6,175 research outputs found
Raman transitions between hyperfine clock states in a magnetic trap
We present our experimental investigation of an optical Raman transition
between the magnetic clock states of Rb in an atom chip magnetic trap.
The transfer of atomic population is induced by a pair of diode lasers which
couple the two clock states off-resonantly to an intermediate state manifold.
This transition is subject to destructive interference of two excitation paths,
which leads to a reduction of the effective two-photon Rabi-frequency.
Furthermore, we find that the transition frequency is highly sensitive to the
intensity ratio of the diode lasers. Our results are well described in terms of
light shifts in the multi-level structure of Rb. The differential light
shifts vanish at an optimal intensity ratio, which we observe as a narrowing of
the transition linewidth. We also observe the temporal dynamics of the
population transfer and find good agreement with a model based on the system's
master equation and a Gaussian laser beam profile. Finally, we identify several
sources of decoherence in our system, and discuss possible improvements.Comment: 10 pages, 7 figure
Domain structure of epitaxial Co films with perpendicular anisotropy
Epitaxial hcp Cobalt films with pronounced c-axis texture have been prepared
by pulsed lased deposition (PLD) either directly onto Al2O3 (0001) single
crystal substrates or with an intermediate Ruthenium buffer layer. The crystal
structure and epitaxial growth relation was studied by XRD, pole figure
measurements and reciprocal space mapping. Detailed VSM analysis shows that the
perpendicular anisotropy of these highly textured Co films reaches the
magnetocrystalline anisotropy of hcp-Co single crystal material. Films were
prepared with thickness t of 20 nm < t < 100 nm to study the crossover from
in-plane magnetization to out-of-plane magnetization in detail. The analysis of
the periodic domain pattern observed by magnetic force microscopy allows to
determine the critical minimum thickness below which the domains adopt a pure
in-plane orientation. Above the critical thickness the width of the stripe
domains is evaluated as a function of the film thickness and compared with
domain theory. Especially the discrepancies at smallest film thicknesses show
that the system is in an intermediate state between in-plane and out-of-plane
domains, which is not described by existing analytical domain models
Sawja: Static Analysis Workshop for Java
Static analysis is a powerful technique for automatic verification of
programs but raises major engineering challenges when developing a full-fledged
analyzer for a realistic language such as Java. This paper describes the Sawja
library: a static analysis framework fully compliant with Java 6 which provides
OCaml modules for efficiently manipulating Java bytecode programs. We present
the main features of the library, including (i) efficient functional
data-structures for representing program with implicit sharing and lazy
parsing, (ii) an intermediate stack-less representation, and (iii) fast
computation and manipulation of complete programs
OPERATIONAL COSTS OF CANAL COMPANIES AND IRRIGATION DISTRICTS IN THE INTERMOUNTAIN REGION
This study reports on the trends of operational costs of farmer owned and operated irrigation enterprises (irrigation districts and canal companies) in five intermountain states. Administrative costs have risen faster then operation and maintenance costs. While salaries of employees have not risen significantly over time, legal costs have greatly escalated.Agribusiness,
Dynamic hysteresis from zigzag domain walls
We investigate dynamic hysteresis in ferromagnetic thin films with zigzag
domain walls. We introduce a discrete model describing the motion of a wall in
a disordered ferromagnet with in-plane magnetization, driven by an external
magnetic field, considering the effects of dipolar interactions and anisotropy.
