Pronounced pionic self-similarity in ring-like events in

This paper reports a study of ring-like and jet-like events in terms of Scaled factorial Moments (SFMs) in two-dimensional space for pions produced in 16O-AgBr interactions at 60 A GeV. The analysis reveals an intermittent type of increase in SFMs with decreasing bin width in both types of events. The analysis further shows that stronger fluctuations occur in the case of ring-like events

Experimental Osteoporosis Induced in Female Albino Rats and its Antagonism by Indian Black Scorpion (Heterometrus Bengalensis C.L.Koch) Venom.

The present study was designed to explore the antiosteoporosis activity of the Indian black scorpion (Heterometrus bengalensis) venom on experimental osteoporosis female albino rats. Sham operated control rats were designated as Gr I, Gr II animals served as osteoporosis control, Gr III osteoporosis rats were treated with SV (1/25th of MLD), Gr IV osteoporosis rats were treated with 1/50th of MLD of SV and Gr V osteoporosis rats were treated with standard (calcium and vit-D3). As compared with the Gr I rats, the Gr II rats showed typical osteoporosis changes in increased of urinary Ca2þ, PO43�, CRE, OH-P levels, serum/plasma Ca2þ, PO4 3�, TRAP, IL1, IL6, TNFa and PTH level, bone Ca2þ, PO4 3�, Mg2þ, Zn2þ and decreased level of serum/plasma ALP, EST and PTH, bone Naþ. In Gr III, Gr IV and Gr V rats, the osteoporosis changes of urine, serum and bone, were significantly restored as compared with the Gr II rats. The bone dimensions, morphology and histological changes observed in Gr II rats were restored in Gr III, Gr IV and Gr V rats. This study confirms that the Indian black scorpion venom may influence bone remodeling process by stimulating bone formation and reducing bone resorption process of osteogenesis

Introgression of Thinopyrum elongatum DNA fragments carrying resistance to fusarium head blight into Triticum aestivum cultivar Chinese Spring is associated with alteration of gene expression.

The tall wheatgrass species Thinopyrum elongatum carries on the long arm of its chromosome 7E a locus contributing strongly to resistance to fusarium head blight (FHB), a devastating fungal disease affecting wheat crops in all temperate areas of the world. Introgression of Th. elongatum 7E chromatin into chromosome 7D of wheat was induced by the ph1b mutant of CS. Recombinants between chromosome 7E and wheat chromosome 7D, induced by the ph1b mutation, were monitored by a combination of molecular markers and phenotyping for FHB resistance. Progeny of up to five subsequent generations derived from two lineages, 64-8 and 32-5, were phenotyped for FHB symptoms and genotyped using published and novel 7D- and 7E-specific markers. Fragments from the distal end of 7EL, still carrying FHB resistance and estimated to be less than 114 and 66 Mbp, were identified as introgressed into wheat chromosome arm 7DL of progeny derived from 64-8 and 32-5, respectively. Gene expression analysis revealed variation in the level of expression of genes from the distal ends of 7EL and 7DL in the introgressed progeny. The 7EL introgressed material will facilitate use of the 7EL FHB resistance locus in wheat breeding programs.The accepted manuscript in pdf format is listed with the files at the bottom of this page. The presentation of the authors' names and (or) special characters in the title of the manuscript may differ slightly between what is listed on this page and what is listed in the pdf file of the accepted manuscript; that in the pdf file of the accepted manuscript is what was submitted by the author

Optimization of growth of InGaAs/InP quantum wells using photoluminescence and secondary ion mass spectrometry

InGaAs/InP quantum wells of widths varying from 19 Å to 150 Å have been grown by MOVPE and the growth temperature optimized using photoluminescence and SIMS. It was thus found that for a 78 Å well the lowest PL linewidth of 12.7 meV at 12 K was obtained for growth at 625°C. SIMS also showed sharpest interfaces for this temperature compared with growth at 610°C and 640°C. The well widths determined from PL energies were in good agreement with a growth rate of 8.25 Å /s. However, while the barrier widths of 150 Å were in agreement with SIMS results, the well widths from SIMS were found to be much larger, due to a lower sputtering rate of InGaAs compared with InP. Quantitative comparison was made assuming the presence of InAsP and InGaAsP interface layers on either side of the wells and the relative sputtering rates determined