Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature

Two GaAs mesa p+-i-n+ photodiodes intended for photon counting X-ray spectroscopy, having an i layer thickness of 7 μm and diameter of 200 μm, have been characterized electrically, for their responsivity at the wavelength range 580 nm to 980 nm and one of them for its performance at detection of soft X-rays, at room temperature. Dark current and capacitance measurements as a function of applied forward and reverse bias are presented. The results show low leakage current densities, in the range of nA/cm2 at the maximum internal electric field (22 kV/cm). The unintentional doping concentration of the i layer, calculated from capacitance measurements, was found to be <1014 cm−3. Photocurrent measurements were performed under visible and near infrared light illumination for both diodes. The analysis of these measurements suggests the presence of a non-active (dead) layer (0.16 μm thickness) at the p+ side top contact interface, where the photogenerated carriers do not contribute to the photocurrent, possibly due to recombination. One of the diodes, D1, was also characterized as detector for room temperature photon counting X-ray spectroscopy; the best energy resolution achieved (FWHM) at 5.9 keV was 745 eV. The noise analysis of the system, based on spectra obtained at different shaping times and applied reverse biases, showed that the dominant source of noise is the dielectric noise. It was also calculated that there was at least (165±24) eV charge trapping noise at 0 V

Prototype GaAs X‐ray detector and preamplifier electronics for a deep seabed mineral XRF spectrometer

Work towards developing a prototype GaAs based X-ray fluorescence spectrometer focusing on the detector-preamplifier system for in situ characterisation of deep seabed minerals is presented. Such an instrument could be useful for marine geology and provide insight into hydrothermal processes. It would also be beneficial for deep sea mining applications. The GaAs photodiode was electrically characterised at 4 °C (ambient seawater temperature) and 33 °C. A system energy resolution (full width at half maximum) at 5.9 keV of 580 eV at 4°C, limited by the dielectric noise, broadening to 680 eV at 33°C, was recorded. The spectral performance of the system was characterised across the energy range 4.95 keV to 21.17 keV, at 33°C, using high-purity X-ray fluorescence calibration samples excited by a Mo target X-ray tube. The charge output from the system was found to be linear with incident photon energy. The energy resolution was found to broaden from 695 eV at 4.95 keV to 735 eV at 21.17 keV, attributed to the increasing Fano noise with energy. The same X-ray tube was used to fluoresce an unprepared manganese nodule (revealing the presence of Mn, Fe, Ni, Cu, Zn, Pb, Sr, and Mo) and a black smoker hydrothermal vent sample (containing Fe, Co, Ni, Cu, Zn, Pb, and Mo). Such a spectrometer may also find use in future space missions to study the hydrothermal vents that are believed to exist in the oceans of Jupiter's moon Europa

GaAs spectrometer for planetary electron spectroscopy

Work towards producing a radiation-hard and high temperature tolerant direct detection electron spectrometer is reported. The motivation is to develop a low-mass, low-volume, low-power, multi-mission capable instrument for future space science missions. The resultant prototype electron spectrometer employed a GaAs p+-i-n+ mesa photodiode (10 µm i layer thickness; β00 μm diameter) and a custom-made charge-sensitive preamplifier. The GaAs detector was initially electrically characterized as a function of temperature. The detector-preamplifier assembly was then investigated for its utility in electron spectroscopy across the temperature range 100 °C to 20 °C using a laboratory 63Ni radioisotope - particle source (end point energy = 66 keV). Monte Carlo simulations using the computer program CASINO were conducted and showed that the spectrometer had a quantum detection efficiency which increased with increasing electron energy up to 70 keV; a quantum detection efficiency of 73 % was calculated. The accumulated 63Ni - particle spectra together with CASINO simulations of the detected spectra showed that the GaAs based spectrometer could be used for counting electrons and measuring the energy deposited per electron in the detector’s active region (i layer). The development of a GaAs electron spectrometer of this type may find use in future space missions to environments of intense radiation (such as at the surface of Europa for investigation of electron-driven radiolysis of ice) and high temperature (such as at Mercury, and comets passing close to the Sun)

30 μm thick GaAs X-ray p+-i-n+ photodiode grown by MBE

A GaAs p+-i-n+ photodiode detector with a 30 μm thick i layer and a 400 μm diameter was processed using standard wet chemical etching from material grown by molecular beam epitaxy. The detector was characterized for its electrical and photon counting X-ray spectroscopic performance at temperatures from 60°C to -20 °C. The leakage current of the detector decreased from 1.247 nA ± 0.005 nA (= 0.992 μA/cm2 ± 0.004 μA/cm2) at 60 °C to 16.0 pA ± 0.5 pA (= 12.8 nA/cm2 ± 0.4 nA/cm2) at -20 °C, at the maximum investigated applied reverse bias, -100 V (corresponding to an applied electric field of 33 kV/cm). An almost uniform effective carrier concentration of 7.1 × 1014 cm-3 ± 0.7 × 1014 cm-3 was found at distances between 1.7 μm and 14 μm below the p+-i junction, which limited the depletion width to 14 μm ± 1 μm, at the maximum applied reverse bias (-100 V). Despite butterfly defects having formed during the epitaxial growth, 55 Fe X-ray spectra were successfully obtained with the detector coupled to a custom-made charge-sensitive preamplifier; the best energy resolution (Full Width at Half Maximum at 5.9 keV) improved from 1.36 keV at 60 °C to 0.73 keV at -20 °C. Neither the leakage current nor the capacitance of the GaAs detector were found to be the limiting factors of the energy resolution of the spectroscopic system; noise analysis at 0 °C and -20 °C revealed that the dominant source of noise was the quadratic sum of the dielectric and incomplete charge collection noise