Stacking-order dependent transport properties of trilayer graphene

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of \nu = 2, 4, 6... with a step of \Delta \nu = 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at \nu = 6 and 10 with 4-fold spin and valley degeneracy.Comment: 4 pages, 4 figure

A valley-spin qubit in a carbon nanotube

Although electron spins in III-V semiconductor quantum dots have shown great promise as qubits, a major challenge is the unavoidable hyperfine decoherence in these materials. In group IV semiconductors, the dominant nuclear species are spinless, allowing for qubit coherence times that have been extended up to seconds in diamond and silicon. Carbon nanotubes are a particularly attractive host material, because the spin-orbit interaction with the valley degree of freedom allows for electrical manipulation of the qubit. In this work, we realise such a qubit in a nanotube double quantum dot. The qubit is encoded in two valley-spin states, with coherent manipulation via electrically driven spin resonance (EDSR) mediated by a bend in the nanotube. Readout is performed by measuring the current in Pauli blockade. Arbitrary qubit rotations are demonstrated, and the coherence time is measured via Hahn echo. Although the measured decoherence time is only 65 ns in our current device, this work offers the possibility of creating a qubit for which hyperfine interaction can be virtually eliminated

Determination of energy-dependent neutron backgrounds using shadow bars

Understanding the neutron background is essential for determining the neutron yield from nuclear reactions. In the analysis presented here, the shadow bars are placed in front of neutron detectors to determine the energy dependent neutron background fractions. The measurement of neutron spectra with and without shadow bars is important to determine the neutron background more accurately. The neutron background, along with its sources and systematic uncertainties, are explored with a focus on the impact of background models and their dependence on neutron energy.Comment: 7 pages, 10 figure

Depth Profiling Photoelectron-Spectroscopic Study of an Organic Spin Valve with a Plasma-Modified Pentacene Spacer

[[abstract]]We report an enhanced magnetoresistance (MR) in an organic spin valve with an oxygen plasma-treated pentacene (PC) spacer. The spin valve containing PC without the treatment shows no MR effect, whereas those with moderately plasma-treated PC exhibit MR ratios up to 1.64% at room temperature. X-ray photoelectron spectroscopy with depth profiling is utilized to characterize the interfacial electronic properties of the plasma-treated PC spacer which shows the formation of a derivative oxide layer. The results suggest an alternative approach to improve the interface quality and in turn to enhance the MR performance in organic spin valves.[[incitationindex]]SCI[[booktype]]電子

Nano-Architecture of nitrogen-doped graphene films synthesized from a solid CN source

New synthesis routes to tailor graphene properties by controlling the concentration and chemical configuration of dopants show great promise. Herein we report the direct reproducible synthesis of 2-3% nitrogen-doped ‘few-layer’ graphene from a solid state nitrogen carbide a-C:N source synthesized by femtosecond pulsed laser ablation. Analytical investigations, including synchrotron facilities, made it possible to identify the configuration and chemistry of the nitrogen-doped graphene films. Auger mapping successfully quantified the 2D distribution of the number of graphene layers over the surface, and hence offers a new original way to probe the architecture of graphene sheets. The films mainly consist in a Bernal ABA stacking three-layer architecture, with a layer number distribution ranging from 2 to 6. Nitrogen doping affects the charge carrier distribution but has no significant effects on the number of lattice defects or disorders, compared to undoped graphene synthetized in similar conditions. Pyridinic, quaternary and pyrrolic nitrogen are the dominant chemical configurations, pyridinic N being preponderant at the scale of the film architecture. This work opens highly promising perspectives for the development of self-organized nitrogen-doped graphene materials, as synthetized from solid carbon nitride, with various functionalities, and for the characterization of 2D materials using a significant new methodology

Deep Eutectic Solvents (DESs) and their applications [forthcoming]

Deep Eutectic Solvents (DESs) and Their Application