On mapping functions for torsional analysis of splined shafts

Mapping functions for torsional analysis of splined shaft

Derivation of mapping functions for star- shaped regions

Mapping function derivation for large class of star-shaped regions by Schwarz-Christoffel transformatio

An extension of plane strain analysis

Reformulation of governing equations for isotropic and linear elastic material in state of plane strai

Improvement of an integral equation method in plane elasticity through modification of source density representation

Integral equation method with continuous functions for calculating boundary stress components in plane elasticit

Variability study of Si nanowire FETs with different junction gradients

Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs) are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).1163Ysciescopu

High efficiency silicon solar cell based on asymmetric nanowire

Improving the efficiency of solar cells through novel materials and devices is critical to realize the full potential of solar energy to meet the growing worldwide energy demands. We present here a highly efficient radial p-n junction silicon solar cell using an asymmetric nanowire structure with a shorter bottom core diameter than at the top. A maximum short circuit current density of 27.5 mA/ cm(2) and an efficiency of 7.53% were realized without anti-reflection coating. Changing the silicon nanowire (SiNW) structure from conventional symmetric to asymmetric nature improves the efficiency due to increased short circuit current density. From numerical simulation and measurement of the optical characteristics, the total reflection on the sidewalls is seen to increase the light trapping path and charge carrier generation in the radial junction of the asymmetric SiNW, yielding high external quantum efficiency and short circuit current density. The proposed asymmetric structure has great potential to effectively improve the efficiency of the SiNW solar cells.111918Ysciescopu

Reentrant Melting of Soliton Lattice Phase in Bilayer Quantum Hall System

At large parallel magnetic field $B_\parallel$, the ground state of bilayer quantum Hall system forms uniform soliton lattice phase. The soliton lattice will melt due to the proliferation of unbound dislocations at certain finite temperature leading to the Kosterlitz-Thouless (KT) melting. We calculate the KT phase boundary by numerically solving the newly developed set of Bethe ansatz equations, which fully take into account the thermal fluctuations of soliton walls. We predict that within certain ranges of $B_\parallel$, the soliton lattice will melt at $T_{\rm KT}$. Interestingly enough, as temperature decreases, it melts at certain temperature lower than $T_{\rm KT}$ exhibiting the reentrant behaviour of the soliton liquid phase.Comment: 11 pages, 2 figure