Suppression of non-Poissonian shot noise by Coulomb correlations in ballistic conductors

We investigate the current injection into a ballistic conductor under the space-charge limited regime, when the distribution function of injected carriers is an arbitrary function of energy F_c(epsilon). The analysis of the coupled kinetic and Poisson equations shows that the injected current fluctuations may be essentially suppressed by Coulomb correlations, and the suppression level is determined by the shape of F_c(epsilon). This is in contrast to the time-averaged quantities: the mean current and the spatial profiles are shown to be insensitive to F_c(epsilon) in the leading-order terms at high biases. The asymptotic high-bias behavior for the energy resolved shot-noise suppression has been found for an arbitrary (non-Poissonian) injection, which may suggest a new field of investigation on the optimization of the injected energy profile to achieve the desired noise-suppression level.Comment: extended version 4 -> 8 pages, examples and figure adde

Suppression of non-Poissonian shot noise by Coulomb correlations in ballistic conductors

We investigate the current injection into a ballistic conductor under the space-charge limited regime, when the distribution function of injected carriers is an arbitrary function of energy F_c(epsilon). The analysis of the coupled kinetic and Poisson equations shows that the injected current fluctuations may be essentially suppressed by Coulomb correlations, and the suppression level is determined by the shape of F_c(epsilon). This is in contrast to the time-averaged quantities: the mean current and the spatial profiles are shown to be insensitive to F_c(epsilon) in the leading-order terms at high biases. The asymptotic high-bias behavior for the energy resolved shot-noise suppression has been found for an arbitrary (non-Poissonian) injection, which may suggest a new field of investigation on the optimization of the injected energy profile to achieve the desired noise-suppression level.Comment: extended version 4 -> 8 pages, examples and figure adde

Shot Noise through a Quantum Dot in the Kondo Regime

The shot noise in the current through a quantum dot is calculated as a function of voltage from the high-voltage, Coulomb blockaded regime to the low-voltage, Kondo regime. Using several complementary approaches, it is shown that the zero-frequency shot noise (scaled by the voltage) exhibits a non-monotonic dependence on voltage, with a peak around the Kondo temperature. Beyond giving a good estimate of the Kondo temperature, it is shown that the shot noise yields additional information on the effects of electronic correlations on the local density of states in the Kondo regime, unaccessible in traditional transport measurements.Comment: 4 pages, 1 figur

Single donor ionization energies in a nanoscale CMOS channel

One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these dopants is already a major issue in the microelectonics industry. While single-dopant signatures have been observed at low temperature, studying the impact of only one dopant up to room temperature requires extremely small lengths. Here, we show that a single arsenic dopant dramatically affects the off-state behavior of an advanced microelectronics field effect transistor (FET) at room temperature. Furthermore, the ionization energy of this dopant should be profoundly modified by the close proximity of materials with a different dielectric constant than the host semiconductor. We measure a strong enhancement, from 54meV to 108meV, of the ionization energy of an arsenic atom located near the buried oxide. This enhancement is responsible for the large current below threshold at room temperature and therefore explains the large variability in these ultra-scaled transistors. The results also suggest a path to incorporating quantum functionalities into silicon CMOS devices through manipulation of single donor orbitals

Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via in-situ gate-based radio frequency reflectometry, where one top-gate electrode is connected to a resonator. The latter removes the need for external charge sensors in quantum computing architectures and provides a compact way to readout the dispersive shift caused by changes in the quantum capacitance during interdot charge transitions. Here, we observe Pauli spin-blockade in the high-frequency response of the circuit at finite magnetic fields between singlet and triplet states. The blockade is lifted at higher magnetic fields when intra-dot triplet states become the ground state configuration. A lineshape analysis of the dispersive phase shift reveals furthermore an intradot valley-orbit splitting $\Delta_{vo}$ of 145 $\mu$eV. Our results open up the possibility to operate compact CMOS technology as a singlet-triplet qubit and make split-gate silicon nanowire architectures an ideal candidate for the study of spin dynamics

Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability?

AbstractIt is very important to study variability of nanodevices because the inability to produce large amounts of identical nanostructures is eventually a bottleneck for any application. In fact variability is already a major concern for CMOS circuits. In this work we report on the variability of dozens of silicon single-electron transistors (SETs). At room temperature their variability is compared with the variability of the most advanced CMOS FET i.e. the ultra thin Silicon-on-Insulator Multiple gate FET (UT SOI MuGFET). We found that dopants diffused from Source –Drain into the edge of the undoped channel are the main source of variability. This emphasizes the role of extrinsic factors like the contact junctions for variability of any nanodevice

Multiple Andreev Reflection and Giant Excess Noise in Diffusive Superconductor/Normal-Metal/Superconductor Junctions

We have studied superconductor/normal metal/superconductor (SNS) junctions consisting of short Au or Cu wires between Nb or Al banks. The Nb based junctions display inherent electron heating effects induced by the high thermal resistance of the NS boundaries. The Al based junctions show in addition subharmonic gap structures in the differential conductance dI/dV and a pronounced peak in the excess noise at very low voltages V. We suggest that the noise peak is caused by fluctuations of the supercurrent at the onset of Josephson coupling between the superconducting banks. At intermediate temperatures where the supercurrent is suppressed a noise contribution ~1/V remains, which may be interpreted as shot noise originating from large multiple charges.Comment: 7 pages, 7 figures, extended versio

Photo--assisted current and shot noise in the fractional quantum Hall effect

The effect of an AC perturbation on the shot noise of a fractional quantum Hall fluid is studied both in the weak and the strong backscattering regimes. It is known that the zero-frequency current is linear in the bias voltage, while the noise derivative exhibits steps as a function of bias. In contrast, at Laughlin fractions, the backscattering current and the backscattering noise both exhibit evenly spaced singularities, which are reminiscent of the tunneling density of states singularities for quasiparticles. The spacing is determined by the quasiparticle charge $\nu e$ and the ratio of the DC bias with respect to the drive frequency. Photo--assisted transport can thus be considered as a probe for effective charges at such filling factors, and could be used in the study of more complicated fractions of the Hall effect. A non-perturbative method for studying photo--assisted transport at $\nu=1/2$ is developed, using a refermionization procedure.Comment: 14 pages, 6 figure

Towards scalable silicon quantum computing

We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures