En granskning av självmordsrapportering i svensk dagspress

En granskning av självmordsrapportering i svensk dagspress

Silver-spoon upbringing improves early-life fitness but promotes reproductive ageing in a wild bird

Early-life conditions can have long-lasting effects and organisms that experience a poor start in life are often expected to age at a faster rate. Alternatively, individuals raised in high-quality environments can overinvest in early-reproduction resulting in rapid ageing. Here we use a long-term experimental manipulation of early-life conditions in a natural population of collared flycatchers (Ficedula albicollis), to show that females raised in a low-competition environment (artificially reduced broods) have higher early-life reproduction but lower late-life reproduction than females raised in high-competition environment (artificially increased broods). Reproductive success of high-competition females peaked in late-life, when low-competition females were already in steep reproductive decline and suffered from a higher mortality rate. Our results demonstrate that ‘silver-spoon’ natal conditions increase female early-life performance at the cost of faster reproductive ageing and increased late-life mortality. These findings demonstrate experimentally that natal environment shapes individual variation in reproductive and actuarial ageing in nature

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

We present temperature dependent electrical measurements on n-type InAs/InSb nanowireheterostructurefield-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling is more pronounced when the large voltage drop occurs in the narrow bandgapInSb segment. For small negative gate-voltages, the InSb segment can be tuned toward p-type conduction, which induces a strong band-to-band tunneling across the heterostructucture junction.This work was carried out within the Nanometer Structure Consortium at Lund University and was supported by the Swedish Research Council (VR), the Swedish Foundation for Strategic Research (SSF), and the Knut and Alice Wallenberg Foundation

Temperature dependent properties of InSb and InAs nanowire field-effect transistors

We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.This work was carried out within the Nanometer Structure Consortium at Lund University and was supported by the Swedish Research Council VR, the Swedish Foundation for Strategic Research SSF, the European Community EU Contract No. 015783 NODE, and the Knut and Alice Wallenberg Foundation