Coherent transport in Nb/delta-doped-GaAs hybrid microstructures

Coherent transport in Nb/GaAs superconductor-semiconductor microstructures is presented. The structures fabrication procedure is based on delta-doped layers grown by molecular-beam-epitaxy near the GaAs surface, followed by an As cap layer to protect the active semiconductor layers during ex situ transfer. The superconductor is then sputter deposited in situ after thermal desorption of the protective layer. Two types of structures in particular will be discussed, i.e., a reference junction and the engineered one that contains an additional insulating AlGaAs barrier inserted during the growth in the semiconductor. This latter configuration may give rise to controlled interference effects and realizes the model introduced by de Gennes and Saint-James in 1963. While both structures show reflectionless tunneling-dominated transport, only the engineered junction shows additionally a low-temperature single marked resonance peaks superimposed to the characteristic Andreev-dominated subgap conductance. The analysis of coherent magnetotransport in both microstructures is successfully performed within the random matrix theory of Andreev transport and ballistic effects are included by directly solving the Bogoliubov-de Gennes equations. The impact of junction morphology on reflectionless tunneling and the application of the employed fabrication technique to the realization of complex semiconductor-superconductor systems are furthermore discussed.Comment: 9 pages, 8 figures, invited review paper, to be published in Mod. Phys. Lett.

Voltage modulated electro-luminescence spectroscopy and negative capacitance - the role of sub-bandgap states in light emitting devices

Voltage modulated electroluminescence spectra and low frequency ({\leq} 100 kHz) impedance characteristics of electroluminescent diodes are studied. Voltage modulated light emission tracks the onset of observed negative capacitance at a forward bias level for each modulation frequency. Active participation of sub-bandgap defect states in minority carrier recombination dynamics is sought to explain the results. Negative capacitance is understood as a necessary dielectric response to compensate any irreversible transient changes in the minority carrier reservoir due to radiative recombinations mediated by slowly responding sub-bandgap defects. Experimentally measured variations of the in-phase component of modulated electroluminescence spectra with forward bias levels and modulation frequencies support the dynamic influence of these states in the radiative recombination process. Predominant negative sign of the in-phase component of voltage modulated electroluminescence signal further confirms the bi-molecular nature of light emission. We also discuss how these states can actually affect the net density of minority carriers available for radiative recombination. Results indicate that these sub-bandgap states can suppress external quantum efficiency of such devices under high frequency operation commonly used in optical communication.Comment: 21 pages, 4 sets of figure

2MASS J05162881+2607387: A New Low-Mass Double-Lined Eclipsing Binary

We show that the star known as 2MASS J05162881+2607387 (hereafter J0516) is a double-lined eclipsing binary with nearly identical low-mass components. The spectroscopic elements derived from 18 spectra obtained with the High Resolution Spectrograph on the Hobby-Eberly Telescope during the Fall of 2005 are K_1=88.45 +/- 0.48 km/s and K_2=90.43 +/- 0.60 km/s, resulting in a mass ratio of$q=K_1/K_2 = 0.978 +/- 0.018 and minimum masses of M_1 sin^{3}i=0.775 +/- 0.016 solar masses and M_2 sin^{3}i=0.759 +/- 0.012 solar masses, respectively. We have extensive differential photometry of J0516 obtained over several nights between 2004 January-March (epoch 1) and 2004 October-2005 January plus 2006 January (epoch 2) using the 1m telescope at the Mount Laguna Observatory. The source was roughly 0.1 mag brighter in all three bandpasses during epoch 1 when compared to epoch 2. Also, phased light curves from epoch 1 show considerable out-of-eclipse variability, presumably due to bright spots on one or both stars. In contrast, the phased light curves from epoch 2 show little out-of-eclipse variability. The light curves from epoch 2 and the radial velocity curves were analyzed using our ELC code with updated model atmospheres for low-mass stars. We find the following: M_1=0.787 +/- 0.012 solar masses, R_1=0.788 +/- 0.015 solar radii, M_2=0.770 +/- 0.009 solar masses, and R_2=0.817 +/- 0.010 solar radii. The stars in J0516 have radii that are significantly larger than model predictions for their masses, similar to what is seen in a handful of other well-studied low-mass double-lined eclipsing binaries. We compiled all recent mass and radius determinations from low-mass binaries and determine an empirical mass-radius relation of the form R = 0.0324 + 0.9343M + 0.0374M^2, where the quantities are in solar units.Comment: 16 pages, 10 figures (Figure 1 has degraded quality), to appear in Ap

