Multiphonon Raman Scattering in Graphene

We report multiphonon Raman scattering in graphene samples. Higher order combination modes involving 3 phonons and 4 phonons are observed in single-layer (SLG), bi-layer (BLG), and few layer (FLG) graphene samples prepared by mechanical exfoliation. The intensity of the higher order phonon modes (relative to the G peak) is highest in SLG and decreases with increasing layers. In addition, all higher order modes are observed to upshift in frequency almost linearly with increasing graphene layers, betraying the underlying interlayer van der Waals interactions.Comment: Accepted for publication in Phys. Rev.

Hooge's Constant of Carbon Nanotube Field Effect Transistors

The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is substantially degreased by exposing the devices to air

Building Fuzzy Elevation Maps from a Ground-based 3D Laser Scan for Outdoor Mobile Robots

Mandow, A; Cantador, T.J.; Reina, A.J.; Martínez, J.L.; Morales, J.; García-Cerezo, A. "Building Fuzzy Elevation Maps from a Ground-based 3D Laser Scan for Outdoor Mobile Robots," Robot2015: Second Iberian Robotics Conference, Advances in Robotics, (2016) Advances in Intelligent Systems and Computing, vol. 418. This is a self-archiving copy of the author’s accepted manuscript. The final publication is available at Springer via http://link.springer.com/book/10.1007/978-3-319-27149-1.The paper addresses terrain modeling for mobile robots with fuzzy elevation maps by improving computational speed and performance over previous work on fuzzy terrain identification from a three-dimensional (3D) scan. To this end, spherical sub-sampling of the raw scan is proposed to select training data that does not filter out salient obstacles. Besides, rule structure is systematically defined by considering triangular sets with an unevenly distributed standard fuzzy partition and zero order Sugeno-type consequents. This structure, which favors a faster training time and reduces the number of rule parameters, also serves to compute a fuzzy reliability mask for the continuous fuzzy surface. The paper offers a case study using a Hokuyo-based 3D rangefinder to model terrain with and without outstanding obstacles. Performance regarding error and model size is compared favorably with respect to a solution that uses quadric-based surface simplification (QSlim).This work was partially supported by the Spanish CICYT project DPI 2011-22443, the Andalusian project PE-2010 TEP-6101, and Universidad de Málaga-Andalucía Tech

Atomic Structure of Graphene on SiO2

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution STM images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically-clean graphene sheets.Comment: 13 pages, 4 figure

Diffusive Charge Transport in Graphene on SiO2

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates [1]; increased dielectric screening reduces scattering from charged impurities, but increases scattering from short-range scatterers [2]. We evaluate the effects of the corrugations (ripples) of graphene on SiO2 on transport by measuring the height-height correlation function. The results show that the corrugations cannot mimic long-range (charged impurity) scattering effects, and have too small an amplitude-to-wavelength ratio to significantly affect the observed mobility via short-range scattering [3, 4]. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a resistivity linear in temperature and independent of carrier density [5]; at higher temperatures, polar optical phonons of the SiO2 substrate give rise to an activated, carrier density-dependent resistivity [5]. Together the results paint a complete picture of charge carrier transport in graphene on SiO2 in the diffusive regime.Comment: 28 pages, 7 figures, submitted to Graphene Week proceeding