Fabrication of amorphous silicon nanoribbons by atomic force microscope tip induced local oxidation for thin film device applications

WOSInternational audienceWe demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as mask for the elaboration of thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as mask during plasma etching of the amorphous layer leading to the formation of nanoribbon. Such amorphous silicon nanoribbon is used for the fabrication of resistor

La cosmologie iranienne comme matrice dialectique du monde occidental

Puisque nous n'avons pu trouver un fondement logique à la dialectique, nous avons alors compris que la dialectique était historique. Il ne restait plus alors qu'à trouver la culture d'origine que nous avons localisée en Perse. Since we could not find a logical foundation for the dialectic, we then understood that the dialectic was historical. All that remained was to find the culture of origin, which we located in Persia

Le Concept d Entéléchie chez Aristote. Origine, Modélisation et Prolongement

ARISTOTE contre LEIBNITZ : En quoi le concept d'Entéléchie aristotélicien est-il totalement opposé au concept d'Harmonie platonicien et leibnitzien

Contribution of point sources to the soft gamma-ray Galactic emission

The nature of the soft gamma-ray (20-200 keV) Galactic emission has been a matter of debate for a long time. Previous experiments have tried to separate the point source contribution from the real interstellar emission, but with a rather poor spatial resolution, they concluded that the interstellar emission could be a large fraction of the total Galactic emission. INTEGRAL, having both high resolution and high sensitivity, is well suited to reassess more precisely this problem. Using the INTEGRAL core program Galactic Center Deep Exposure (GCDE), we estimate the contribution of detected point sources to the total Galactic flux.Comment: Proceedings of the 5th INTEGRAL Workshop, Munich 16-20 February 2004. ESA SP-55

Silicon nanowires synthesis for chemical sensor applications

WOSInternational audienceSilicon nanowires (SiNWs) are synthesized following two methods: i) the VLS (Vapor-Liquid-Solid) growth technique (bottom up approach), and ii) the sidewall spacer fabrication (top down approach) commonly used in microelectronic industry. The VLS growth technique uses gold nanoparticles to activate the vapor deposition of the precursor gas and initiate a 100 nm diameter SiNWs network growth. In the case of the sidewall spacer method, a polysilicon layer is deposited by LPCVD (Low Pressure Chemical Vapor Deposition) technique on SiO2 wall patterned by conventional UV lithography technique. Polysilicon film is then plasma etched. Accurate control of the etching rate leads to the formation of spacers with a 100 nm curvature radius that can be used as polysilicon NWs. Each kind of nanowires is integrated into resistors fabrication. Electrical measurements show the potential usefulness of these SiNWs as chemical sensors

Influence of Aluminum Laser Ablation on Interfacial Thermal Transfer and Joint Quality of Laser Welded Aluminum–Polyamide Assemblies

Laser assisted metal–polymer joining (LAMP) is a novel assembly process for the development of hybrid lightweight products with customized properties. It was already demonstrated that laser ablation of aluminum alloy Al1050 (Al) prior to joining with polyamide 6.6 (PA) has significant influence on the joint quality, manifested in the joint area. However, profound understanding of the factors affecting the joint quality was missing. This work investigates the effects of laser ablation on the surface properties of Al, discusses their corresponding impact on the interfacial thermal transfer between the joining partners, and evaluates their effects on the joint quality. Samples ablated with different parameters, resulting in a range from low- to high-quality joints, were selected, and their surface properties were analyzed by using 2D profilometry, X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), and energy-dispersive X-ray spectroscopy (EDX). In order to analyze the effects of laser ablation parameters on the interfacial thermal transfer between metal and polymer, a model two-layered system was analyzed, using laser flash analysis (LFA), and the thermal contact resistance (TCR) was quantified. Results indicate a strong influence of laser-ablation parameters on the surface structural and morphological properties, influencing the thermal transfer during the laser welding process, thus affecting the joint quality and its resistance to shear load

VLBA determination of the distance to nearby star-forming regions I. The distance to T Tauri with 0.4% accuracy

In this article, we present the results of a series of twelve 3.6-cm radio continuum observations of T Tau Sb, one of the companions of the famous young stellar object T Tauri. The data were collected roughly every two months between September 2003 and July 2005 with the Very Long Baseline Array (VLBA). Thanks to the remarkably accurate astrometry delivered by the VLBA, the absolute position of T Tau Sb could be measured with a precision typically better than about 100 micro-arcseconds at each of the twelve observed epochs. The trajectory of T Tau Sb on the plane of the sky could, therefore, be traced very precisely, and modeled as the superposition of the trigonometric parallax of the source and an accelerated proper motion. The best fit yields a distance to T Tau Sb of 147.6 +/- 0.6 pc. The observed positions of T Tau Sb are in good agreement with recent infrared measurements, but seem to favor a somewhat longer orbital period than that recently reported by Duchene et al. (2006) for the T Tau Sa/T Tau Sb system.Comment: 24 pages, 3 pages, AASTEX format, accepted for publication in Ap

Growth-in-place deployment of in-plane silicon nanowires

International audienceUp-scaling silicon nanowire (SiNW)-based functionalities requires a reliable strategy to precisely position and integrate individual nanowires. We here propose an all-in-situ approach to fabricate self-positioned/aligned SiNW, via an in-plane solid-liquid-solid growth mode. Prototype field effect transistors, fabricated out of in-plane SiNWs using a simple bottom-gate configuration, demonstrate a hole mobility of 228 cm2/V s and on/off ratio >103. Further insight into the intrinsic doping and structural properties of these structures was obtained by laser-assisted 3 dimensional atom probe tomography and high resolution transmission electron microscopy characterizations. The results could provide a solid basis to deploy the SiNW functionalities in a cost-effective way

Multinuclear NMR as a tool for studying local order and dynamics in CH3NH3PbX3 (X = Cl, Br, I) hybrid perovskites

International audienceWe report on Pb, Br, N, H, C and H NMR experiments for studying the local order and dynamics in hybrid perovskite lattices. Pb NMR experiments conducted at room temperature on a series of MAPbX compounds (MA = CHNH; X = Cl, Br and I) showed that the isotropic Pb NMR shift is strongly dependent on the nature of the halogen ions. Therefore Pb NMR appears to be a very promising tool for the characterisation of local order in mixed halogen hybrid perovskites. Pb NMR on MAPbBrI served as a proof of concept. Proton, C and N NMR experiments confirmed the results previously reported in the literature. Low temperature deuterium NMR measurements, down to 25 K, were carried out to investigate the structural phase transitions of MAPbBr. Spectral lineshapes allow following the successive phase transitions of MAPbBr. Finally, quadrupolar NMR lineshapes recorded in the orthorhombic phase were compared with simulated spectra, using DFT calculated electric field gradients (EFG). Computed data do not take into account any temperature effect. Thus, the discrepancy between the calculated and experimental EFG evidences the fact that MA cations are still subject to significant dynamics, even at 25 K