Ohmic contacts to n-type germanium with low specific contact resistivity

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) x10<sup>-7</sup> Ω-cm<sup>2</sup> for anneal temperatures of 340 degC. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.<p></p&gt

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm−3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm−2 to −6.60 × 1012 cm−2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices

Cygnus X-2: the Descendant of an Intermediate-Mass X-Ray Binary

The X-ray binary Cygnus X-2 (Cyg X-2) has recently been shown to contain a secondary that is much more luminous and hotter than is appropriate for a low-mass subgiant. We present detailed binary-evolution calculations which demonstrate that the present evolutionary state of Cyg X-2 can be understood if the secondary had an initial mass of around 3.5 M_sun and started to transfer mass near the end of its main-sequence phase (or, somewhat less likely, just after leaving the main sequence). Most of the mass of the secondary must have been ejected from the system during an earlier rapid mass-transfer phase. In the present phase, the secondary has a mass of around 0.5 M_sun with a non-degenerate helium core. It is burning hydrogen in a shell, and mass transfer is driven by the advancement of the burning shell. Cyg X-2 therefore is related to a previously little studied class of intermediate-mass X-ray binaries (IMXBs). We suggest that perhaps a significant fraction of X-ray binaries presently classified as low-mass X-ray binaries may be descendants of IMXBs and discuss some of the implications

Magnetic Flares on Asymptotic Giant Branch Stars

We investigate the consequences of magnetic flares on the surface of asymptotic giant branch (AGB) and similar stars. In contrast to the solar wind, in the winds of AGB stars the gas cooling time is much shorter than the outflow time. As a result, we predict that energetic flaring will not inhibit, and may even enhance, dust formation around AGB stars. If magnetic flares do occur around such stars, we expect some AGB stars to exhibit X-ray emission; indeed certain systems including AGB stars, such as Mira, have been detected in X-rays. However, in these cases, it is difficult to distinguish between potential AGB star X-ray emission and, e.g., X-ray emission from the vicinity of a binary companion. Analysis of an archival ROSAT X-ray spectrum of the Mira system suggests an intrinsic X-ray luminosity 2x10^{29} erg/sec and temperature 10^7 K. These modeling results suggest that magnetic activity, either on the AGB star (Mira A) or on its nearby companion (Mira B), is the source of the X-rays, but do not rule out the possibility that the X-rays are generated by an accretion disk around Mira B.Comment: ApJ, Accepted; revised version of astro-ph/020923

Generalized four-point characterization method for resistive and capacitive contacts

In this paper, a four-point characterization method is developed for resistive samples connected to either resistive or capacitive contacts. Provided the circuit equivalent of the complete measurement system is known including coaxial cable and connector capacitances as well as source output and amplifier input impedances, a frequency range and capacitive scaling factor can be determined, whereby four-point characterization can be performed. The technique is demonstrated with a discrete element test sample over a wide frequency range using lock-in measurement techniques from 1 Hz - 100 kHz. The data fit well with a circuit simulation of the entire measurement system. A high impedance preamplifier input stage gives best results, since lock-in input impedances may differ from manufacturer specifications. The analysis presented here establishes the utility of capacitive contacts for four-point characterizations at low frequency.Comment: 21 pages, 10 figure