Compositional analysis of silicon

The use of surface analysis methods in the detection and evaluation of elemental and impurity species in Si is presented. Examples are provided from polycrystalline Si and high-efficiency MINP cells. Auger electron spectroscopy and secondary ion mass spectrometry are used to complement microelectrical data obtained by electron-beam induced-current measurements. A new method is discussed which utilizes the volume indexing of digital secondary ion mass spectroscopy signals, providing compositional information and impurity maps on internal materials/device interfaces

Economic Analysis of a Brackish Water Photovoltaic-Operated (BWRO-PV) Desalination System

The photovoltaic (PV)-powered reverse-osmosis (RO) desalination system is considered one of the most promising technologies in producing fresh water from both brackish and sea water, especially for small systems located in remote areas. We analyze the economic viability of a small PV-operated RO system with a capacity of 5 m3/day used to desalinate brackish water of 4000 ppm total dissolve solids, which is proposed to be installed in a remote area of the Babylon governorate in the middle of Iraq; this area possesses excellent insolation throughout the year. Our analysis predicts very good economic and environmental benefits of using this system. The lowest cost of fresh water achieved from using this system is US $3.98/ m3, which is very reasonable compared with the water cost reported by small-sized desalination plants installed in rural areas in other parts of the world. Our analysis shows that using this small system will prevent the release annually of 8,170 kg of CO2, 20.2 kg of CO, 2.23 kg of CH, 1.52 kg of particulate matter, 16.41 kg of SO2, and 180 kg of NOx

Effect of p-d hybridization and structural distortion on the electronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors

We have carried out ab-initio calculation and study of structural and electronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors using Density Functional Theory (DFT) based self consistent Tight binding Linear Muffin Tin orbital (TB-LMTO) method. Calculated equlibrium values of lattice constants, anion displacement parameter (u), tetragonal distortion ({\eta} = c/2a) and bond lengths have good agreement with experimental values. Our study suggests these semiconductors to be direct band gap semiconductors with band gaps 1.98 eV, 1.59 eV and 1.36 eV respectively. These are in good agreement with experimental value within the limitation of local density approximation (LDA). Our explicit study of the effects of anion displacement and p-d hybridization show that band gap increases by 9.8%, 8.2% and 5.1% respectively for AgAlM2 (M = S, Se, Te) due to former effect and decreases by 51%, 47% and 42% respectively due to later effect.Comment: 15 pages, 17 figures, This article has been communicated to Solid State Communication

On the selective deposition of tin and tin oxide on various glasses using a high power diode laser

The deposition of SnO2 using a 120 W high power diode laser (HPDL) on both fused silica and soda-lime-silica glass has been successfully demonstrated. Deposition on both glass substrates was carried out with laser power densities of 650-1600 W cm-2 and at rates of 420-1550 mm min-1. The thickness of the deposited layers was typically around 250 m. The maximum theoretical coverage rate that it may be possible to achieve using the HPDL was calculated as being 3.72 m2 h-1. Owing to the wettability characteristics of Sn, it proved impossible to deposit the metal on either glass substrate. Evidence of solidified microstructures was observed, with the microstructures differing considerably across the same deposited track. These differences were attributed to variations in the solidification rate, R, and the thermal gradient, G. Adhesion of the SnO2 with the soda-lime-silica glass was found to be due to mechanical bonding. The adhesion of the SnO2 with the fused silica was seen to the result of a chemical bond arising from an interface region between the SnO2 and the fused silica glass substrate. This interface region was found to be comprised of mainly Si and rich with Sn3O4

Cross-Section AFM and EFM Examination of Thin-Film Solar Cells

We demonstrated the feasibility of analyzing cross sections of thin-film CdTe/CdS and CIGS/CdS solar cells using atomic force microscopy (AFM)

Transport properties of CuGaSe(2)-based thin-film solar cells as a function of absorber composition

The transport properties of thin-film solar cells based on wide-gap CuGaSe(2) absorbers have been investigated as a function of the bulk [Ga]/[Cu] ratio ranging from 1.01 to 1.33. We find that (i) the recombination processes in devices prepared from absorbers with a composition close to stoichiometry ([Ga]/[Cu] = 1.01) are strongly tunnelling assisted resulting in low recombination activation energies (E(a)) of approx. 0.95 eV in the dark and 1.36 eV under illumination. (ii) With an increasing [Ga]/[Cu] ratio, the transport mechanism changes to be dominated by thermally activated Shockley-Read-Hall recombination with similar E(a) values of approx. 1.52-1.57 eV for bulk [Ga]/[Cu] ratios of 1.12-1.33. The dominant recombination processes take place at the interface between CdS buffer and CuGaSe(2) absorber independently from the absorber composition. The increase of E(a) with the [Ga]/[Cu] ratio correlates with the open circuit voltage and explains the better performance of corresponding solar cells