Low-Energy Electron Microscopy Studies of Interlayer Mass Transport Kinetics on TiN(111)

In situ low-energy electron microscopy was used to study interlayer mass transport kinetics during annealing of three-dimensional (3D) TiN(111) mounds, consisting of stacked 2D islands, at temperatures T between 1550 and 1700 K. At each T, the islands decay at a constant rate, irrespective of their initial position in the mounds, indicating that mass is not conserved locally. From temperature-dependent island decay rates, we obtain an activation energy of 2.8+/-0.3 eV. This is consistent with the detachment-limited decay of 2D TiN islands on atomically-flat TiN(111) terraces [Phys. Rev. Lett. 89 (2002) 176102], but significantly smaller than the value, 4.5+/-0.2 eV, obtained for bulk-diffusion-limited spiral step growth [Nature 429, 49 (2004)]. We model the process based upon step flow, while accounting for step-step interactions, step permeability, and bulk mass transport. The results show that TiN(111) steps are highly permeable and exhibit strong repulsive temperature-dependent step-step interactions that vary between 0.003 and 0.076 eV-nm. The rate-limiting process controlling TiN(111) mound decay is surface, rather than bulk, diffusion in the detachment-limited regime.Comment: 26 pages, 5 figure

First-principles calculations of step formation energies and step interactions on TiN(001)

We study the formation energies and repulsive interactions of monatomic steps on the TiN(001) surface, using density functional total-energy calculations. The calculated formation energy of [100] oriented steps agree well with recently reported experimental values; these steps are shown to have a rumpled structure, with the Ti atoms undergoing larger displacements than the N atoms. For steps that are parallel to [110], our calculations predict a nitrogen (N) termination, as the corresponding formation energy is several hundred meV/\AA \ smaller than that of Ti-terminated steps

Orientation-dependent binding energy of graphene on palladium

Using density functional theory calculations, we show that the binding strength of a graphene monolayer on Pd(111) can vary between physisorption and chemisorption depending on its orientation. By studying the interfacial charge transfer, we have identified a specific four-atom carbon cluster that is responsible for the local bonding of graphene to Pd(111). The areal density of such clusters varies with the in-plane orientation of graphene, causing the binding energy to change accordingly. Similar investigations can also apply to other metal substrates, and suggests that physical, chemical, and mechanical properties of graphene may be controlled by changing its orientation.Comment: 5 pages, 6 figure

Electrochemical electron beam lithography: Write, read, and erase metallic nanocrystals on demand.

We develop a solution-based nanoscale patterning technique for site-specific deposition and dissolution of metallic nanocrystals. Nanocrystals are grown at desired locations by electron beam-induced reduction of metal ions in solution, with the ions supplied by dissolution of a nearby electrode via an applied potential. The nanocrystals can be "erased" by choice of beam conditions and regrown repeatably. We demonstrate these processes via in situ transmission electron microscopy using Au as the model material and extend to other metals. We anticipate that this approach can be used to deposit multicomponent alloys and core-shell nanostructures with nanoscale spatial and compositional resolutions for a variety of possible applications

A facet is not an island: step-step interactions and the fluctuations of the boundary of a crystal facet

In a recent paper [Ferrari et al., Phys. Rev. E 69, 035102(R) (2004)], the scaling law of the fluctuations of the step limiting a crystal facet has been computed as a function of the facet size. Ferrari et al. use rigorous, but physically rather obscure, arguments. Approaching the problem from a different perspective, we rederive more transparently the scaling behavior of facet edge fluctuations as a function of time. Such behavior can be scrutinized with STM experiments and with numerical simulations.Comment: 3 page

Geometrical Frustration in Nanowire Growth

Idealized nanowire geometries assume stable sidewalls at right angles to the growth front. Here we report growth simulations that include a mix of nonorthogonal facet orientations, as for Au-catalyzed Si. We compare these with in situ microscopy observations, finding striking correspondences. In both experiments and simulations, there are distinct growth modes that accommodate the lack of right angles in different ways-one through sawtooth-textured sidewalls, the other through a growth front at an angle to the growth axis. Small changes in conditions can reversibly switch the growth between modes. The fundamental differences between these modes have important implications for control of nanowire growth

Nanoscale Equilibrium Crystal Shapes

The finite size and interface effects on equilibrium crystal shape (ECS) have been investigated for the case of a surface free energy density including step stiffness and inverse-square step-step interactions. Explicitly including the curvature of a crystallite leads to an extra boundary condition in the solution of the crystal shape, yielding a family of crystal shapes, governed by a shape parameter c. The total crystallite free energy, including interface energy, is minimized for c=0, yielding in all cases the traditional PT shape (z x3/2). Solutions of the crystal shape for c≠0 are presented and discussed in the context of meta-stable states due to the energy barrier for nucleation. Explicit scaled relationships for the ECS and meta-stable states in terms of the measurable step parameters and the interfacial energy are presented.Comment: 35 page

GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions

GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self assembled structures for nanospintronics.Comment: 13 pages, 6 figure