High-Q-factor Al [subscript 2]O[subscript 3] micro-trench cavities integrated with silicon nitride waveguides on silicon

We report on the design and performance of high-Q integrated optical micro-trench cavities on silicon. The microcavities are co-integrated with silicon nitride bus waveguides and fabricated using wafer-scale silicon-photonics-compatible processing steps. The amorphous aluminum oxide resonator material is deposited via sputtering in a single straightforward post-processing step. We examine the theoretical and experimental optical properties of the aluminum oxide micro-trench cavities for different bend radii, film thicknesses and near-infrared wavelengths and demonstrate experimental Q factors of > 10[superscript 6]. We propose that this high-Q micro-trench cavity design can be applied to incorporate a wide variety of novel microcavity materials, including rare-earth-doped films for microlasers, into wafer-scale silicon photonics platforms

Parallel-Coupled Adiabatic Resonant Microring (ARM) Filter with Integrated Heaters

Abstract: Add-drop filters based on parallel adiabatic resonant microrings (ARMs) are demonstrated. The ARM design permits synthesis of maximally flat characteristics up to a FWHM of 54 GHz while keeping the ripple amplitude below 1 dB

CMOS-compatible 75 mW erbium-doped distributed feedback laser

On-chip, high-power, erbium-doped distributed feedback lasers are demonstrated in a CMOS-compatible fabrication flow. The laser cavities consist of silicon nitride waveguide and grating features, defined by wafer-scale immersion lithography and an erbium-doped aluminum oxide layer deposited as the final step in the fabrication process. The large mode size lasers demonstrate single-mode continuous wave operation with a maximum output power of 75 mW without any thermal damage. The laser output power does not saturate at high pump intensities and is, therefore, capable of delivering even higher on-chip signals if a stronger pump is utilized. The amplitude noise of the laser is investigated and the laser is shown to be stable and free from self-pulsing when the pump power is sufficiently above threshold. Efficient, low noise, narrow band and stable on-chip lasers are essential for a variety of important applications, ranging from integrated analog photonics and microwave generation to coherent communications and light detection and ranging (LiDAR). Recently, two methods have shown the greatest promise for delivering high performance, integrated silicon-compatible lasers; namely, hybrid integration of silicon-on-oxide (SOI) waveguides with III-V semiconductor gain media [1-3], and erbium/ ytterbium-doped glasses on silico

1.8-μm thulium microlasers integrated on silicon

A key challenge for silicon photonic systems is the development of compact on-chip light sources. Thulium-doped fiber and waveguide lasers have recently generated interest for their highly efficient emission around 1.8 μm, a wavelength range also of growing interest to silicon-chip based systems. Here, we report on highly compact and low-threshold thulium-doped microcavity lasers integrated with silicon-compatible silicon nitride bus waveguides. The 200-μmdiameter thulium microlasers are enabled by a novel high quality-factor (Q-factor) design, which includes two silicon nitride layers and a silicon dioxide trench filled with thulium-doped aluminum oxide. Similar, passive (undoped) microcavity structures exhibit Q-factors as high as 5.7 × 10[superscript 5] at 1550 nm. We show lasing around 1.8-1.9 μm in aluminum oxide microcavities doped with 2.5 × 10[superscript 20] cm [superscript -3] thulium concentration and under resonant pumping around 1.6 μm. At optimized microcavity-waveguide gap, we observe laser thresholds as low as 773 μW and slope efficiencies as high as 23.5%. The entire fabrication process, including back-end deposition of the gain medium, is silicon-compatible and allows for co-integration with other silicon-based photonic devices for applications such as communications and sensing.United States. Defense Advanced Research Projects Agency. Microsystems Technology Office (HR0011-15-C-0056)United States. Defense Advanced Research Projects Agency. Microsystems Technology Office (HR0011-12-2-0007)Singapore. Agency for Science, Technology and Researc

A full degree-of-freedom photonic crystal spatial light modulator

Harnessing the full complexity of optical fields requires complete control of all degrees-of-freedom within a region of space and time -- an open goal for present-day spatial light modulators (SLMs), active metasurfaces, and optical phased arrays. Here, we solve this challenge with a programmable photonic crystal cavity array enabled by four key advances: (i) near-unity vertical coupling to high-finesse microcavities through inverse design, (ii) scalable fabrication by optimized, 300 mm full-wafer processing, (iii) picometer-precision resonance alignment using automated, closed-loop "holographic trimming", and (iv) out-of-plane cavity control via a high-speed micro-LED array. Combining each, we demonstrate near-complete spatiotemporal control of a 64-resonator, two-dimensional SLM with nanosecond- and femtojoule-order switching. Simultaneously operating wavelength-scale modes near the space- and time-bandwidth limits, this work opens a new regime of programmability at the fundamental limits of multimode optical control.Comment: 25 pages, 20 figure

A full degree-of-freedom spatiotemporal light modulator

Harnessing the full complexity of optical fields requires complete control of all degrees-of-freedom within a region of space and time — an open goal for present-day spatial light modulators (SLMs), active metasurfaces, and optical phased arrays. Here, we solve this challenge with a programmable photonic crystal cavity array enabled by four key advances: (i) near-unity vertical coupling to high-finesse microcavities through inverse design, (ii) scalable fabrication by optimized, 300 mm full-wafer processing, (iii) picometer-precision resonance alignment using automated, closed-loop “holographic trimming”, and (iv) out-of-plane cavity control via a high-speed µLED array. Combining each, we demonstrate near-complete spatiotemporal control of a 64-resonator, two-dimensional SLM with nanosecond- and femtojoule-order switching. Simultaneously operating wavelength-scale modes near the space- and time-bandwidth limits, this work opens a new regime of programmability at the fundamental limits of multimode optical control

High-temperature fracturing and subsequent grain-size-sensitive creep in lower crustal gabbros:Evidence for coseismic loading followed by creep during decaying stress in the lower crust?

The mechanism of shear zone formation in lower crustal, relatively “dry” rocks is still poorly understood. We have studied the high-temperature deformation of the Hasvik gabbro (northern Norway) which commences by fracturing. The 10–20 μm wide fractures show little displacement. The fine-grained plagioclase and orthopyroxene in the fractures lack a crystallographic preferred orientation (CPO) or a systematic crystallographic orientation with respect to the host grains. Fractures grade into narrow shear zones, which are composed of fine (10–20 μm), equant grains of recrystallized plagioclase, amphibole, and pyroxene. Recrystallized plagioclase and pyroxene have compositions different from the magmatic grains, suggesting that they have formed by nucleation and growth. Based on conventional plagioclase-amphibole thermobarometry, the shear zones have formed at temperatures and pressures of 700–750°C and 0.5–0.6 GPa. The observed primary minerals cut by fractures suggest high-temperature fracturing in the absence of high pore pressures, which implies a high strength of the lower crustal gabbros and high stresses at fracturing. The shear zones are characterized by the lack of CPO and a small grain size, suggesting that the mechanism of deformation of the fine-grained plagioclase and orthopyroxene has been grain boundary sliding accommodated by diffusive mass transfer. The amphibole grains have strong CPOs, which most likely result from oriented growth and/or rigid body rotations during deformation. The process that initiated the fracturing and subsequent viscous creep in the Hasvik gabbro may have resulted from a process of coseismic loading followed by creep during decaying stress in the lower crust