Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al(2)O(3)/Si cells

In this letter, we explore the influence of the Cu(x)Te(1-x) layer composition (0.2 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties. The intermediate range 0.5< x < 0.7 shows optimum memory properties, featuring improved control of filament programming using <5 mu A as well as state stability at 85 degrees C. The composition-dependent programming control and filament stability are closely associated with the phases in the Cu(x)Te(1-x) layer and are explained as related to the chemical affinity between Cu and Te. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3621835

Ten-fold enhancement of InAs nanowire photoluminescence emission with an InP passivation layer

In this letter, we demonstrate that a significant improvement of optical performance of InAs nanowires can be achieved by capping the core InAs nanowires with a thin InP shell, which successfully passivates the surface states reducing the rate of non-radiative recombination. The improvements have been confirmed by detailed photoluminescence measurements, which showed up to ten-fold increase in the intensity of room-temperature photoluminescence from the capped InAs/InP nanowires compared to the sample with core-only InAs nanowires. Moreover, the nanowires exhibit high stability of total photoluminescence emission strength across temperature range from 10 to 300 K as a result of strong quantum confinement. These findings could be the key to successful implementation of InAs nanowires into optoelectronic devices

Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping

The need for a low bandgap semiconductor on a GaAs substrate for thermophotovoltaic applications has motivated research on GaSb alloys, in particular, the control of plastic relaxation of its active layer. Although interfacial misfit arrays offer a possibility of growing strain-free GaSb-based devices on GaAs substrates, a high density of threading dislocations is normally observed. Here, we present the effects of the combined influence of Be dopants and low growth temperature on the threading dislocation density observed by Transmission Electron Microscopy. The Be-related hardening mechanism, occurring at island coalescence, is shown to prevent dislocations to glide and hence reduce the threading dislocation density in these structures. The threading density in the doped GaSb layers reaches the values of seven times less than those observed in undoped samples, which confirms the proposed Be-related hardening mechanism

Introduction of WO3 Layer in a Cu-Based Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window

In this paper, we optimize a WO3\Al2O3 bilayer serving as the electrolyte of a conductive bridge RAM device using a Cu-based supply layer. By introducing a WO3 layer formed by thermal oxidation of a W plug, the hourglass shape of the conductive filament is desirably controlled, enabling excellent switching behavior. We demonstrate a clear improvement of the microstructure and density of the WO3 layer by increasing the oxidation time and temperature, resulting in a strong increase of the high-resistance-state breakdown voltage. The high quality WO3 microstructure allows thus the use of a larger reset pulse amplitude resulting both in larger memory window and failure-free write cycling.1197Ysciescopu

Te-based chalcogenide materials for selector applications

The implementation of dense, one-selector one-resistor (1S1R), resistive switching memory arrays, can be achieved with an appropriate selector for correct information storage and retrieval. Ovonic threshold switches (OTS) based on chalcogenide materials are a strong candidate, but their low thermal stability is one of the key factors that prevents rapid adoption by emerging resistive switching memory technologies. A previously developed map for phase change materials is expanded and improved for OTS materials. Selected materials from different areas of the map, belonging to binary Ge-Te and Si-Te systems, are explored. Several routes, including Si doping and reduction of Te amount, are used to increase the crystallization temperature. Selector devices, with areas as small as 55 x 55 nm(2), were electrically assessed. Sub-threshold conduction models, based on Poole-Frenkel conduction mechanism, are applied to fresh samples in order to extract as-processed material parameters, such as trap height and density of defects, tailoring of which could be an important element for designing a suitable OTS material. Finally, a glass transition temperature estimation model is applied to Te-based materials in order to predict materials that might have the required thermal stability. A lower average number of p-electrons is correlated with a good thermal stability

Adipocyte JAK2 Regulates Hepatic Insulin Sensitivity Independently of Body Composition, Liver Lipid Content, and Hepatic Insulin Signaling.

Disruption of hepatocyte growth hormone (GH) signaling through disruption of Jak2 (JAK2L) leads to fatty liver. Previously, we demonstrated that development of fatty liver depends on adipocyte GH signaling. We sought to determine the individual roles of hepatocyte and adipocyte Jak2 on whole-body and tissue insulin sensitivity and liver metabolism. On chow, JAK2L mice had hepatic steatosis and severe whole-body and hepatic insulin resistance. However, concomitant deletion of Jak2 in hepatocytes and adipocytes (JAK2LA) completely normalized insulin sensitivity while reducing liver lipid content. On high-fat diet, JAK2L mice had hepatic steatosis and insulin resistance despite protection from diet-induced obesity. JAK2LA mice had higher liver lipid content and no protection from obesity but retained exquisite hepatic insulin sensitivity. AKT activity was selectively attenuated in JAK2L adipose tissue, whereas hepatic insulin signaling remained intact despite profound hepatic insulin resistance. Therefore, JAK2 in adipose tissue is epistatic to liver with regard to insulin sensitivity and responsiveness, despite fatty liver and obesity. However, hepatocyte autonomous JAK2 signaling regulates liver lipid deposition under conditions of excess dietary fat. This work demonstrates how various tissues integrate JAK2 signals to regulate insulin/glucose and lipid metabolism

Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals

Resistive-switching random access memory (RRAM) is widely considered as a disruptive technology. Despite tremendous efforts in theoretical modeling and physical analysis, details of how the conductive filament (CF) in metal-oxide-based filamentary RRAM devices is modified during normal device operations remain speculative, because direct experimental evidence at defect level has been missing. In this paper, a random-telegraph-signal-based defect-tracking technique (RDT) is developed for probing the location and movements of individual defects and their statistical spatial and energy characteristics in the CF of state-of-the-art hafnium-oxide RRAM devices. For the first time, the critical filament region of the CF is experimentally identified, which is located near, but not at, the bottom electrode with a length of nanometer scale. We demonstrate with the RDT technique that the modification of this key constriction region by defect movements can be observed and correlated with switching operation conditions, providing insight into the resistive switching mechanism

Polarization-correlated photon pairs from a single ion

In the fluorescence light of a single atom, the probability for emission of a photon with certain polarization depends on the polarization of the photon emitted immediately before it. Here correlations of such kind are investigated with a single trapped calcium ion by means of second order correlation functions. A theoretical model is developed and fitted to the experimental data, which show 91% probability for the emission of polarization-correlated photon pairs within 24 ns.Comment: 8 pages, 9 figure

Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer

One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells is the short lifetime of charge carriers (∼1 ns). To investigate this, InAs QD/GaAs 1--xSbx quantum well (QW) solar cells (SCs) with a 2-nm GaAs interlayer between the QDs and QW were fabricated for x = 0, 0.08, 0.14, and 0.17, respectively. Time-resolved photoluminescence measurements demonstrated prolonged carrier lifetimes up to 480 ns for the type-II SCs with x ≥ 14%. This improvement in carrier lifetime is assigned to the GaAs interlayer that reduces the wavefunction overlap between the electrons accumulated in the QDs and holes in the QW, and hence limits the possible emission pathways. External quantum efficiency measurements were performed to analyze the SC performance. An order of magnitude improvement was observed in the QD region (900–1200 nm) for the type-II SCs and is linked to the prolonged carrier lifetime