We analyze the effects of external field frequency and temperature on the
coercive field by Monte Carlo simulations, and find a good agreement with the
experimental data reported in literature for Fe/GaAs films. This implies that
dynamic hysteresis in this case can be explained by a single propagating domain
wall model without invoking domain nucleation.Comment: 10 pages, 13 figures; minor modifications and two figures adde
Rotating vortex dipoles in ferromagnets
Vortex-antivortex pairs are localized excitations and have been found to be
spontaneously created in magnetic elements. In the case that the vortex and the
antivortex have opposite polarities the pair has a nonzero topological charge,
and it behaves as a rotating vortex dipole. We find theoretically, and confirm
numerically, the form of the energy as a function of the angular momentum of
the system and the associated rotation frequencies. We discuss the process of
annihilation of the pair which changes the topological charge of the system by
unity while its energy is monotonically decreasing. Such a change in the
topological charge affects profoundly the dynamics in the magnetic system. We
finally discuss the connection of our results with Bloch Points (BP) and the
implications for BP dynamics.Comment: 6 pages, 2 figure
Magnetostrictive hysteresis of TbCo/CoFe multilayers and magnetic domains
Magnetic and magnetostrictive hysteresis loops of TbCo/CoFe multilayers under
field applied along the hard magnetization axis are studied using vectorial
magnetization measurements, optical deflectometry and magneto optical Kerr
microscopy. Even a very small angle misalignment between hard axis and magnetic
field direction is shown to drastically change the shape of magnetization and
magnetostrictive torsion hysteresis loops. Two kinds of magnetic domains are
revealed during the magnetization: big regions with opposite rotation of
spontaneous magnetization vector and spontaneous magnetic domains which appear
in a narrow field interval and provide an inversion of this rotation.
We show that the details of the hysteresis loops of our exchange-coupled
films can be described using the classical model of homogeneous magnetization
rotation of single uniaxial films and the configuration of observed domains.
The understanding of these features is crucial for applications (for MEMS or
microactuators) which benefit from the greatly enhanced sensitivity near the
point of magnetic saturation at the transverse applied field.Comment: 10 pages, 11 figure
Magnetic patterning of (Ga,Mn)As by hydrogen passivation
We present an original method to magnetically pattern thin layers of
(Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the
hole density, and thereby locally suppress the carrier-mediated ferromagnetic
phase. The sample surface is thus maintained continuous, and the minimal
structure size is of about 200 nm. In micron-sized ferromagnetic dots
fabricated by hydrogen passivation on perpendicularly magnetized layers, the
switching fields can be maintained closer to the continuous film coercivity,
compared to dots made by usual dry etch techniques
Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy
anisotropy axis is investigated by means of several techniques, that yield a
consistent set of data on the magnetic properties and the domain structure of
this diluted ferromagnetic semiconductor. The magnetic layer was grown under
tensile strain on a relaxed GaInAs buffer layer using a procedure that limits
the density of threading dislocations. Magnetometry, magneto-transport and
polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality
of this layer, in particular through its high Curie temperature (130 K) and
well-defined magnetic anisotropy. We show that magnetization reversal is
initiated from a limited number of nucleation centers and develops by easy
domain wall propagation. Furthermore, MOKE microscopy allowed us to
characterize in detail the magnetic domain structure. In particular we show
that domain shape and wall motion are very sensitive to some defects, which
prevents a periodic arrangement of the domains. We ascribed these defects to
threading dislocations emerging in the magnetic layer, inherent to the growth
mode on a relaxed buffer
Influence of topography and Co domain walls on the magnetization reversal of the FeNi layer in FeNi/AlO/Co magnetic tunnel junctions
We have studied the magnetization reversal dynamics of FeNi/AlO/Co
magnetic tunnel junctions deposited on step-bunched Si substrates using
magneto-optical Kerr effect and time-resolved x-ray photoelectron emission
microscopy combined with x-ray magnetic circular dichroism (XMCD-PEEM).
Different reversal mechanisms have been found depending on the substrate miscut
angle. Larger terraces (smaller miscut angles) lead to a higher nucleation
density and stronger domain wall pinning. The width of domain walls with
respect to the size of the terraces seems to play an important role in the
reversal. We used the element selectivity of XMCD-PEEM to reveal the strong
influence of the stray field of domain walls in the hard magnetic layer on the
magnetic switching of the soft magnetic layer.Comment: 8 Pages, 7 Figure
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