23 research outputs found

    Very High Channel Conductivity in Low-Defect AlN/GaN High Electron Mobility Transistor Structures

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    Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (\u3e1800 cm2/V s) and sheet charge density (\u3e3×1013 cm−2), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼ 100 Ω/◻ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼ 1.3 A/mm and a peak transconductance of ∼ 260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented

    Siglec-E is a negative regulator of acute pulmonary neutrophil recruitment induced by LPS

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    Recognition of invading bacterial pathogens by human peripheral blood cd T-cells is attributed to their unique TCR-mediated detection of the microbial metabolite, HMB-PP, although the exact mechanism behind cd T-cell access to this activating ligand is largely unclear. The response of cd T-cells to HMB-PP is likely to occur at early stages of infection and collectively with cells of the innate immune system. Here we assessed the crosstalk of autologous Vc9/Vd2 T-cells, neutrophils and monocytes in response to HMB-PP producing (e.g. Klebsiella pneumoniae, Enterobacter cloacae, Pseudomonas aeruginosa, Mycobacterium smegmatis) and HMB-PP deficient live bacteria (e.g. Staphylococcus aureus, Enterococcus faecalis, Chryseobacterium indologenes, Listeria innocua). Neutrophils harbouring HMB-PP producing but not HMB-PP deficient bacteria induced CD69 on Vc9/Vd2 T-cells and secretion of IFN-c and TNF-a. In addition, activation of Vc9/Vd2 Tcells only occurred with Listeria innocua transfected with HMB-PP synthase but not with HMB-PP deficient L. innocua wild-type, demonstrating that the response of Vc9/Vd2 T-cells to neutrophils harbouring phagocytosed bacteria depended on the ability of these bacteria to produce HMB-PP. Transwell experiments showed that Vc9/ Vd2 T-cells responded directly to soluble HMB-PP released from infected neutrophils and that cell-cell contact with monocytes was required for optimum activation. HMB-PP responsive Vc9/Vd2 T-cells also rescued neutrophils from spontaneous apoptosis and stimulated them to upregulate CD11b, shed CD62L, and release IL-8. Our findings link the essential innate function of pathogen clearance by neutrophils to the activation of cd T-cells, implicating an unconventional mechanism of pathogen recognition with the ability to potentiate innate and adaptive immunity. BSI 2010 Abstracts Selected for Poster Presentation

    The Hexachlorocerate(III) Anion: A Potent, Benchtop Stable, and Readily Available Ultraviolet A Photosensitizer for Aryl Chlorides

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    The hexachlorocerate­(III) anion, [Ce<sup>III</sup>Cl<sub>6</sub>]<sup>3–</sup>, was found to be a potent photoreductant in acetonitrile solution with an estimated excited-state reduction potential of −3.45 V versus Cp<sub>2</sub>Fe<sup>0/+</sup>. Despite a short lifetime of 22.1(1) ns, the anion exhibited a photoluminescence quantum yield of 0.61(4) and fast quenching kinetics toward organohalogens allowing for its application in the photocatalytic reduction of aryl chloride substrates

    ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters

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    This paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film

    ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters

    No full text
    This paper reviews of some of the progress made in the development of ZnO-based light emitting diodes (LEDs). n-ZnO/p-AlGaN-based heterostructures have been successfully for the fabrication of UV emitting LEDs that have operated at temperatures up to 650K, suggesting an excitonic origin for the optical transitions. RF-plasma-assisted molecular beam epitaxy has been used to grow epitaxial CdxZn1-xO films on GaN/sapphire structure. These films have a single-crystal wurtzite structure as demonstrated by structural and compositional analysis. High quality CdxZn1-xO films were grown with up to x=0.78 mole fraction as determined by RBS and SIMS techniques. Optical emission ranging from purple (Cd0.05Zn0.95O) to yellow (Cd0.29Zn0.71O) was observed. Compositional fluctuations in a Cd0.16Zn0.84O films were not detected by spatially resolved CL measurements, although intensity fluctuation with features of ∼0.5 μm diameter were seen on the intensity maps. Time resolved photoluminescence shows multi-exponential decay with 21 psec. and 49±3 psec. lifetimes, suggesting that composition micro-fluctuations may be present in Cd0.16Zn0.84O film
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