Amorphous metallic alloys: a new advance in thin-film diffusion barriers for copper metallization

Copper, which has a lower electrical resistivity and a higher resistance to electromigration than aluminum, is currently being evaluated for ULSI applications as a replacement for aluminum. Drawbacks to the use of copper include its strong tendency to oxidation, a high mobility in metals and semiconductors, and a high reactivity with silicon at temperatures as low as 200°C. To overcome these problems, very effective diffusion barriers need to be developed. These barriers should have a low diffusivity for copper, a high thermal stability, and should lack a driving force for chemical reactions with Cu, silicon or silicides. Unlike aluminum, copper does not form stable intermetallic compounds with the transition metals of the V and Cr groups, and the mutual solid solubilities of these metals with Cu are low, so that these metals would seem th be a logical choice for barrier applications. It has long been known, however, that these arguments are misleading[1]. Previous studies have indeed shown Cu diffuses through grain boundaries and defects in a tantalum layer and inth silicon at a relatively low temperature (450°C) causing a failure of devices[2,3]. The effectiveness of non-reactive and insoluble tantalum barriers can be improved by adding impurities like oxygen or nitrogen th stuff grain boundaries of the material in order th suppress fast grain boundary diffusion[4]. It is difficult, however to reproducibly improve the effectiveness of barriers by adjusting the level of impurities. Since amorphous alloys lack grain boundaries that can act as fast diffusion paths, they should offer an improved alternative for effective barriers [5-71. In this paper we report on the properties and diffusion barrier performance of amorphous tantalum and tungsten silicides and tantalum-silicon-nitrogen ternary alloys [3,81 for Cu metallizations

Amorphous metallic alloys: a new advance in thin-film diffusion barriers for copper metallization

Copper, which has a lower electrical resistivity and a higher resistance to electromigration than aluminum, is currently being evaluated for ULSI applications as a replacement for aluminum. Drawbacks to the use of copper include its strong tendency to oxidation, a high mobility in metals and semiconductors, and a high reactivity with silicon at temperatures as low as 200°C. To overcome these problems, very effective diffusion barriers need to be developed. These barriers should have a low diffusivity for copper, a high thermal stability, and should lack a driving force for chemical reactions with Cu, silicon or silicides. Unlike aluminum, copper does not form stable intermetallic compounds with the transition metals of the V and Cr groups, and the mutual solid solubilities of these metals with Cu are low, so that these metals would seem th be a logical choice for barrier applications. It has long been known, however, that these arguments are misleading[1]. Previous studies have indeed shown Cu diffuses through grain boundaries and defects in a tantalum layer and inth silicon at a relatively low temperature (450°C) causing a failure of devices[2,3]. The effectiveness of non-reactive and insoluble tantalum barriers can be improved by adding impurities like oxygen or nitrogen th stuff grain boundaries of the material in order th suppress fast grain boundary diffusion[4]. It is difficult, however to reproducibly improve the effectiveness of barriers by adjusting the level of impurities. Since amorphous alloys lack grain boundaries that can act as fast diffusion paths, they should offer an improved alternative for effective barriers [5-71. In this paper we report on the properties and diffusion barrier performance of amorphous tantalum and tungsten silicides and tantalum-silicon-nitrogen ternary alloys [3,81 for Cu metallizations

Technology for Entry Probes

A viewgraph describing technologies for entry probes is presented. The topics include: 1) Entry Phase; 2) Descent Phase; 3) Long duration atmospheric observations; 4) Survivability at high temperatures; and 5) Summary

Developments in Radiation-Hardened Electronics Applicable to the Vision for Space Exploration

The Radiation Hardened Electronics for Space Exploration (RHESE) project develops the advanced technologies required to produce radiation hardened electronics, processors, and devices in support of the anticipated requirements of NASA's Constellation program. Methods of protecting and hardening electronics against the encountered space environment are discussed. Critical stages of a spaceflight mission that are vulnerable to radiation-induced interruptions or failures are identified. Solutions to mitigating the risk of radiation events are proposed through the infusion of RHESE technology products and deliverables into the Constellation program's spacecraft designs

