many combinations of thin-films and substrates. Here, we find that this prediction is apparently violated if the film thickness d is less than about 300 nm. To investigate the origin of this apparent violation, the magnetoconductivity was measured at temperatures T = 15 – 150 K in ten, Sn-doped In2O3 films with d = 13 – 292 nm, grown by pulsed laser deposition on fused silica. We observe a very strong thickness dependence which we explain by introducing a theory that postulates a second source of disorder, namely, non-uniform interface-induced defects whose number decreases exponentially with the interface distance. This theory obeys the 3D limit for the thickest samples and yields a natural figure of merit for interface disorder. It can be applied to any degenerate semiconductor film on any semi-insulating substrate

Investigation of Plasmon Resonance Tunneling through Subwavelength Hole Arrays in Highly Doped Conductive ZnO Films

Experimental results pertaining to plasmon resonance tunneling through a highly conductive zinc oxide (ZnO) layer with subwavelength hole-arrays is investigated in the mid-infrared regime. Gallium-doped ZnO layers are pulsed-laser deposited on a silicon wafer. The ZnO has metallic optical properties with a bulk plasma frequency of 214 THz, which is equivalent to a free space wavelength of 1.4 μm. Hole arrays with different periods and hole shapes are fabricated via a standard photolithography process. Resonant mode tunneling characteristics are experimentally studied for different incident angles and compared with surface plasmontheoretical calculations and finite-difference time-domain simulations. Transmission peaks, higher than the baseline predicted by diffraction theory, are observed in each of the samples at wavelengths that correspond to the excitation of surface plasmon modes

Highly conductive ZnO grown by pulsed laser deposition in pure Ar

Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8×10−4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions

Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates

We report the first demonstration of self-aligned gate (SAG) β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) as a path toward eliminating source access resistance for low-loss power applications. The SAG process is implemented with a subtractively defined and etched refractory metal, such as Tungsten, combined with ion-implantation. We report experimental and modeled DC performance of a representative SAG device that achieved a maximum transconductance of 35 mS mm-1 and an on-resistance of ∼30 Ω mm with a 2.5 μm gate length. These results highlight the advantage of implant technology for SAG β-Ga2O3 MOSFETs enabling future power switching and RF devices with low parasitic resistance. © Not subject to copyright in the USA. Contribution of Wright-Patterson AFB