A theoretical study of photovoltaic converters

Mathematical models for the photovoltaic conversion of laser power were developed. These models simulate the operation of planar and vertical junction photovoltaic converters and are described in detail

Modeling of thin-film GaAs growth

A model of crystal growth is discussed that takes into account the processes of nucleation on the growing surface and also considers the processes of surface migration and desorption of adatoms. The solid on solid (SOS) model of crystal growth is represented by a rectangular array of integers where each integer represents the number of adatoms in a column perpendicular to some reference frame. The adatoms can represent atoms or molecules that are being stacked. This SOS method is used to simulate epitaxial growth of crystals. Output of the computer program developed can be graphic or quantitative

A theoretical study of photovoltaic converters

The final phase of research was performed in the model simulation for the solar simulator pumped atomic iodine laser. The geometry for the steady state laser operation with axial lasant flow is illustrated. The chemical kinetics for this laser are described

Modeling of thin-film GaAs growth

Efforts to produce a Monte Carlo computer program for the analysis of crystal growth are briefly discussed. A literature survey was conducted of articles relating to the subject. A list of references reviewed is presented

Photovoltaic conversion of laser power to electrical power

Photovoltaic laser to electric converters are attractive for use with a space-based laser power station. The results of modeling studies for a silicon vertical junction converter used with a Nd laser are given. A computer code was developed for the model and this code was used to conduct a parametric study for a Si vertical junction converter consisting of one p-n junction irradiated with a Nd laser. These calculations predict an efficiency over 50 percent for an optimized converter

Three-dimensional models of conventional and vertical junction laser-photovoltaic energy converters

Three-dimensional models of both conventional planar junction and vertical junction photovoltaic energy converters have been constructed. The models are a set of linear partial differential equations and take into account many photoconverter design parameters. The model is applied to Si photoconverters; however, the model may be used with other semiconductors. When used with a Nd laser, the conversion efficiency of the Si vertical junction photoconverter is 47 percent, whereas the efficiency for the conventional planar Si photoconverter is only 17 percent. A parametric study of the Si vertical junction photoconverter is then done in order to describe the optimum converter for use with the 1.06-micron Nd laser. The efficiency of this optimized vertical junction converter is 44 percent at 1 kW/sq cm

Von Problemzirkeln und Lösungsräumen. Schulberatung zwischen Feldkompetenz und systemfremder Intervention

[In diesem Beitrag geht es] um Ansätze und Vorgehen bei der Beratung von Schulen. Am Beispiel der Beratungspraxis in Bremen, die über die Serviceagentur Ganztägig Lernen für Ganztagsschulen angeboten wird, werden Erfahrungen und Erkenntnisse aus Schulberatungen reflektiert. Ausgehend von Thesen über das System Schule wird die Bedeutung von lösungsorientierter Beratungspraxis dargelegt. (DIPF/Orig.

Long-term temperature effects on GaAs solar cells

The thermal degradation of AlGaAs solar cells resulting from a long-term operation in a space environment is investigated. The solar cell degradation effects caused by zinc and aluminum diffusion as well as deterioration by arsenic evaporation are presented. Also, the results are presented of experimental testing and measurements of various GaAs solar cell properties while the solar cell was operating in the temperature range of 27 C to 350 C. In particular, the properties of light current voltage curves, dark current voltage curves, and spectral response characteristics are given. Finally, some theoretical models for the annealing of radiation damage over various times and temperatures are included