316 research outputs found
Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures
We have studied the ensemble photoluminescence (PL) of 11 GaSb/GaAs quantum dot/ring (QD/QR) samples over ≥5 orders of magnitude of laser power. All samples exhibit a blueshift of PL energy, ΔE, with increasing excitation power, as expected for type-II structures. It is often assumed that this blueshift is due to band-bending at the type-II interface. However, for a sample where charge-state sub-peaks are observed within the PL emission, it is unequivocally shown that the blueshift due to capacitive charging is an order of magnitude larger than the band bending contribution. Moreover, the size of the blueshift and its linear dependence on occupancy predicted by a simple capacitive model are faithfully replicated in the data. In contrast, when QD/QR emission intensity, I, is used to infer QD/QR occupancy, n, via the bimolecular recombination approximation (I ∝ n 2), exponents, x, in Δ E ∝ I x are consistently lower than expected, and strongly sample dependent. We conclude that the exponent x cannot be used to differentiate between capacitive charging and band bending as the origin of the blueshift in type-II QD/QRs, because the bimolecular recombination is not applicable to type-II QD/QRs
Response theory for time-resolved second-harmonic generation and two-photon photoemission
A unified response theory for the time-resolved nonlinear light generation
and two-photon photoemission (2PPE) from metal surfaces is presented. The
theory allows to describe the dependence of the nonlinear optical response and
the photoelectron yield, respectively, on the time dependence of the exciting
light field. Quantum-mechanical interference effects affect the results
significantly. Contributions to 2PPE due to the optical nonlinearity of the
surface region are derived and shown to be relevant close to a plasmon
resonance. The interplay between pulse shape, relaxation times of excited
electrons, and band structure is analyzed directly in the time domain. While
our theory works for arbitrary pulse shapes, we mainly focus on the case of two
pulses of the same mean frequency. Difficulties in extracting relaxation rates
from pump-probe experiments are discussed, for example due to the effect of
detuning of intermediate states on the interference. The theory also allows to
determine the range of validity of the optical Bloch equations and of
semiclassical rate equations, respectively. Finally, we discuss how collective
plasma excitations affect the nonlinear optical response and 2PPE.Comment: 27 pages, including 11 figures, version as publishe
Imaging Single ZnO Vertical Nanowire Laser Cavities Using UV-laser Scanning Confocal Microscopy
Quantum fluids of light
This article reviews recent theoretical and experimental advances in the
fundamental understanding and active control of quantum fluids of light in
nonlinear optical systems. In presence of effective photon-photon interactions
induced by the optical nonlinearity of the medium, a many-photon system can
behave collectively as a quantum fluid with a number of novel features stemming
from its intrinsically non-equilibrium nature. We present a rich variety of
photon hydrodynamical effects that have been recently observed, from the
superfluid flow around a defect at low speeds, to the appearance of a
Mach-Cherenkov cone in a supersonic flow, to the hydrodynamic formation of
topological excitations such as quantized vortices and dark solitons at the
surface of large impenetrable obstacles. While our review is mostly focused on
a class of semiconductor systems that have been extensively studied in recent
years (namely planar semiconductor microcavities in the strong light-matter
coupling regime having cavity polaritons as elementary excitations), the very
concept of quantum fluids of light applies to a broad spectrum of systems,
ranging from bulk nonlinear crystals, to atomic clouds embedded in optical
fibers and cavities, to photonic crystal cavities, to superconducting quantum
circuits based on Josephson junctions. The conclusive part of our article is
devoted to a review of the exciting perspectives to achieve strongly correlated
photon gases. In particular, we present different mechanisms to obtain
efficient photon blockade, we discuss the novel quantum phases that are
expected to appear in arrays of strongly nonlinear cavities, and we point out
the rich phenomenology offered by the implementation of artificial gauge fields
for photons.Comment: Accepted for publication on Rev. Mod. Phys. (in press, 2012
White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode
We report the fabrication of heterostructure white light–emitting diode (LED) comprised of n-ZnO nanotubes (NTs) aqueous chemically synthesized on p-GaN substrate. Room temperature electroluminescence (EL) of the LED demonstrates strong broadband white emission spectrum consisting of predominating peak centred at 560 nm and relatively weak violet–blue emission peak at 450 nm under forward bias. The broadband EL emission covering the whole visible spectrum has been attributed to the large surface area and high surface states of ZnO NTs produced during the etching process. In addition, comparison of the EL emission colour quality shows that ZnO nanotubes have much better quality than that of the ZnO nanorods. The colour-rendering index of the white light obtained from the nanotubes was 87, while the nanorods-based LED emit yellowish colour
