66 research outputs found
Origin of anomalously long interatomic distances in suspended gold chains
The discovery of long bonds in gold atom chains has represented a challenge
for physical interpretation. In fact, interatomic distances frequently attain
3.0-3.6 A values and, distances as large as 5.0 A may be seldom observed. Here,
we studied gold chains by transmission electron microscopy and performed
theoretical calculations using cluster ab initio density functional formalism.
We show that the insertion of two carbon atoms is required to account for the
longest bonds, while distances above 3 A may be due to a mixture of clean and
one C atom contaminated bonds.Comment: 4 pages, 4 Postscript figures, to be published in Physical Review
Letter
Stiff monatomic gold wires with a spinning zigzag geometry
Using first principles density functional calculations, gold monatomic wires
are found to exhibit a zigzag shape which remains under tension, becoming
linear just before breaking. At room temperature they are found to spin, what
explains the extremely long apparent interatomic distances shown by electron
microscopy.The zigzag structure is stable if the tension is relieved, the wire
holding its chainlike shape even as a free-standing cluster. This unexpected
metallic-wire stiffness stems from the transverse quantization in the wire, as
shown in a simple free electron model.Comment: 4 pages, latex, 5 figures, submitted to PR
Surface reconstruction induced geometries of Si clusters
We discuss a generalization of the surface reconstruction arguments for the
structure of intermediate size Si clusters, which leads to model geometries for
the sizes 33, 39 (two isomers), 45 (two isomers), 49 (two isomers), 57 and 61
(two isomers). The common feature in all these models is a structure that
closely resembles the most stable reconstruction of Si surfaces, surrounding a
core of bulk-like tetrahedrally bonded atoms. We investigate the energetics and
the electronic structure of these models through first-principles density
functional theory calculations. These models may be useful in understanding
experimental results on the reactivity of Si clusters and their shape as
inferred from mobility measurements.Comment: 9 figures (available from the author upon request) Submitted to Phys.
Rev.
Relativistic calculations to assess the ability of the generalized gradient approximation to reproduce trends in cohesive properties of solids
The 2018 GaN Power Electronics Roadmap
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here
Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a-plane GaN
Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth
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