X-Ray Standing-Wave Investigations of Valence Electronic Structure

We have examined the valence-electron emission from Cu, Ge, GaAs, InP, and NiO single crystals under the condition of strong x-ray Bragg reflection; i.e., in the presence of the spatially modulated x-ray standing-wave interference field that is produced by the superposition of the incident and reflected x-ray beams. These crystals span the entire metallic, covalent, and ionic range of solid-state bonding. It is demonstrated that the valenceelectron emission is closely coupled to the atomic cores, even for electron states close to a metallic Fermi edge. Using the bond-orbital approximation, the x-ray standing-wave structure factor for valence-electron emission is derived in terms of the bond polarities and photoionization cross sections of the atoms within the crystalline unit cell and compared to experiment. Additionally, we demonstrated that by exploiting the spatial dependence of the electric-field intensity under Bragg condition, site specific valence electronic structure may be obtained. The technique is demonstrated for GaAs and NiO

Biogenic nano-magnetite and nano-zero valent iron treatment of alkaline Cr(VI) leachate and chromite ore processing residue

Highly reactive nano-scale biogenic magnetite (BnM), synthesized by the Fe(III)-reducing bacterium Geobacter sulfurreducens, was tested for the potential to remediate alkaline Cr(VI) contaminated waters associated with chromite ore processing residue (COPR). The performance of this biomaterial, targeting aqueous Cr(VI) removal, was compared to a synthetic alternative, nano-scale zero valent iron (nZVI). Samples of highly contaminated alkaline groundwater and COPR solid waste were obtained from a contaminated site in Glasgow, UK. During batch reactivity tests, Cr(VI) removal from groundwater was inhibited by ~25% (BnM) and ~50% (nZVI) when compared to the treatment of less chemically complex model pH 12 Cr(VI) solutions. In both the model Cr(VI) solutions and contaminated groundwater experiments the surface of the nanoparticles became passivated, preventing complete coupling of their available electrons to Cr(VI) reduction. To investigate this process, the surfaces of the reacted samples were analyzed by TEM-EDX, XAS and XPS, confirming Cr(VI) reduction to the less soluble Cr(III) on the nanoparticle surface. In groundwater reacted samples the presence of Ca, Si and S was also noted on the surface of the nanoparticles, and is likely responsible for earlier onset of passivation. Treatment of the solid COPR material in contact with water, by addition of increasing weight % of the nanoparticles, resulted in a decrease in aqueous Cr(VI) concentrations to below detection limits, via the addition of ≥5% w/w BnM or ≥1% w/w nZVI. XANES analysis of the Cr K edge, showed that the % Cr(VI) in the COPR dropped from 26% to a minimum of 4-7% by the addition of 5% w/w BnM or 2% w/w nZVI, with higher additions unable to reduce the remaining Cr(VI). The treated materials exhibited minimal re-mobilization of soluble Cr(VI) by re-equilibration with atmospheric oxygen, with the bulk of the Cr remaining in the solid fraction. Both nanoparticles exhibited a considerable capacity for the remediation of COPR related Cr(VI) contamination, with the synthetic nZVI demonstrating greater reactivity than the BnM. However, the biosynthesized BnM was also capable of significant Cr(VI) reduction and demonstrated a greater efficiency for the coupling of its electrons towards Cr(VI) reduction than the nZVI

The Si(111)/Cu interface studied with surface sensitive techniques

The formation of the Cu/Si interface is described on the basis of joint photoemission (valence band and Si 2p core levels) and Auger lineshape (SiL2,3VV) analysis. The system is characterized by an extended mixed phase where a silicidelike compound of average stoichiometry Cu3Si is formed and appears to be stable for an extended range of Cu coverages and annealing temperatures. The intermixing is strongly temperature dependent, but the chemical reaction between Cu and the top layers of Si can proceed even at 100 K