Clustering induced suppression of ferromagnetism in diluted magnets

Ferromagnetism in diluted magnets in the compensated regime p << x is shown to be suppressed by the formation of impurity spin clusters. The majority bulk spin couplings are shown to be considerably weakened by the preferential accumulation of holes in spin clusters, resulting in low-energy magnon softening and enhanced low-temperature decay of magnetic order. A locally self-consistent magnon renormalization analysis of spin dynamics shows that although strong intra-cluster correlations tend to prolong global order, T_c is still reduced compared to the ordered case.Comment: published version, 5 pages, 4 figure

Anisotropic Magnetoresistance in Ga1−x_{1-x}Mnx_xAs

We have measured the magnetoresistance in a series of Ga$_{1-x}$Mn$_x$As samples with 0.033$\le x \le$ 0.053 for three mutually orthogonal orientations of the applied magnetic field. The spontaneous resistivity anisotropy (SRA) in these materials is negative (i.e. the sample resistance is higher when its magnetization is perpendicular to the measuring current than when the two are parallel) and has a magnitude on the order of 5% at temperatures near 10K and below. This stands in contrast to the results for most conventional magnetic materials where the SRA is considerably smaller in magnitude for those few cases in which a negative sign is observed. The magnitude of the SRA drops from its maximum at low temperatures to zero at T$_C$ in a manner that is consistent with mean field theory. These results should provide a significant test for emerging theories of transport in this new class of materials.Comment: 4 pages with 4 figures. Submitted to Physical Review

Carrier induced ferromagnetism in diluted magnetic semi-conductors

We present a theory for carrier induced ferromagnetism in diluted magnetic semi-conductor (DMS). Our approach treats on equal footing quantum fluctuations within the RPA approximation and disorder within CPA. This method allows for the calculation of $T_c$, magnetization and magnon spectrum as a function of hole, impurity concentration and temperature. It is shown that, sufficiently close to $T_c$, and within our decoupling scheme (Tyablicov type) the CPA for the itinerant electron gas reduces to the Virtual Crystal Approximation. This allows, in the low impurity concentration and low density of carriers to provide analytical expression for $T_c$. For illustration, we consider the case of $Ga_{1-c}Mn_{c}As$ and compare our results with available experimental data.Comment: 5 figures included. to appear in Phys. Rev. B (brief report

Theory of Magnetic Properties and Spin-Wave Dispersion for Ferromagnetic (Ga,Mn)As

We present a microscopic theory of the long-wavelength magnetic properties of the ferromagnetic diluted magnetic semiconductor (Ga,Mn)As. Details of the host semiconductor band structure, described by a six-band Kohn-Luttinger Hamiltonian, are taken into account. We relate our quantum-mechanical calculation to the classical micromagnetic energy functional and determine anisotropy energies and exchange constants. We find that the exchange constant is substantially enhanced compared to the case of a parabolic heavy-hole-band model.Comment: 9 pages, 4 figure

Desorption of CO from individual ruthenium porphyrin molecules on a copper surface via an inelastic tunnelling process.

The coordination of CO to metalloporphyrins changes their electronic and magnetic properties. Here we locally desorb CO molecules from a single ruthenium tetraphenylporphyrin carbonyl (CO-RuTPP) on Cu(110) using STM. The desorption is triggered by the injection of holes into the occupied states of the adsorbate using an unusual two-carrier process

A Substellar Companion to the Intermediate-Mass Giant 11 Com

We report the detection of a substellar companion orbiting the intermediate-mass giant star 11 Com (G8 III). Precise Doppler measurements of the star from Xinglong station and Okayama Astrophysical Observatory (OAO) revealed Keplerian velocity variations with an orbital period of 326.03 +/- 0.32 days, a semiamplitude of 302.8 +/- 2.6 m/s, and an eccentricity of 0.231 +/- 0.005. Adopting a stellar mass of 2.7 +/- 0.3 M_solar, the minimum mass of the companion is 19.4 +/- 1.5 M_Jup, well above the deuterium burning limit, and the semimajor axis is 1.29 +/- 0.05 AU. This is the first result from the joint planet search program between China and Japan aiming at revealing statistics of substellar companions around intermediate-mass giants. 11 Com b emerged from 300 targets of the planet search program at OAO. The current detection rate of a brown dwarf candidate seems to be comparable to that around solar-type stars within orbital separations of $\sim$3 AU.Comment: 19 pages, 4 figures, accepted by Ap

Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T_c in high-quality metallic samples increases linearly with the number of uncompensated local moments on Mn_Ga acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistnent with the picture in which Mn impurities incorporated during growth at interstitial Mn_I positions act as double-donors and compensate neighboring Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I antiferromagnetic coupling. These defects can be efficiently removed by post-growth annealing. Our analysis suggests that there is no fundamental obstacle to substitutional Mn_Ga doping in high-quality materials beyond our current maximum level of 6.2%, although this achievement will require further advances in growth condition control. Modest charge compensation does not limit the maximum Curie temperature possible in ferromagnetic semiconductors based on (Ga,Mn)As.Comment: 13 pages, 12 figures, submitted to Phys. Rev.

High-Temperature Hall Effect in Ga(1-x)Mn(x)As

The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the Curie-Weiss law, a spontaneous Hall coefficient proportional to rho_xx^2(T), and including a constant diamagnetic contribution in the susceptibility. For all low resistivity samples this model provides excellent fits to the measured data up to T=380K and allows extraction of the hole concentration (p). The calculated p are compared to alternative methods of determining hole densities in these materials: pulsed high magnetic field (up to 55 Tesla) technique at low temperatures (less than the Curie temperature), and electrochemical capacitance- voltage profiling. We find that the Anomalous Hall Effect (AHE) contribution to rho_xy is substantial even well above the Curie temperature. Measurements of the Hall effect in this temperature regime can be used as a testing ground for theoretical descriptions of transport in these materials. We find that our data are consistent with recently published theories of the AHE, but they are inconsistent with theoretical models previously used to describe the AHE in conventional magnetic materials.Comment: 6 pages, 5 figures, 1 table. Accepted to Phys.Rev.

Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p = 3.5x10^20 cm ^-3 of a metallic (Ga0.947Mn0.053)As layer. The analysis of the temperature and magnetic field dependencies of the resistivity in the paramagnetic region was performed with the use of the above value of p, which gave the magnitude of p-d exchange energy |N0beta | ~ 1.5 eV.Comment: PDF file, 8 pages, 4 figure

320 Gb/s Nyquist OTDM received by polarization-insensitive time-domain OFT

We have demonstrated the generation of a 320 Gb/s Nyquist-OTDM signal by rectangular filtering on an RZ-OTDM signal with the filter bandwidth (320 GHz) equal to the baud rate (320 Gbaud) and the reception of such a Nyquist-OTDM signal using polarization-insensitive time-domain optical Fourier transformation (TD-OFT) followed by passive filtering. After the time-to-frequency mapping in the TD-OFT, the Nyquist-OTDM signal with its characteristic sinc-shaped time-domain trace is converted into an orthogonal frequency division multiplexing (OFDM) signal with sinc-shaped spectra for each subcarrier. The subcarrier frequency spacing of the converted OFDM signal is designed to be larger than the transform-limited case, here 10 times greater than the symbol rate of each subcarrier. Therefore, only passive filtering is needed to extract the subcarriers of the converted OFDM signal. In addition, a polarization diversity scheme is used in the four-wave mixing (FWM) based TD-OFT, and less than 0.5 dB polarization sensitivity is demonstrated in the OTDM receiver.</p