K voproszu ob obscsefakticseszkom znacsenii neszovepsennogo vida

This study discusses the general-factual meaning of the word's past tense which can be considered as one of the basic meanings of the imperfective aspect in Russian. In the first part, the author turns the reader's attention to the types of the general-factual meaning in relation to resultativity and to single or repeated action. Furthermore, he points out the synchronical characteristics of this meaning. The second part is devoted to the analysis of aspectual competition, i.e. synonimical usage of the general-factual meaning of the imperfective aspect and concrete-factual meaning of the perfective aspect

Karl Polanyi in Budapest: On his political and intellectual formation

Copyright © Archives Européennes de Sociologie 2009.A major thinker and inspiring teacher, Karl Polanyi's contributions have long been influential in a variety of disciplines, notably economic sociology and economic history. Two of his innovations, substantivist economic anthropology and the “double movement thesis,” are recognized as seminal. All of the works for which he is known, however, were written late in life, when in exile, and very little is known of his Hungarian writings, virtually none of which had, until now, been translated. Despite his fame, the biographical literature on Polanyi remains modest: some studies provide invaluable insights, yet all are brief. This article attempts to make some headway in remedying these lacunae. It sketches the contours of that extraordinary historical-geographical conjuncture in which he was formed, and explores his intellectual and political engagements in the Galilei Circle and the Radical Bourgeois Party. It seeks in particular to elucidate the complex roles played by questions of nation, ethnicity and class in the life of the young Karl Polanyi

Si nanocrystals in sandwiched SiNx structures

The structure and composition of multilayered SiNx structures prepared by low pressure chemical vapour deposition were studied by cross-sectional transmission electron microscopy and spectroscopic ellipsometry. Using appropriate deposition parameters and post deposition annealing, well separated Si nanocrystals were obtained with avarage grain size of 8-10 nm