Precision Synthesis of Silicon Nanowires with Crystalline Core and Amorphous Shell

A synthetic route to crystalline silicon (Si) nanowires with an amorphous Si shell is reported. Trisilane (Si3H8) and Sn(HMDS)(2) are decomposed in supercritical toluene at 450 degrees C. Sn(HMDS)(2) creates Sn nanoparticles that seed Si nanowire growth by the supercritical fluid-liquid-solid (SFLS) mechanism. The Si : Sn ratio in the reaction determines the growth of amorphous Si shell. No amorphous shell forms at relatively low Si : Sn ratios of 20 : 1, whereas higher Si : Sn ratio of 40 : 1 leads to significant amorphous shell. We propose that hydrogen evolved from trisilane decomposition etches away the Sn seed particles as nanowires grow, which promotes the amorphous Si shell deposition when the higher Si : Sn ratios are used.Robert A. Welch Foundation F-1464U.S. Department of Energy Office of Science, Office of Basic Energy Sciences DE-SC0001091National Defense Science and Engineering Graduate FellowshipChemistr

Brian A. Korgel, professor d'Enginyeria Química a la Universitat de Texas

Durant el mes de juny, la Facultat de Ciències de la UAB ha acollit la primera edició del Nanotechnology Innovation, un curs que ha fusionat conceptes clau en nanotecnologia amb principis d'innovació, creativitat, creació de negoci, emprenedoria, propietat intel·lectual i en general, de l'entorn econòmic global. El programa ha estat organitzat conjuntament per la Universitat Autònoma de Barcelona i la Universitat de Texas, amb la col·laboració del Barcelona Nanotechnology Cluster Bellatera. El professor Brian A.Korgel de la Universitat de Texas i la Dra Gemma Garcia del departament de física i coordinadora adjunta del grau de nanociència i nanotecnologia han estat els encarregats de conduir el programa

Colloidal Silicon-Germanium Nanorod Heterostructures

Colloidal nanorods with axial Si and Ge heterojunction segments were produced by solution-liquid-solid (SLS) growth using Sn as a seed metal and trisilane and diphenylgermane as Si and Ge reactants. The low solubility of Si and Ge in Sn helps to generate abrupt Si-Ge heterojunction interfaces. To control the composition of the nanorods, it was also necessary to limit an undesired side reaction between the Ge reaction byproduct tetraphenylgermane and trisilane. High-resolution transmission electron microscopy reveals that the Si-Ge interfaces are epitaxial, which gives rise to a significant amount of bond strain resulting in interfacial misfit dislocations that nucleate stacking faults in the nanorods

A Model for Isotropic Crystal Growth from Vapor on a Patterned Substrate

We developed a consistent mathematical model for isotropic crystal growth on a substrate covered by the mask material with a periodic series of parallel long trenches where the substrate is exposed to the vapor phase. Surface diffusion and the flux of particles from vapor are assumed to be the main mechanisms of growth. A geometrical approach to the motion of crystal surface in two dimensions is adopted and nonlinear evolution equations are solved by a finite-difference method. The model allows the direct computation of the crystal surface shape, as well as the study of the effects due to mask regions of effectively nonzero thickness. As in experiments, lateral overgrowth of crystal onto the mask and enhanced growth in the region near the contact of the crystal and the mask is found, as well as the comparable crystal shapes. The growth rates in vertical and lateral directions are investigated.Comment: 21 pages; submitted to the Journal of Crystal Growt