Synthesis and Thermal Stability of Cubic ZnO in the Salt Nanocomposites
Cubic zinc oxide (rs-ZnO), metastable under normal conditions, was
synthesized from the wurtzite modification (w-ZnO) at 7.7 GPa and ~800 K in the
form of nanoparticles isolated in the NaCl matrix. The phase transition rs-ZnO
\rightarrow w-ZnO in nanocrystalline zinc oxide under ambient pressure was
experimentally studied for the first time by differential scanning calorimetry
and high-temperature X-ray diffraction. It was shown that the transition occurs
in the 370-430 K temperature range and its enthalpy at 400 K is -10.2 \pm 0.5
kJ mol-1.Comment: 12 pages, 4 figures, 1 tabl
Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes
Light-emitting diodes (LEDs) based on zinc oxide (ZnO) nanorods grown by vapor-liquid-solid catalytic growth method were irradiated with 2-MeV helium (He+) ions. The fabricated LEDs were irradiated with fluencies of approximately 2 × 1013 ions/cm2 and approximately 4 × 1013 ions/cm2. Scanning electron microscopy images showed that the morphology of the irradiated samples is not changed. The as-grown and He+-irradiated LEDs showed rectifying behavior with the same I-V characteristics. Photoluminescence (PL) measurements showed that there is a blue shift of approximately 0.0347 and 0.082 eV in the near-band emission (free exciton) and green emission of the irradiated ZnO nanorods, respectively. It was also observed that the PL intensity of the near-band emission was decreased after irradiation of the samples. The electroluminescence (EL) measurements of the fabricated LEDs showed that there is a blue shift of 0.125 eV in the broad green emission after irradiation and the EL intensity of violet emission approximately centered at 398 nm nearly disappeared after irradiations. The color-rendering properties show a small decrease in the color-rendering indices of 3% after 2 MeV He+ ions irradiation
Monte Carlo simulation of ultrafast processes in photoexcited semiconductors: Coherent and incoherent dynamics
The ultrafast dynamics of photoexcited carriers in a semiconductor is investigated by using a Monte Carlo simulation. In addition to a ‘‘conventional’’ Monte Carlo simulation, the coherence of the external light field and the resulting coherence in the carrier system are fully taken into account. This allows us to treat the correct time dependence of the generation process showing a time-dependent linewidth associated with a recombination from states off resonance due to stimulated emission. The subsequent dephasing of the carriers due to scattering processes is analyzed. In addition, the simulation contains the carrier-carrier interaction in Hartree-Fock approximation giving rise to a band-gap renormalization and excitonic effects which cannot be treated in a conventional Monte Carlo simulation where polarization effects are neglected. Thus the approach presents a unified numerical method for the investigation of phenomena occurring close to the band gap and those typical for the energy relaxation of hot carriers
Luminescence spectra and kinetics of disordered solid solutions
We have studied both theoretically and experimentally the luminescence spectra and kinetics of crystalline, disordered solid solutions after pulsed excitation. First, we present the model calculations of the steady-state luminescence band shape caused by recombination of excitons localized in the wells of random potential induced by disorder. Classification of optically active tail states of the main exciton band into two groups is proposed. The majority of the states responsible for the optical absorption corresponds to the group of extended states belonging to the percolation cluster, whereas only a relatively small group of “radiative” states forms the steady-state luminescence band. The continuum percolation theory is applied to distinguish the “radiative” localized states, which are isolated in space and have no ways for nonradiative transitions along the tail states. It is found that the analysis of the exciton-phonon interaction gives the information about the character of the localization of excitons. We have shown that the model used describes quite well the experimental cw spectra of CdS(1−c)Sec and ZnSe(1−c)Tec solid solutions. Further, the experimental results are presented for the temporal evolution of the luminescence band. It is shown that the changes of band shape with time come from the interplay of population dynamics of extended states and spatially isolated “radiative” states. Finally, the measurements of the decay of the spectrally integrated luminescence intensity at long delay times are presented. It is shown that the observed temporal behavior can be described in terms of relaxation of separated pairs followed by subsequent exciton formation and radiative recombination. Electron tunneling processes are supposed to be responsible for the luminescence in the long-time limit at excitation below the exciton mobility edge. At excitation by photons with higher energies the diffusion of electrons can account for the observed behavior of the luminescence
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