Determination of Yield and Yield Components of Vetch and Cereal Mixture and Evaluation Using by GGE-Biplot Analysis

This study was carried out to determine forage and seed yield and its effecting component in different vetch and cereal mixtures, ecological condition of Tekirdağ-Thrace region of Turkey. The study was conducted using a total 5 vetch and cereals varieties includes three different vetch species orakefe, Hungarian vetch species sarıefe, narbon vetch candidate variety 570, two different cereals (barley variety scarpia, oat variety sebat) and their mixture combinations, each species were sown as sole, double and triple mixtures (8 combinations for each genotype) a randomized complete block design with 3 replications was laid out on 2013-2015 growing season. Eight mixture combinations for each genotype (common vetch, Hungarian vetch, Narbon vetch, barley and oat) were evaluated for yield and major plant structural characteristics. Genotype-Trait (GT) biplot analyses were used. Applying type of analyses to the multiple trait data revealed that GT biplot graphically displayed the interrelationships among traits and facilitated visual comparison of mixtures and selection for each genotype. Wide variation was observed for traits plant structure and components (plant height, branch number and pod number/plant, 1000 seed weight, individual genotype ratio). It was found that; seed yield, 1000 seed weight, plant height, branch and pod number /plant were the highest value in pure stand NV570. In addition (570+sebat) had maximum dry forage yield, sarıefe as pure stand has the maximum plant height and seed yield value. On the other had sarıefe+scarpia combination showed very high value for pod number/plant, branch number/plant and fresh and dry forage yield. Pure stand scarpia was the best performer in seed yield. CV+NV+scarpia had the highest 1000 seed weight, fresh and dry forage yield. Maximum planth height was determined from sebat+scarpia, CV+O+B and CV+HV+B combinations. Favorable seed yield and 1000 seed weight value was produced under pure stand sebat seeding. Intercrop NV570+O combination had the higher fresh and dry forage yield. CV+HV+O, CV+NV+O and CV+B+O combination had the highest plant height of sebat

Memristive behavior in a junctionless flash memory cell

We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented device mode, which we refer to as the flashristor mode, potentially allows greater control over the memristive properties, allowing rational design. The mode is demonstrated using a depletion type n-channel ZnO transistor grown by atomic layer deposition (ALD), with HfO2 as the tunnel dielectric, Al2O3 as the control dielectric, and non-stoichiometric silicon nitride as the charge storage layer. The device exhibits the pinched hysteresis of a memristor and in the unoptimized device, Roff/Ron ratios of about 3 are presented with low operating voltages below 5 V. A simplified model predicts Roff/Ron ratios can be improved significantly by adjusting the native threshold voltage of the devices. The repeatability of the resistive switching is excellent and devices exhibit 106s retention time, which can, in principle, be improved by engineering the gate stack and storage layer properties. The flashristor mode can find use in analog information processing applications, such as neuromorphic computing, where well-behaving and highly repeatable memristive properties are desirable. © 2015 AIP Publishing LLC

Geoeconomic variations in epidemiology, ventilation management, and outcomes in invasively ventilated intensive care unit patients without acute respiratory distress syndrome: a pooled analysis of four observational studies

