1 V CMOS subthreshold log domain PDM

A new CMOS circuit strategy for very low-voltage Pulse-Duration Modulators (PDM) is proposed. Optimization of voltage supply scaling below the sum of threshold voltages is based on Instantaneous Log Companding processing through the MOSFET operating in weak inversion. A 1 V VLSI PDM circuit for very low-voltage audio applications such as Hearing Aids is presented, showing good agreement between simulated and experimental data.Comisión Interministerial de Ciencia y Tecnología TIC97-1159, TIC99-1084European Union 2306

Sobre un híbrido nuevo de Geum L. (Rosaceae) en la provincia de Teruel

Se comunica el hallazgo de un nuevo híbrido del género Geum L. (Rosaceae) localizado en la Sierra de Gúdar (Teruel) que denominamos Geum × gonzaloi, y cuyos parentales son G. hispidum y G. urbanum

Orientational relaxations in solid (1,1,2,2)tetrachloroethane

We employ dielectricspectroscopy and molecular dynamic simulations to investigate the dipolar dynamics in the orientationally disordered solid phase of (1,1,2,2)tetrachloroethane. Three distinct orientational dynamics are observed as separate dielectric loss features, all characterized by a simply activated temperature dependence. The slower process, associated to a glassytransition at 156 ± 1 K, corresponds to a cooperative motion by which each molecule rotates by 180° around the molecular symmetry axis through an intermediate state in which the symmetry axis is oriented roughly orthogonally to the initial and final states. Of the other two dipolar relaxations, the intermediate one is the Johari-Goldstein precursor relaxation of the cooperative dynamics, while the fastest process corresponds to an orientational fluctuation of single molecules into a higher-energy orientation. The Kirkwood correlation factor of the cooperative relaxation is of the order of one tenth, indicating that the molecular dipoles maintain on average a strong antiparallel alignment during their collective motion. These findings show that the combination of dielectricspectroscopy and molecular simulations allows studying in great detail the orientational dynamics in molecular solids.Peer ReviewedPostprint (author's final draft

Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition

We present a high‐resolution electron microscopy study of the microstructure of boron nitride thin films grown on silicon (100) by radio‐frequency plasma‐assisted chemical vapor deposition using B2H6 (1% in H2) and NH3 gases. Well‐adhered boron nitride films grown on the grounded electrode show a highly oriented hexagonal structure with the c‐axis parallel to the substrate surface throughout the film, without any interfacial amorphous layer. We ascribed this textured growth to an etching effect of atomic hydrogen present in the gas discharge. In contrast, films grown on the powered electrode, with compressive stress induced by ion bombardment, show a multilayered structure as observed by other authors, composed of an amorphous layer, a hexagonal layer with the c‐axis parallel to the substrate surface and another layer oriented at rando

Low-voltage CMOS log-companding techniques for audio applications

This paper presents a collection of novel current-mode circuit techniques for the integration of very low-voltage (down to 1 V) low-power (few hundreds of μA) complete SoCs in CMOS technologies. The new design proposal is based on both, the Log Companding theory and the MOSFET operating in subthreshold. Several basic building blocks for audio amplification, AGC and arbitrary filtering are given. The feasibility of the proposed CMOS circuits is illustrated through experimental data for different design case studies in 1.2 and 0.35 μm VLSI technologies.Comisión Interministerial de Ciencia y Tecnología TIC97-1159, TIC99- 1084European Union ESPRIT-FUSE-2306

Quantum Error Correction with magnetic molecules

Quantum algorithms often assume independent spin qubits to produce trivial $|\uparrow\rangle=|0\rangle$, $|\downarrow\rangle=|1\rangle$ mappings. This can be unrealistic in many solid-state implementations with sizeable magnetic interactions. Here we show that the lower part of the spectrum of a molecule containing three exchange-coupled metal ions with $S=1/2$ and $I=1/2$ is equivalent to nine electron-nuclear qubits. We derive the relation between spin states and qubit states in reasonable parameter ranges for the rare earth $^{159}$Tb$^{3+}$ and for the transition metal Cu$^{2+}$, and study the possibility to implement Shor's Quantum Error Correction code on such a molecule. We also discuss recently developed molecular systems that could be adequate from an experimental point of view.Comment: 5 pages, 3 figures, 2 table

