Measuring thermal conductivity of nanostructures with the 3ω method: the need for finite element modeling

Conventional techniques of measuring thermal transport properties may be unreliable or unwieldy when applied to nanostructures. However, a simple, all-electrical technique is available for all samples featuring high-aspect-ratio: the 3? method. Nonetheless, its usual formulation relies on simple analytical results which may break down in real experimental conditions. In this work we clarify these limits and quantify them via adimensional numbers and present a more accurate, numerical solution to the 3? problem based on the Finite Element Method (FEM). Finally, we present a comparison of the two methods on experimental datasets from InAsSb nanostructures with different thermal transport properties, to stress the crucial need of a FEM counterpart to 3? measurements in nanostructures with low thermal conductivity

Second-harmonic generation in silicon waveguides strained by silicon nitride

Silicon photonics meets the electronics requirement of increased speed and bandwidth with on-chip optical networks. All-optical data management requires nonlinear silicon photonics. In silicon only third-order optical nonlinearities are present owing to its crystalline inversion symmetry. Introducing a second-order nonlinearity into silicon photonics by proper material engineering would be highly desirable. It would enable devices for wideband wavelength conversion operating at relatively low optical powers. Here we show that a sizeable second-order nonlinearity at optical wavelengths is induced in a silicon waveguide by using a stressing silicon nitride overlayer. We carried out second-harmonic-generation experiments and first-principle calculations, which both yield large values of strain-induced bulk second-order nonlinear susceptibility, up to 40pm/V at 2.300 nm. We envisage that nonlinear strained silicon could provide a competing platform for a new class of integrated light sources spanning the near- to mid-infrared spectrum from 1.2 to 10 micron

Role of interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2

Light emitting silicon nanocrystals embedded in SiO2 have been investigated by x-ray absorption measurements in total electron and photoluminescence yields, by energy filtered TEM analysis and by ab-initio total energy calculations. Both experimental and theoretical results show that the interface between the silicon nanocrystals and the surrounding SiO2 is not sharp: an intermediate region of amorphous nature and of variable composition links the crystalline Si with the amorphous stoichiometric SiO2. This region plays an active role in the light emission process

Optical properties of structurally-relaxed Si/SiO2_2 superlattices: the role of bonding at interfaces

We have constructed microscopic, structurally-relaxed atomistic models of Si/SiO$_2$ superlattices. The structural distortion and oxidation-state characteristics of the interface Si atoms are examined in detail. The role played by the interface Si suboxides in raising the band gap and producing dispersionless energy bands is established. The suboxide atoms are shown to generate an abrupt interface layer about 1.60 \AA thick. Bandstructure and optical-absorption calculations at the Fermi Golden rule level are used to demonstrate that increasing confinement leads to (a) direct bandgaps (b) a blue shift in the spectrum, and (c) an enhancement of the absorption intensity in the threshold-energy region. Some aspects of this behaviour appear not only in the symmetry direction associated with the superlattice axis, but also in the orthogonal plane directions. We conclude that, in contrast to Si/Ge, Si/SiO$_2$ superlattices show clear optical enhancement and a shift of the optical spectrum into the region useful for many opto-electronic applications.Comment: 11 pages, 10 figures (submitted to Phys. Rev. B

Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results

Actually, most of the electric energy is being produced by fossil fuels and great is the search for viable alternatives. The most appealing and promising technology is photovoltaics. It will become truly mainstream when its cost will be comparable to other energy sources. One way is to significantly enhance device efficiencies, for example by increasing the number of band gaps in multijunction solar cells or by favoring charge separation in the devices. This can be done by using cells based on nanostructured semiconductors. In this paper, we will present ab-initio results of the structural, electronic and optical properties of (1) silicon and germanium nanoparticles embedded in wide band gap materials and (2) mixed silicon-germanium nanowires. We show that theory can help in understanding the microscopic processes important for devices performances. In particular, we calculated for embedded Si and Ge nanoparticles the dependence of the absorption threshold on size and oxidation, the role of crystallinity and, in some cases, the recombination rates, and we demonstrated that in the case of mixed nanowires, those with a clear interface between Si and Ge show not only a reduced quantum confinement effect but display also a natural geometrical separation between electron and hole

Ab initio nonlinear optics in solids: linear electro-optic effect and electric-field induced second-harmonic generation

Second-harmonic generation (SHG), linear electro-optic effect (LEO) and electric-field induced second-harmonic generation (EFISH) are nonlinear optical processes with important applications in optoelectronics and photovoltaics. SHG and LEO are second-order nonlinear optical processes described by second-order susceptibility. Instead, EFISH is a third-order nonlinear optical process described by third-order susceptibility. LEO and EFISH are only observed in the presence of a static electric field. These nonlinear processes are very sensitive to the symmetry of the systems. In particular, LEO is usually observed through a change in the dielectric properties of the material while EFISH can be used to generate a "second harmonic" response in centrosymmetric material. In this work, we present a first-principle formalism to calculate second- and third-order susceptibility for LEO and EFISH. LEO is studied for GaAs semiconductor and compared with the dielectric properties of this material. We also present how it is possible for LEO to include the ionic contribution to the second-order macroscopic susceptibility. Concerning EFISH we present for the first time the theory we developed in the framework of TDDFT to calculate this nonlinear optical process. Our approach permits to obtain an expression for EFISH which does not contain the mathematical divergences in the frequency-dependent second-order susceptibility that caused until now many difficulties for numerical calculations

Optical absorption spectra of doped and codoped Si nanocrystallites

The effects of the incorporation of group-III (B and Al), group-IV (C and Ge), and group-V (N and P) impurities on the formation energies, electronic density of states, optical absorption spectra, and radiative lifetimes of Si nanocrystallites of different shape and with diameters up to 2 nm are studied by means of an ab initio pseudopotential method that takes into account spin polarization. The single doping with group-III or group-V impurities leads to significant changes on the onsets of the absorption spectra that are related to the minority-spin states. In contrast to the optical absorption spectra, the radiative lifetimes are sensitively influenced by the shape of the nanocrystallites, though this influence tends to disappear as the size of the nanocrystallites increase. Codoping is investigated for pairs of group-III and group-V impurities. We show that the impurity formation energies decrease significantly when the nanocrystallites are codoped with B and P or with Al and P. Additional peaks are introduced in the absorption spectra due to codoping, giving rise to a redshift of the absorption onset with respect to the undoped nanocrystallites. Those additional peaks are more intense when codoping is performed with two different species either of the group III or of the group V. The values of radiative lifetimes for the codoped nanocrystallites are mostly in between the values for the nanocrystallites doped with the impurities separately

Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites

We investigate the incorporation of group-III ( B and Al), group-IV ( C and Ge), and group-V ( N and P) impurities in Si nanocrystallites. The structural features and electronic properties of doped Si nanocrystallites, which are faceted or spherical-like, are studied by means of an ab initio pseudopotential method including spin polarization. Jahn-Teller distortions occur in the neighborhood of the impurity sites and the bond lengths show a dependence on size and shape of the nanocrystallites. We find that the acceptor ( group-III) and donor ( group-V) levels become deep as the nanocrystallites become small. The energy difference between the spin-up and spin-down levels of group-III and group-V impurities decreases as the size of the Si nanocrystallite increases and tends to the value calculated for Si bulk. Doping with carbon introduces an impurity-related level in the energy gap of the Si nanocrystallites