Enhancement of hole injection for nitride-based light-emitting devices

A novel device design is proposed for a strong enhancement of hole injection current in nitride-based light-emitting heterostructures. Preliminary calculations show orders of magnitude increase in injected hole current when using the proposed superlattice hole injector device based on the real-space transfer concept.Comment: This pdf-file contains 6 pages including 1 figure embedded into the tex

Effects of Hydrogen Implantation into GaN

Proton implantation in GaN is found to reduce the free carrier density through two mechanisms - first, by creating electron and hole traps at around Ec-0.8eV and Ev+0.9eV that lead to compensation in both n- and p-type material, and second, by leading to formation of (AH)O complexes, where A is any acceptor (Mg, Ca, Zn, Be, Cd). The former mechanism is usefid in creating high resistivity regions for device isolation, whereas the latter produces unintentional acceptor passivation that is detrimental to device performance. The strong affinity of hydrogen for acceptors leads to markedly different redistribution behavior for implanted in n- and p-GaN due to the chemical reaction to form neutral complexes in the latter. The acceptors may be reactivated by simple annealing at 2600{degrees}C, or by electron injection at 25-150{degrees}C that produces debonding of the (AH) centers. Implanted hydrogen is also strongly attracted to regions of strain in heterostructure samples during annealing, leading to pile-up at epi-epi and epi-substrate interfaces. II? spectroscopy shows that implanted hydrogen also decorates VG, defects in undoped and n-GaN

Long-range Angular Correlations On The Near And Away Side In P-pb Collisions At √snn=5.02 Tev

7191/Mar294

Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 ?m Region

Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission from silicon in extending the silicon technology into fully integrated optoelectronic circuits. Here, we report the realization of room-temperature stimulated emission in the technologically crucial 1.5 ?m wavelength range from Er-doped GaN multiple-quantum wells on silicon and sapphire. Employing the well-acknowledged variable stripe technique, we have demonstrated an optical gain up to 170 cm-1 in the multiple-quantum well structures. The observation of the stimulated emission is accompanied by the characteristic threshold behavior of emission intensity as a function of pump fluence, spectral line width narrowing, and excitation length. The demonstration of room-temperature lasing at the minimum loss window of optical fibers and in the eye-safe wavelength region of 1.5 ?m are highly sought after for use in many applications including defense, industrial processing, communication, medicine, spectroscopy, and imaging. As the synthesis of Er-doped GaN epitaxial layers on silicon and sapphire has been successfully demonstrated, the results laid the foundation for achieving hybrid GaN-Si lasers, providing a new pathway toward full photonic integration for silicon optoelectronics. - 2018 American Chemical Society.N.Q.V. acknowledges the support from NSF (ECCS-1358564). The materials growth effort at TTU was supported by JTO/ ARO (W911NF-12-1-0330)