Strength and fracture of Si micropillars: A new scanning electron microscopy-based micro-compression test

A novel method for in situ scanning electron microscope (SEM) micro-compression tests is presented. The direct SEM observation during the instrumented compression testing allows for very efficient positioning and assessment of the failure mechanism. Compression tests on micromachined Si pillars with volumes down to 2 μm3 are performed inside the SEM, and the results demonstrate the potential of the method. In situ observation shows that small diameter pillars tend to buckle while larger ones tend to crack before failure. Compressive strength increases with decreasing pillar diameter and reaches almost 9 GPa for submicrometer diameter pillars. This result is in agreement with earlier bending experiments on Si. Difficulties associated with precise strain measurements are discusse

In situ compression tests on micron-sized silicon pillars by Raman microscopy—Stress measurements and deformation analysis

Mechanical properties of silicon are of high interest to the microelectromechanical systems community as it is the most frequently used structural material. Compression tests on 8 μm diameter silicon pillars were performed under a micro-Raman setup. The uniaxial stress in the micropillars was derived from a load cell mounted on a microindenter and from the Raman peak shift. Stress measurements from the load cell and from the micro-Raman spectrum are in excellent agreement. The average compressive failure strength measured in the middle of the micropillars is 5.1 GPa. Transmission electron microscopy investigation of compressed micropillars showed cracks at the pillar surface or in the core. A correlation between crack formation and dislocation activity was observed. The authors strongly believe that the combination of nanoindentation and micro-Raman spectroscopy allowed detection of cracks prior to failure of the micropillar, which also allowed an estimation of the in-plane stress in the vicinity of the crack ti

Diamond wire-sawn silicon wafers - from the lab to the cell production

Wafers for the PV industry are mainly sawn with a multi-wire slurry saw. This process is slow (it takes almost half a day to complete a cut) and generates a lot of waste: around half the silicon is sawn away and contaminating the slurry, and the wire is worn and has lost strength. After each cut, the slurry has to be cleaned from the silicon debris and the wire has to be exchanged. In contrast, sawing the wafers with a diamond-plated wire is faster, requires only a cooling liquid that is easy to filter from silicon debris and uses a wire that can be kept for several cut. But this new sawing technique only has a chance to develop if the solar cell production lines developed for slurry sawn wafers is capable of processing these diamond-plated wire sawn wafers efficiently. This study focused on the differences of surface properties of wafers cut via a slurry wire-saw and via a diamond-plated wire-saw. From these surface differences, it is possible to explain the differences in cell processing behaviour and to update the cell production line. Finally, it is shown that wafers sawn with a diamond-plated wire can give cells that are as efficient as the slurry sawn wafers, which validates this new diamond-plated wire wafering method for the production of solar cells

Site-specific perturbations of alpha-synuclein fibril structure by the Parkinson's disease associated mutations A53T and E46K.

PMCID: PMC3591419This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.Parkinson's disease (PD) is pathologically characterized by the presence of Lewy bodies (LBs) in dopaminergic neurons of the substantia nigra. These intracellular inclusions are largely composed of misfolded α-synuclein (AS), a neuronal protein that is abundant in the vertebrate brain. Point mutations in AS are associated with rare, early-onset forms of PD, although aggregation of the wild-type (WT) protein is observed in the more common sporadic forms of the disease. Here, we employed multidimensional solid-state NMR experiments to assess A53T and E46K mutant fibrils, in comparison to our recent description of WT AS fibrils. We made de novo chemical shift assignments for the mutants, and used these chemical shifts to empirically determine secondary structures. We observe significant perturbations in secondary structure throughout the fibril core for the E46K fibril, while the A53T fibril exhibits more localized perturbations near the mutation site. Overall, these results demonstrate that the secondary structure of A53T has some small differences from the WT and the secondary structure of E46K has significant differences, which may alter the overall structural arrangement of the fibrils

Cleavage Fracture of Brittle Semiconductors from the Nanometer to the Centimeter Scale

The objective of this paper is to present the fundamental phenomena occurring during the scribing and subsequent fracturing process usually performed when preparing surfaces of brittle semiconductors. In the first part, an overview of nano-scratching experiments of different semiconductor surfaces (InP, Si and GaAs) is given. It is shown how phase transformation can occur in Si under a diamond tip, how single dislocations can be induced in InP wafers and how higher scratching load of GaAs wafer leads to the apparition of a crack network below the surface. A nano-scratching device, inside a scanning electron microscope (SEM), has been used to observe how spalling (crack and detachment of chips) and/or ductile formation of chips may happen at the semiconductor surface. In the second part cleavage experiments are described. The breaking load of thin GaAs (100) wafers is directly related to the presence of initial sharp cracks induced by scratching. By performing finite element modelling (FEM) of samples under specific loading conditions, it is found that the depth of the median crack below the scratch determines quantitatively the onset of crack propagation. By carefully controlling the position and measuring the force during the cleavage, it is demonstrated that crack propagation through a wafer can be controlled. Besides, the influence of the loading configuration on crack propagation and on the cleaved surface quality is explained. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Self-assembled amyloid fibrils with controllable conformational heterogeneity

Amyloid fibrils are a hallmark of neurodegenerative diseases and exhibit a conformational diversity that governs their pathological functions. Despite recent findings concerning the pathological role of their conformational diversity, the way in which the heterogeneous conformations of amyloid fibrils can be formed has remained elusive. Here, we show that microwave-assisted chemistry affects the self-assembly process of amyloid fibril formation, which results in their conformational heterogeneity. In particular, microwave-assisted chemistry allows for delicate control of the thermodynamics of the self-assembly process, which enabled us to tune the molecular structure of ??-lactoglobulin amyloid fibrils. The heterogeneous conformations of amyloid fibrils, which can be tuned with microwave-assisted chemistry, are attributed to the microwave-driven thermal energy affecting the electrostatic interaction during the self-assembly process. Our study demonstrates how microwave-assisted chemistry can be used to gain insight into the origin of conformational heterogeneity of amyloid fibrils as well as the design principles showing how the molecular structures of amyloid fibrils can be controlledopen0