60 Years of Urban Development in Denia and its Influence on the Marineta Cassiana Beach

Everyone is aware of the special relationship that man has with the coast; from the beginning of man- kind, humans have been attracted to the littoral zone for the construction of settlements and the use of its resources. Subsequently, humans have evolved, leaving an increasingly large footprint on this medium. Hence, there is a need to deepen our knowledge to protect against the threat that we ourselves pose. Coastal regression mainly due to the lack of sediment is a global problem. The environmental, economic and social interest makes the study of coastal regression a major problem in the institutions. This article places the study area in Denia (Alicante, Spain). In this population, for some time, there has been concern about the effect on the beaches of the sharp erosion of the coastline. The Marineta Cassiana beach has been chosen for this study because of its special location and the set of elements of the environment. Thus, with respect to the beach study, it is observed that the land beside it is a fully urbanized area, which has suffered due to the pressure of development in this area since 1956, limited as it is by background mountains. Therefore, this study encompasses different aspects of the regression of the coast. To this end, a study of the historical evolution of the beach since 1956 has been carried out. The hydrological modelling of river basins discharging to the beach and their changes due to the alteration of the landscape has been carried out, using dynamics and morphological characterization of the area and an analysis of the erosion of these basins. Also, the historical evolution of the surf on the beach, as well as changes in the morphology of the coast, which have influenced the marine climate, have been taken into account

Influence of pressure and radio frequency power on deposition rate and structural properties of hydrogenated amorphous silicon thin films prepared by plasma deposition

The influence of radio frequency (rf) power and pressure on deposition rate and structural properties of hydrogenated amorphous silicon (a-Si:H) thin films, prepared by rf glow discharge decomposition of silane, have been studied by phase modulated ellipsometry and Fourier transform infrared spectroscopy. It has been found two pressure regions separated by a threshold value around 20 Pa where the deposition rate increases suddenly. This behavior is more marked as rf power rises and reflects the transition between two rf discharges regimes. The best quality films have been obtained at low pressure and at low rf power but with deposition rates below 0.2 nm/s. In the high pressure region, the enhancement of deposition rate as rf power increases first gives rise to a reduction of film density and an increase of content of hydrogen bonded in polyhydride form because of plasma polymerization reactions. Further rise of rf power leads to a decrease of polyhydride bonding and the material density remains unchanged, thus allowing the growth of a-Si:H films at deposition rates above 1 nm/s without any important detriment of material quality. This overcoming of deposition rate limitation has been ascribed to the beneficial effects of ion bombardment on the a-Si:H growing surface by enhancing the surface mobility of adsorbed reactive species and by eliminating hydrogen bonded in polyhydride configurations

A mathematical model for dynamic memory networks

The aim of this paper is to bring together the work done several years ago by M.A. Fiol and the other authors to formulate a quite general mathematical model for a kind of permutation networks known as dynamic memories. A dynamic memory is constituted by an array of cells, each storing one datum, and an interconnection network between the cells that allows the constant circulation of the stored data. The objective is to design the interconnection network in order to have short access time and a simple memory control. We review how most of the proposals of dynamic memories that have appeared in the literature fit in this general model, and how it can be used to design new structures with good access properties. Moreover, using the idea of projecting a digraph onto a de Bruijn digraph, we propose new structures for dynamic memories with vectorial capabilities. Some of these new proposals are based on iterated line digraphs, which have been widely and successfully used by M.A. Fiol and his coauthors to solve many different problems in graph theory.Peer Reviewe

Historia urbana: el espacio no es inocente

The paper argues on the substantivity of an urban history focuses on the urban variable. The example of inter-war Working-Class Barcelona is studied in order to assest the relevance of the spatial variable as an explanation of the different union and political atittudes of revolutionary workers.; El artículo pone de manifiesto la sustantividad de una historia urbana enfocada desde la variable espacial. Se toma como ejemplo la investigación sobre la Barcelona obrera de entreguerras, donde sólo una investigación que ponga en relieve el perfil socioespacial de los obreros permite descubrir sus diferentes comportamientos políticos