Attempts to optimize recombination
characteristics of LTG GaAs layers for their use in
terahertz (THz) radiation devices were performed.
Femtosecond laser based transient reflectivity and
optical pump – THz or mid-IR probe techniques were
employed for the electron and, respectively, hole
trapping time determination. THz range devices
manufactured from LTG GaAs layers grown and
annealed at different temperatures were investigated
