Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Abstract

We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.This work was carried out within the Nanometer Structure Consortium at Lund University and was supported by the Swedish Research Council VR, the Swedish Foundation for Strategic Research SSF, the European Community EU Contract No. 015783 NODE, and the Knut and Alice Wallenberg Foundation