Silicon nanoparticles as Raman scattering enhancers

[EN] In this communication we demonstrate the large amplification values of the Raman signal of organic molecules attached to silicon nanoparticles (SiNPs). Light induced Mie resonances of high refractive index particles generate strong evanescent electromagnetic (EM) fields, thus boosting the Raman signal of species attached to the nanoparticles. The interest of this process is justified by the wide range of experimental configurations that can be implemented including photonic crystals, the sharp spectral resonances easily tuneable with the particle size, the biocompatibility and biodegradability of silicon, and the possibility of direct analysis of molecules that do not contain functional groups with high affinity for gold and silver. Additionally, silicon nanoparticles present stronger field enhancement due to Mie resonances at larger sizes than gold.The authors acknowledge financial support from the following projects FIS2009-07812, MAT2012-35040, Consolider 2007-0046 Nano light, PROMETEO/2010/043, CTQ2011-23167, and Cross-SEAS, FP7 MC-IEF 329131. L. S. thanks the financial support from the MINECO (Estancias de profesores e investigadores extranjeros en centros espanoles) fellowship program.Rodríguez, M.; Shi, L.; Lu, X.; Korgel, B.; Alvarez -Puebla, R.; Meseguer Rico, FJ. (2014). Silicon nanoparticles as Raman scattering enhancers. Nanoscale. 6(11):5666-5670. https://doi.org/10.1039/c4nr00593gS5666567061

Enhanced Open-Circuit Voltage of Wide-Bandgap Perovskite Photovoltaics by Using Alloyed (FA1–xCsx)Pb(I1–xBrx)3 Quantum Dots

We report a detailed study on APbX3 (A=Formamidinium (FA+), Cs+; X=I-, Br-) perovskite quantum dots (PQDs) with combined A- and X-site alloying that exhibit, both, a wide bandgap and high open circuit voltage (Voc) for the application of a potential top cell in tandem junction photovoltaic (PV) devices. The nanocrystal alloying affords control over the optical bandgap and is readily achieved by solution-phase cation and anion exchange between previously synthesized FAPbI3 and CsPbBr3 PQDs. Increasing only the Br- content of the PQDs widens the bandgap but results in shorter carrier lifetimes and associated Voc losses in devices. These deleterious effects can be mitigated by replacing Cs+ with FA+, resulting in wide bandgap PQD absorbers with improved charge-carrier mobility and PVs with higher Voc. Although further device optimization is required, these results demonstrate the potential of FA1–xCsx)Pb(I1–xBrx)3 PQDs for wide bandgap perovskite PVs with high Voc

Compositional fluctuations mediated by excess of tellurium in bismuth antimony telluride nanocomposite yields high thermoelectric performance

A high thermoelectric figure of merit (ZT) in state-of-the-art bismuth antimony telluride (BST) composites was attained by an excess tellurium-assisted liquid-phase compaction approach. Herein, we report a maximum ZT of approximate to 1.4 at 500 K attained for BST bulk nanocomposites fabricated by spark plasma sintering of colloidally synthesized (Bi,Sb)(2)Te-3 platelets and Te-rich rods. The Terich nanodomains and antimony precipitation during sintering result in compositional fluctuations and atomic ordering within the BST-Te eutectic microstructure, which provides additional phonon scattering and hole contributions. The electrical transport measurement and theoretical calculations corroborate the altered free carrier density via lattice defects and atomic ordering under Te-rich conditions, resulting in a higher power factor. Microstructural studies suggest that reduction in lattice thermal conductivity is due to composite interfaces and defects in the closely packed (Bi,Sb)(2)Te-3 matrix with unevenly distributed Sband Te-rich nanodomains. This work provides an unconventional chemical synthesis route with large scalability for developing high-performance chalcogenide-based bulk nanocomposites for thermoelectric applications.- We thank the members of the Nanochemistry Research Group (http://nanochemgroup.org) at INL for insightful discussions and support. This work was supported by the Portuguese national funding agency for science, research, and technology (FCT) under the UT-BORN-PT project (UTAP-EXPL/CTE/0050/2017), strategic project UID/FIS/04650/2020, Project SATRAP (POCI-01-0145-FEDER-028108) and Advanced Computing Project CPCA/A2/4513/2020 for access to MACC-BOB HPC resources. B.A.K. acknowledges funding of this work by the Robert A. Welch Foundation (grant no. F1464). N.S.C. and T.M. acknowledge SERB, India (project no. SPO/SERB/MET/2018547) for financial support