Solving heterogeneous-agent models with parameterized cross-sectional distributions

A new algorithm is developed to solve models with heterogeneous agents and aggregate uncertainty. Projection methods are the main building blocks of the algorithm and – in contrast to the most popular solution procedure – simulations only play a very minor role. The paper also develops a new simulation procedure that not only avoids cross-sectional sampling variation but is 10 (66) times faster than simulating an economy with 10,000 (100,000) agents. Because it avoids cross-sectional sampling variation, it can generate an accurate representation of the whole cross-sectional distribution. Finally, the paper outlines a set of accuracy tests

Conductive-probe atomic force microscopy characterization of silicon nanowire

The electrical conduction properties of lateral and vertical silicon nanowires (SiNWs) were investigated using a conductive-probe atomic force microscopy (AFM). Horizontal SiNWs, which were synthesized by the in-plane solid-liquid-solid technique, are randomly deployed into an undoped hydrogenated amorphous silicon layer. Local current mapping shows that the wires have internal microstructures. The local current-voltage measurements on these horizontal wires reveal a power law behavior indicating several transport regimes based on space-charge limited conduction which can be assisted by traps in the high-bias regime (> 1 V). Vertical phosphorus-doped SiNWs were grown by chemical vapor deposition using a gold catalyst-driving vapor-liquid-solid process on higly n-type silicon substrates. The effect of phosphorus doping on the local contact resistance between the AFM tip and the SiNW was put in evidence, and the SiNWs resistivity was estimated

Growth of a 3C-SiC layer by carburization of silicon nanopillars

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Silicon carbide based one-dimensional nanostructure growth: towards electronics and biology perspectives

International audienceOne-dimensional (1D) nanostructures such as nanowires or nanotubes have attracted great interest in fundamental research as well as potential breakthrough applications. Among many materials, silicon carbide (SiC) has very interesting physical, chemical and electronic properties. This is why silicon carbide based 1D nanostructures, which combine excellent intrinsic properties with low dimensionality, have great potential. In this topical review, the growth of SiC 1D nanostructures is addressed as well as the potential applications of these peculiar nano-objects. This subject is first introduced by the interest in this material and by a summing up of the state of the art of SiC nanowire growth. In the second part, Si–SiC core–shell nanowire synthesis is described, followed by the growth of SiC nanotubes. In particular, these two kinds of nanostructures can be obtained via Si nanowire carburization. The third part is dedicated to the control of the synthesis from Si–SiC core–shell nanowires to SiC nanotubes using this original technique. Then, an alternative top-down approach to synthesize SiC 1D nanostructures is described. Finally, preliminary results towards integration for biology, energy and electronics are provided