Raman transitions between hyperfine clock states in a magnetic trap

We present our experimental investigation of an optical Raman transition between the magnetic clock states of $^{87}$Rb in an atom chip magnetic trap. The transfer of atomic population is induced by a pair of diode lasers which couple the two clock states off-resonantly to an intermediate state manifold. This transition is subject to destructive interference of two excitation paths, which leads to a reduction of the effective two-photon Rabi-frequency. Furthermore, we find that the transition frequency is highly sensitive to the intensity ratio of the diode lasers. Our results are well described in terms of light shifts in the multi-level structure of $^{87}$Rb. The differential light shifts vanish at an optimal intensity ratio, which we observe as a narrowing of the transition linewidth. We also observe the temporal dynamics of the population transfer and find good agreement with a model based on the system's master equation and a Gaussian laser beam profile. Finally, we identify several sources of decoherence in our system, and discuss possible improvements.Comment: 10 pages, 7 figure

Domain structure of epitaxial Co films with perpendicular anisotropy

Epitaxial hcp Cobalt films with pronounced c-axis texture have been prepared by pulsed lased deposition (PLD) either directly onto Al2O3 (0001) single crystal substrates or with an intermediate Ruthenium buffer layer. The crystal structure and epitaxial growth relation was studied by XRD, pole figure measurements and reciprocal space mapping. Detailed VSM analysis shows that the perpendicular anisotropy of these highly textured Co films reaches the magnetocrystalline anisotropy of hcp-Co single crystal material. Films were prepared with thickness t of 20 nm < t < 100 nm to study the crossover from in-plane magnetization to out-of-plane magnetization in detail. The analysis of the periodic domain pattern observed by magnetic force microscopy allows to determine the critical minimum thickness below which the domains adopt a pure in-plane orientation. Above the critical thickness the width of the stripe domains is evaluated as a function of the film thickness and compared with domain theory. Especially the discrepancies at smallest film thicknesses show that the system is in an intermediate state between in-plane and out-of-plane domains, which is not described by existing analytical domain models

Sawja: Static Analysis Workshop for Java

Static analysis is a powerful technique for automatic verification of programs but raises major engineering challenges when developing a full-fledged analyzer for a realistic language such as Java. This paper describes the Sawja library: a static analysis framework fully compliant with Java 6 which provides OCaml modules for efficiently manipulating Java bytecode programs. We present the main features of the library, including (i) efficient functional data-structures for representing program with implicit sharing and lazy parsing, (ii) an intermediate stack-less representation, and (iii) fast computation and manipulation of complete programs

Dynamic hysteresis from zigzag domain walls

We investigate dynamic hysteresis in ferromagnetic thin films with zigzag domain walls. We introduce a discrete model describing the motion of a wall in a disordered ferromagnet with in-plane magnetization, driven by an external magnetic field, considering the effects of dipolar interactions and anisotropy. We analyze the effects of external field frequency and temperature on the coercive field by Monte Carlo simulations, and find a good agreement with the experimental data reported in literature for Fe/GaAs films. This implies that dynamic hysteresis in this case can be explained by a single propagating domain wall model without invoking domain nucleation.Comment: 10 pages, 13 figures; minor modifications and two figures adde

Rotating vortex dipoles in ferromagnets

Vortex-antivortex pairs are localized excitations and have been found to be spontaneously created in magnetic elements. In the case that the vortex and the antivortex have opposite polarities the pair has a nonzero topological charge, and it behaves as a rotating vortex dipole. We find theoretically, and confirm numerically, the form of the energy as a function of the angular momentum of the system and the associated rotation frequencies. We discuss the process of annihilation of the pair which changes the topological charge of the system by unity while its energy is monotonically decreasing. Such a change in the topological charge affects profoundly the dynamics in the magnetic system. We finally discuss the connection of our results with Bloch Points (BP) and the implications for BP dynamics.Comment: 6 pages, 2 figure

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer

Influence of topography and Co domain walls on the magnetization reversal of the FeNi layer in FeNi/Al_2\_2O_3\_3/Co magnetic tunnel junctions

We have studied the magnetization reversal dynamics of FeNi/Al$\_2$O$\_3$/Co magnetic tunnel junctions deposited on step-bunched Si substrates using magneto-optical Kerr effect and time-resolved x-ray photoelectron emission microscopy combined with x-ray magnetic circular dichroism (XMCD-PEEM). Different reversal mechanisms have been found depending on the substrate miscut angle. Larger terraces (smaller miscut angles) lead to a higher nucleation density and stronger domain wall pinning. The width of domain walls with respect to the size of the terraces seems to play an important role in the reversal. We used the element selectivity of XMCD-PEEM to reveal the strong influence of the stray field of domain walls in the hard magnetic layer on the magnetic switching of the soft magnetic layer.Comment: 8 Pages, 7 Figure

Spatially resolved observation of uniform precession modes in spin-valve systems

Using time-resolved photoemission electron microscopy the excitation of uniform precession modes in individual domains of a weakly coupled spin-valve system has been studied. A coupling dependence of the precession frequencies has been found that can be reasonably well understood on the basis of a macrospin model. By tuning the frequency of the excitation source the uniform precession modes are excited in a resonant way.Comment: This article has been accepted by Journal of Applied Physics. After it is published, it will be found at http://jap.aip.or

Domain evolution of BaTiO3 ultrathin films under electric field: a first-principles study

A first-principles-derived method is used to study the morphology and electric-field-induced evolution of stripe nanodomains in (001) BaTiO3 (BTO) ultrathin films, and to compare them with those in (001) Pb(Zr,Ti)O3 (PZT) ultrathin films. The BaTiO3 systems exhibit 180o periodic stripe domains at null electric field, as in PZT ultrathin films. However, the stripes alternate along [1-10] in BTO systems versus [010] in PZT systems, and no in-plane surface dipoles occur in BTO ultrathin films (unlike in PZT materials). Moreover, the evolution of the 180o stripe domains in the BaTiO3 systems, when applying and increasing an electric field along [001], involves four regions: Region I for which the magnitude of the down dipoles (i.e., those that are antiparallel to the electric field) is reduced, while the domain walls do not move; Region II in which some local down dipoles adjacent to domain walls switch their direction, resulting in zigzagged domain walls - with the overall stripe periodicity being unchanged; Region III in which nanobubbles are created, then contract along [110] and finally collapse; and Region IV which is associated with a single monodomain. Such evolution differs from that of PZT ultrathin films for which neither Region I nor zigzagged domain walls exist, and for which the bubbles contract along [100]. Discussion about such differences is provided.Comment: 19 pages, 4 figures, 27 references, submitted to Phys. Rev.