Microfabricated thermoelectric power-generation devices

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component

High-Performance, Radiation-Hardened Electronics for Space Environments

The Radiation Hardened Electronics for Space Environments (RHESE) project endeavors to advance the current state-of-the-art in high-performance, radiation-hardened electronics and processors, ensuring successful performance of space systems required to operate within extreme radiation and temperature environments. Because RHESE is a project within the Exploration Technology Development Program (ETDP), RHESE's primary customers will be the human and robotic missions being developed by NASA's Exploration Systems Mission Directorate (ESMD) in partial fulfillment of the Vision for Space Exploration. Benefits are also anticipated for NASA's science missions to planetary and deep-space destinations. As a technology development effort, RHESE provides a broad-scoped, full spectrum of approaches to environmentally harden space electronics, including new materials, advanced design processes, reconfigurable hardware techniques, and software modeling of the radiation environment. The RHESE sub-project tasks are: SelfReconfigurable Electronics for Extreme Environments, Radiation Effects Predictive Modeling, Radiation Hardened Memory, Single Event Effects (SEE) Immune Reconfigurable Field Programmable Gate Array (FPGA) (SIRF), Radiation Hardening by Software, Radiation Hardened High Performance Processors (HPP), Reconfigurable Computing, Low Temperature Tolerant MEMS by Design, and Silicon-Germanium (SiGe) Integrated Electronics for Extreme Environments. These nine sub-project tasks are managed by technical leads as located across five different NASA field centers, including Ames Research Center, Goddard Space Flight Center, the Jet Propulsion Laboratory, Langley Research Center, and Marshall Space Flight Center. The overall RHESE integrated project management responsibility resides with NASA's Marshall Space Flight Center (MSFC). Initial technology development emphasis within RHESE focuses on the hardening of Field Programmable Gate Arrays (FPGA)s and Field Programmable Analog Arrays (FPAA)s for use in reconfigurable architectures. As these component/chip level technologies mature, the RHESE project emphasis shifts to focus on efforts encompassing total processor hardening techniques and board-level electronic reconfiguration techniques featuring spare and interface modularity. This phased approach to distributing emphasis between technology developments provides hardened FPGA/FPAAs for early mission infusion, then migrates to hardened, board-level, high speed processors with associated memory elements and high density storage for the longer duration missions encountered for Lunar Outpost and Mars Exploration occurring later in the Constellation schedule

Microfabricated Thermoelectric Power-Generation Devices

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component

Radiation Hardened Electronics for Space Environments (RHESE)

Radiation Environmental Modeling is crucial to proper predictive modeling and electronic response to the radiation environment. When compared to on-orbit data, CREME96 has been shown to be inaccurate in predicting the radiation environment. The NEDD bases much of its radiation environment data on CREME96 output. Close coordination and partnership with DoD radiation-hardened efforts will result in leveraged - not duplicated or independently developed - technology capabilities of: a) Radiation-hardened, reconfigurable FPGA-based electronics; and b) High Performance Processors (NOT duplication or independent development)

Mitigating Extreme Environments for In-Situ Jupiter and Venus Missions

In response to the recommendations by the National Research Council (NRC), NASA's Solar System Exploration (SSE) Roadmap identified the in situ exploration of Venus and Jupiter as high priority science objectives. For Jupiter, deep entry probes are recommended, which would descend to approx.250 km - measured from the 1 bar pressure depth. At this level the pressure would correspond to approx.100 bar and the temperature would reach approx.500(deg)C. Similarly, at the surface of Venus the temperature and pressure conditions are approx.460(deg)C and approx.90 bar. Lifetime of the Jupiter probes during descent can be measured in hours, while in{situ operations at and near the surface of Venus are envisioned over weeks or months. In this paper we discuss technologies, which share commonalities in mitigating these extreme conditions over proposed mission lifetimes, specially focusing on pressure and temperature environments

Technology perspectives in the future exploration of Venus

International audienceScience goals to understand the origin, history and environment of Venus have been driving international space exploration missions for over 40 years. Today, Venus is still identified as a high priority science target in NASA's Solar System Exploration Roadmap, and clearly fits scientific objectives of ESA's Cosmic Vision Program in addition to the ongoing Venus Express mission, while JAXA is planning to launch its own Venus Climate Orbiter. Technology readiness has often been the pivotal factor in mission prioritization. Missions in all classes—small, medium or large—could be designed as orbiters with remote sensing capabilities, however, the desire for scientific advancements beyond our current knowledge point to in-situ exploration of Venus at the surface and lower atmosphere, involving probes, landers, and aerial platforms. High altitude balloons could circumnavigate Venus repeatedly; deep probes could operate for extended periods utilizing thermal protection technologies, pressure vessel designs and advancements in high temperature electronics. In situ missions lasting for over an Earth day could employ a specially designed dynamic Stirling Radioisotope Generator (SRG) power system, that could provide both electric power and active thermal control to the spacecraft. An air mobility platform, possibly employing metallic bellows, could allow for all axis control, long traversing and surface access at multiple desired locations, thus providing an advantage over static lander or rover based architectures. Sample return missions are also featured in all planetary roadmaps. The Venus exploration plans over the next three decades are anticipated to greatly contribute to our understanding of this planet, which subsequently would advance our overall knowledge about Solar System history and habitability