Background: Geoeconomic variations in epidemiology, the practice of ventilation, and outcome in invasively ventilated intensive care unit (ICU) patients without acute respiratory distress syndrome (ARDS) remain unexplored. In this analysis we aim to address these gaps using individual patient data of four large observational studies. Methods: In this pooled analysis we harmonised individual patient data from the ERICC, LUNG SAFE, PRoVENT, and PRoVENT-iMiC prospective observational studies, which were conducted from June, 2011, to December, 2018, in 534 ICUs in 54 countries. We used the 2016 World Bank classification to define two geoeconomic regions: middle-income countries (MICs) and high-income countries (HICs). ARDS was defined according to the Berlin criteria. Descriptive statistics were used to compare patients in MICs versus HICs. The primary outcome was the use of low tidal volume ventilation (LTVV) for the first 3 days of mechanical ventilation. Secondary outcomes were key ventilation parameters (tidal volume size, positive end-expiratory pressure, fraction of inspired oxygen, peak pressure, plateau pressure, driving pressure, and respiratory rate), patient characteristics, the risk for and actual development of acute respiratory distress syndrome after the first day of ventilation, duration of ventilation, ICU length of stay, and ICU mortality. Findings: Of the 7608 patients included in the original studies, this analysis included 3852 patients without ARDS, of whom 2345 were from MICs and 1507 were from HICs. Patients in MICs were younger, shorter and with a slightly lower body-mass index, more often had diabetes and active cancer, but less often chronic obstructive pulmonary disease and heart failure than patients from HICs. Sequential organ failure assessment scores were similar in MICs and HICs. Use of LTVV in MICs and HICs was comparable (42\ub74% vs 44\ub72%; absolute difference \u20131\ub769 [\u20139\ub758 to 6\ub711] p=0\ub767; data available in 3174 [82%] of 3852 patients). The median applied positive end expiratory pressure was lower in MICs than in HICs (5 [IQR 5\u20138] vs 6 [5\u20138] cm H2O; p=0\ub70011). ICU mortality was higher in MICs than in HICs (30\ub75% vs 19\ub79%; p=0\ub70004; adjusted effect 16\ub741% [95% CI 9\ub752\u201323\ub752]; p<0\ub70001) and was inversely associated with gross domestic product (adjusted odds ratio for a US$10 000 increase per capita 0\ub780 [95% CI 0\ub775\u20130\ub786]; p<0\ub70001). Interpretation: Despite similar disease severity and ventilation management, ICU mortality in patients without ARDS is higher in MICs than in HICs, with a strong association with country-level economic status. Funding: No funding

EPIdemiology of Surgery-Associated Acute Kidney Injury (EPIS-AKI) : Study protocol for a multicentre, observational trial

More than 300 million surgical procedures are performed each year. Acute kidney injury (AKI) is a common complication after major surgery and is associated with adverse short-term and long-term outcomes. However, there is a large variation in the incidence of reported AKI rates. The establishment of an accurate epidemiology of surgery-associated AKI is important for healthcare policy, quality initiatives, clinical trials, as well as for improving guidelines. The objective of the Epidemiology of Surgery-associated Acute Kidney Injury (EPIS-AKI) trial is to prospectively evaluate the epidemiology of AKI after major surgery using the latest Kidney Disease: Improving Global Outcomes (KDIGO) consensus definition of AKI. EPIS-AKI is an international prospective, observational, multicentre cohort study including 10 000 patients undergoing major surgery who are subsequently admitted to the ICU or a similar high dependency unit. The primary endpoint is the incidence of AKI within 72 hours after surgery according to the KDIGO criteria. Secondary endpoints include use of renal replacement therapy (RRT), mortality during ICU and hospital stay, length of ICU and hospital stay and major adverse kidney events (combined endpoint consisting of persistent renal dysfunction, RRT and mortality) at day 90. Further, we will evaluate preoperative and intraoperative risk factors affecting the incidence of postoperative AKI. In an add-on analysis, we will assess urinary biomarkers for early detection of AKI. EPIS-AKI has been approved by the leading Ethics Committee of the Medical Council North Rhine-Westphalia, of the Westphalian Wilhelms-University Münster and the corresponding Ethics Committee at each participating site. Results will be disseminated widely and published in peer-reviewed journals, presented at conferences and used to design further AKI-related trials. Trial registration number NCT04165369

The Analysis of the Electrical and Photovoltaic Properties of Cr/p-Si Structures Using Current-Voltage Measurements

In this work, the electrical and photovoltaic properties of Cr/p -Si structures were investigated using forward and reverse bias current-voltage (I - V) measurements in dark and under illumination conditions (100 mW/cm2) at room temperature. The forward and reverse bias current–voltage (I - V) characteristics of the Cr/p-Si structures were analyzed by the thermionic emission theory. For this, the main parameters such as ideality factors (n), barrier heights (?bo), series resistances (RS), and reverse-saturation currents obtained from different methods using forward and reverse bias I - V measurements were investigated in under dark and illumination conditions at room temperature, respectively. Furthermore, the photovoltaic parameters such as short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency (?P) were acquired as 7.43 × 10-3 A/cm2, 0.260 V, 61.5% and 1.18% under 100 mW/cm2 light intensity, respectively, and these values are near to a photodiode. Experimental results show that all electrical parameters were found to be strong function of illumination density. Also, this result confirms that Cr/p-type-Si diode can be used as a photodiode in optoelectronic applications. © 2018, Springer Science+Business Media B.V., part of Springer Nature

Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion

Owing to importance of ZnO in electronics, Au/ZnO/n-type Si device was fabricated to investigate its dielectric properties by aid of capacitance-conductance-voltage measurements. While the ZnO thin film layer on the n-type Si was formed by atomic layer deposition (ALD) technique, the rectifying and ohmic contacts were obtained by thermal evaporation. The surface morphology of ZnO thin film was characterized using atomic force microscopy (AFM) to show its compatibility as interfacial layer in the Au/ZnO/n-type Si device. The dielectric properties of the device were examined in terms of dielectric parameters such as dielectric constant (?'), dielectric loss (?¨), loss tangent (tan ?), the real and imaginary parts of electric modulus (M ' and M ¨) and ac electrical conductivity (?) depending on applied voltages (from -1 to 2 V) and temperatures (from 140 K to 360 K) ranges. The results have revealed that interfacial polarization and charge carriers are the important parameters to affect the dielectric properties of the device with changing temperature. The device can be used at wide range temperatures for diode applications. © 2018 IOP Publishing Ltd

Frequency-Dependent Electrical Characterization of GO-SiO2 Composites in a Schottky Device

An Al/GO-SiO2/p-Si device was obtained via the spin coating technique for the GO-SiO2 interfacial composite layer, and the thermal evaporation technique was employed for Al contacts. The device was subsequently analyzed via impedance spectroscopy for on a wide range of frequency (from 10 kHz to 5 MHz) and voltage (± 1 V) at room temperature. Main electrical parameters including barrier height, series resistance, doping concentration and interface states of the device were calculated using C–V and G–V characteristics. According to the C–V and G–V characteristics, the main electrical parameters were affected by the series resistance and interface states. The device exhibited negative capacitances, and the capacitance and conductance values were found to be a strong function of the frequency and voltage. The Al/GO-SiO2/p-Si device was also characterized via dielectric characterization. The profiles of ?',?¨ tan ?, M'M¨ and ? in relation to frequency and voltage were plotted and are discussed in details. All the dielectric parameters were found to be a strong function of frequency and voltage, and the interface states were more effective at low frequencies for this device. Instead of using only a SiO2 layer in the interface, a GO-SiO2 composite structure can be used as a new material for more effective metal–oxide–semiconductor (MOS) devices. © 2018, The Minerals, Metals & Materials Society

The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique

The ZnO layer onto n-Si has been formed by atomic layer deposition technique. A final film thickness of 10 nm has been obtained by the resulting ZnO film growth rate of about 1.45 Å per cycle. The crystal structures of the ZnO layer were acquired by X-ray diffractometer (XRD) and it could be seen ZnO peaks from XRD patterns. The surface of ZnO thin film onto the n-Si could be seen with Atomic Force Microscopy (AFM) images and it were obtained homogenous and smooth surface. The I-V measurements were performed -2V to +2 V under dark and light, C-V measurements were performed changing 10 kHz to 2 MHz frequency and -2 V to +2 V bias voltage at room temperature. The device has the saturation current value of 8.99 × 10-9A. The values of ideality factor (n) and the barrier height (?b) have been found to be 2.49 and 0.77 eV by using the thermionic emission theory, respectively. In addition, the barrier height ?band the series resistance (Rs) have been also acquired from Cheung's functions. The photovoltaic parameters of device; short circuit current (Isc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency (?) were taken as 342 mV, 34.7 µA, 32% and 0.48% under 100 mW/cm2light intensity, respectively. The C–V and G–V plots of device almost have peaks in all frequencies except for 2 MHz frequency. The device also behaved like memristor at 500 kHz dual C–V measurements under dark and light but has not wide memory window. It has been concluded that the device can be used as photodiode at room temperature because of small saturation current and good rectifying behavior and it may be improved photovoltaic, capacitor and memristor properties of Au/ZnO/n-Si device in the future. © 2016 Elsevier B.V