Ultrafast single electron spin manipulation in 2D semiconductor quantum dots with optimally controlled time-dependent electric fields through spin-orbit coupling

We have studied theoretically the possibility of ultra-fast manipulation of a single electron spin in 2D semiconductor quantum dots, by means of high-frequency time-dependent electric fields. The electron spin degree of freedom is excited through spin-orbit coupling, and the procedure may be enhanced by the presence of a static magnetic field. We use quantum optimal control theory to tailor the temporal profile of the electric field in order to achieve the most effective manipulation. The scheme predicts significant control over spin operations in times of the order of picoseconds – an ultrafast time scale that permits to avoid the effects of decoherence if this scheme is to be used as a tool for quantum information processing

Shaped electric fields for fast optimal manipulation of electron spin and position in a double quantum dot

We use quantum optimal control theory algorithms to design external electric fields that drive the coupled spin and orbital dynamics of an electron in a double quantum dot, subject to the spin-orbit coupling and Zeeman magnetic fields. We obtain time profiles of multifrequency electric field pulses which increase the rate of spin-flip transitions by several orders of magnitude in comparison with monochromatic fields, where the spin Rabi oscillations were predicted to be very slow. This precise (with fidelity higher than 1×10-4) and fast (at the time scale of the order of 0.1 ns, comparable with the Zeeman spin rotation and the interdot tunneling time) simultaneous control of the spin and position is achieved while keeping the electron in the four lowest tunneling- and Zeeman-split levels through the duration of the pulse. The proposed algorithms suggest effective applications in spintronics and quantum information devices

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field

The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30% reduction of the internal electric field and gives a better account of the observed optical features

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field

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