How sensitive is a neutrino factory to the angle θ13\theta_{13}?

We consider the impact of non-standard interactions of neutrinos (NSI) on the determination of neutrino mixing parameters at a neutrino factory using \pnu{e}\to\pnu{\mu} ``golden channels'' for the measurement of $\theta_{13}$. We show how a small residual NSI leads to a drastic loss in sensitivity in $\theta_{13}$, of up to two orders of magnitude. This can be somewhat overcome if two baselines are combined.Comment: 4 pages, 3 figure

Coherent pumping of a Mott insulator: Fermi golden rule versus Rabi oscillations

Cold atoms provide a unique arena to study many-body systems far from equilibrium. Furthermore, novel phases in cold atom systems are conveniently investigated by dynamical probes pushing the system out of equilibrium. Here, we discuss the pumping of doubly-occupied sites in a fermionic Mott insulator by a periodic modulation of the hopping amplitude. We show that deep in the insulating phase the many-body system can be mapped onto an effective two-level system which performs coherent Rabi oscillations due to the driving. Coupling the two-level system to the remaining degrees of freedom renders the Rabi oscillations damped. We compare this scheme to an alternative description where the particles are incoherently pumped into a broad continuum.Comment: 4 pages, 3 figure

Investigation of high efficiency GaAs solar cells

Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies

Electro-optical characterization of GaAs solar cells

The electro-optical characterization of gallium arsenide p/n solar cells is discussed. The objective is to identify and understand basic mechanisms which limit the performance of high efficiency gallium arsenide solar cells. The approach involves conducting photoresponse and temperature dependent current-voltage measurements, and interpretation of the data in terms of theory to determine key device parameters. Depth concentration profiles are also utilized in formulating a model to explain device performance

Real-time observation of interfering crystal electrons in high-harmonic generation

Accelerating and colliding particles has been a key strategy to explore the texture of matter. Strong lightwaves can control and recollide electronic wavepackets, generating high-harmonic (HH) radiation which encodes the structure and dynamics of atoms and molecules and lays the foundations of attosecond science. The recent discovery of HH generation in bulk solids combines the idea of ultrafast acceleration with complex condensed matter systems and sparks hope for compact solid-state attosecond sources and electronics at optical frequencies. Yet the underlying quantum motion has not been observable in real time. Here, we study HH generation in a bulk solid directly in the time-domain, revealing a new quality of strong-field excitations in the crystal. Unlike established atomic sources, our solid emits HH radiation as a sequence of subcycle bursts which coincide temporally with the field crests of one polarity of the driving terahertz waveform. We show that these features hallmark a novel non-perturbative quantum interference involving electrons from multiple valence bands. The results identify key mechanisms for future solid-state attosecond sources and next-generation lightwave electronics. The new quantum interference justifies the hope for all-optical bandstructure reconstruction and lays the foundation for possible quantum logic operations at optical clock rates

Delta Self-Consistent Field as a method to obtain potential energy surfaces of excited molecules on surfaces

We present a modification of the $\Delta$SCF method of calculating energies of excited states, in order to make it applicable to resonance calculations of molecules adsorbed on metal surfaces, where the molecular orbitals are highly hybridized. The $\Delta$SCF approximation is a density functional method closely resembling standard density functional theory (DFT), the only difference being that in $\Delta$SCF one or more electrons are placed in higher lying Kohn-Sham orbitals, instead of placing all electrons in the lowest possible orbitals as one does when calculating the ground state energy within standard DFT. We extend the $\Delta$SCF method by allowing excited electrons to occupy orbitals which are linear combinations of Kohn-Sham orbitals. With this extra freedom it is possible to place charge locally on adsorbed molecules in the calculations, such that resonance energies can be estimated. The method is applied to N$_2$, CO and NO adsorbed on different metallic surfaces and compared to ordinary $\Delta$SCF without our modification, spatially constrained DFT and inverse-photoemission spectroscopy (IPES) measurements. This comparison shows that the modified $\Delta$SCF method gives results in close agreement with experiment, significantly closer than the comparable methods. For N$_2$ adsorbed on ruthenium (0001) we map out a 2-dimensional part of the potential energy surfaces in the ground state and the 2$\pi$-resonance. Finally we compare the $\Delta$SCF approach on gas-phase N$_2$ and CO, to higher accuracy methods. Excitation energies are approximated with accuracy close to that of time-dependent density functional theory, and we see very good agreement in the minimum shift of the potential energy surfaces in the excited state compared to the ground state.Comment: 11 pages, 7 figure

A Census Of Highly Symmetric Combinatorial Designs

As a consequence of the classification of the finite simple groups, it has been possible in recent years to characterize Steiner t-designs, that is t-(v,k,1) designs, mainly for t = 2, admitting groups of automorphisms with sufficiently strong symmetry properties. However, despite the finite simple group classification, for Steiner t-designs with t > 2 most of these characterizations have remained longstanding challenging problems. Especially, the determination of all flag-transitive Steiner t-designs with 2 < t < 7 is of particular interest and has been open for about 40 years (cf. [11, p. 147] and [12, p. 273], but presumably dating back to 1965). The present paper continues the author's work [20, 21, 22] of classifying all flag-transitive Steiner 3-designs and 4-designs. We give a complete classification of all flag-transitive Steiner 5-designs and prove furthermore that there are no non-trivial flag-transitive Steiner 6-designs. Both results rely on the classification of the finite 3-homogeneous permutation groups. Moreover, we survey some of the most general results on highly symmetric Steiner t-designs.Comment: 26 pages; to appear in: "Journal of Algebraic Combinatorics