Electron and trap dynamics in As-ion-implanted and annealed GaAs

The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump–probe measurements.Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.This work was supported in part by the EC INCOCOPERNICUS project ‘‘DUO—devices for ultrafast optoelectronics’’ and the Lithuanian Science and Study Foundation

Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents

Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical pulses were used to determine the electron energy band offsets between different constituent materials. It has been shown that when the photon energy is sufficient enough to excite electrons in the narrower bandgap layer with an energy greater than the conduction band offset, the terahertz pulse changes its polarity. Theoretical analysis performed both analytically and by numerical Monte Carlo simulation has shown that the polarity inversion is caused by the electrons that are excited in the narrow bandgap layer with energies sufficient to surmount the band offset with the wide bandgap substrate. This effect is used to evaluate the energy band offsets in GaInAs/InP and GaInAsBi/InP heterostructures

Characterizing temporary hydrological regimes at a European scale

Monthly duration curves have been constructed from climate data across Europe to help address the relative frequency of ecologically critical low flow stages in temporary rivers, when flow persists only in disconnected pools in the river bed. The hydrological model is 5 based on a partitioning of precipitation to estimate water available for evapotranspiration and plant growth and for residual runoff. The duration curve for monthly flows has then been analysed to give an estimate of bankfull flow based on recurrence interval. The corresponding frequency for pools is then based on the ratio of bank full discharge to pool flow, arguing from observed ratios of cross-sectional areas at flood 10 and low flows to estimate pool flow as 0.1% of bankfull flow, and so estimate the frequency of the pool conditions that constrain survival of river-dwelling arthropods and fish. The methodology has been applied across Europe at 15 km resolution, and can equally be applied under future climatic scenarios

Low temperature MBE grown GaAs for terahertz radiation applications

Attempts to optimize recombination characteristics of LTG GaAs layers for their use in terahertz (THz) radiation devices were performed. Femtosecond laser based transient reflectivity and optical pump – THz or mid-IR probe techniques were employed for the electron and, respectively, hole trapping time determination. THz range devices manufactured from LTG GaAs layers grown and annealed at different temperatures were investigated

Optical Nonlinearities in PbSe Nanocrystals

The linear and nonlinear optical response of colloidal PbSe nanocrystals was investigated. Optical nonlinearity and its recovery dynamics in this system was measured and compared with other available experimental data. The saturation irradiance value for the bleaching effect and absorption cross-section were determined