Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La 1/3 Ca 2/3 MnO 3 /Pt structures using a compact memristive approach

The hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO3 (LCMO)-based memristive devices were investigated. The oxide films were grown by pulsed laser deposition (PLD) and sandwiched between Ag and Pt electrodes. The devices exhibit bipolar resistive switching (RS) effect with well-defined intermediate conduction states that arise from partial SET and RESET events. The current-voltage curves are modeled and simulated using a compact memristive approach. Two equations are considered: one for the electron transport based on the double-diode equation and the other for the memory state of the device driven by the play operator with logistic ridge functions. An expression that accounts for the remnant resistance of the device is obtained after simplifying the model equations in the low-voltage limit. The role played by the power dissipation in the LCMO reset dynamics as well as the asymmetrical reduction of the resistance window caused by long trains of switching pulses are discussed.Fil: Miranda, E.. Universidad Autonoma de Barcelona. Facultad de Física; EspañaFil: Roman Acevedo, Wilson Stibens. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Rubi, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; ArgentinaFil: Lüders, U.. Centre National de la Recherche Scientifique; Francia. École Nationale Supérieure d'Ingénieurs de Caen; FranciaFil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; ArgentinaFil: Suñé, J.. Universidad Autonoma de Barcelona. Facultad de Física; EspañaFil: Levy, Pablo Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes. Gerencia de Investigación y Aplicaciones; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentin

Electrical transport across nanometric SrTiO3 and BaTiO3 barriers in conducting/insulator/conducting junctions

We report the electrical transport properties of conducting/insulator/conducting heterostructures by studying current-voltage IV curves at room temperature. The measurements were obtained on tunnel junctions with different areas (900, 400 and 100 μm2) using a conducting atomic force microscope. Trilayers with GdBa2Cu3O7 (GBCO) as the bottom electrode, SrTiO3 or BaTiO3 (thicknesses between 1.6 and 4 nm) as the insulator barrier, and GBCO or Nb as the top electrode were grown by DC sputtering on (100) SrTiO3 substrates For SrTiO3 and BaTiO3 barriers, asymmetric IV curves at positive and negative polarization can be obtained using electrodes with different work function. In addition, hysteretic IV curves are obtained for BaTiO3 barriers, which can be ascribed to a combined effect of the FE reversal switching polarization and an oxygen vacancy migration. For GBCO/BaTiO3/GBCO heterostructures, the IV curves correspond to that expected for asymmetric interfaces, which indicates that the disorder affects differently the properties at the bottom and top interfaces. Our results show the role of the interface disorder on the electrical transport of conducting/insulator/conduction heterostructures, which is relevant for different applications, going from resistive switching memories (at room temperature) to Josephson junctions (at low temperatures).Fil: Navarro Fernández, Henry Luciano. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Sirena, Martin. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Gonzalez Sutter, Jesus Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Troiani, Horacio Esteban. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: del Corro, Pablo Guillermo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial; ArgentinaFil: Golmar, Federico. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Haberkorn, Nestor Fabian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentin

Thickness dependence of the superconducting properties of γ- Mo2N thin films on Si (001) grown by DC sputtering at room temperature

We study the crystalline structure and superconducting properties of γ-Mo2N thin films grown by reactive DC sputtering on AlN buffered Si (001) substrates. The films were grown at room temperature. The microstructure of the films, which was studied by X-ray diffraction and transmission electron microscopy, shows a single-phase with nanometric grains textured along the (200) direction. The films exhibit highly uniform thickness in areas larger than 20 × 20 μm2. The superconducting critical temperature Tc is suppressed from 6.6 K to ≈ 3.0 K when the thickness decreases from 40 nm to 5 nm. The residual-resistivity ratio is slightly smaller than 1 for all the films, which indicates very short electronic mean free path. The films are in the superconducting dirty limit with upper critical field Hc2 (0) ≈ 12 T for films with thickness of 40 nm, and 9 T for films with thickness of 10 nm. In addition, from the critical current densities Jc in the vortex-free state, we estimate a penetration depth λ(0) ≈ (800 ± 50) nm and a thermodynamic critical field Hc (0) = (500 ± 80 Oe).Fil: Haberkorn, Nestor Fabian. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Bengió, Silvina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Troiani, Horacio Esteban. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Suarez, Sergio Gabriel. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Pérez, Pablo Daniel. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Granell, Pablo Nicolás. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; ArgentinaFil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial; ArgentinaFil: Sirena, Martin. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Guimpel, Julio Juan. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin

Highly compliant planar Hall effect sensor with sub 200 nT sensitivity

Being a facet of flexible electronics, mechanically reshapeable magnetic field sensorics enable novel device ideas for soft robotics, interactive devices for virtual- and augmented reality and point of care diagnostics. These applications demand mechanically compliant yet robust sensor devices revealing high sensitivity to small magnetic fields. To push the detection limit of highly compliant and linear magnetic field sensors to be in the sub-µT range, we explore a new fundamental concept for magnetic field sensing, namely the planar Hall effect in magnetic thin films. With their remarkable bendability down to 1 mm, these compliant planar Hall effect sensors allow for an efficient detection of magnetic fields as small as 200 nT with a limit of detection of 20 nT. We demonstrate the application potential of these devices as a direction (angle) as well as proximity (distance) sensors of tiny magnetic fields emanating from magnetically functionalized objects. With their intrinsic linearity and simplicity of fabrication, these compliant planar Hall effect sensors have the potential to become a standard solution for low field applications of shapeable magnetoelectronics in point of care applications and on-skin interactive electronics.Fil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; ArgentinaFil: Wang, Guoliang. Institute of Ion Beam Physics and Materials Research; AlemaniaFil: Cañon Bermudez, Gilbert Santiago. Institute of Ion Beam Physics and Materials Research; AlemaniaFil: Kosub, Tobias. Institute of Ion Beam Physics and Materials Research; AlemaniaFil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; ArgentinaFil: Steren, Laura Beatriz. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Constituyentes.; ArgentinaFil: Fassbender, Jürgen. Institute of Ion Beam Physics and Materials Research; AlemaniaFil: Makarov, Denys. Institute of Ion Beam Physics and Materials Research; Alemani

Effect of butanol and salt concentration on solid-state nanopores resistance

The objective of this study was to demonstrate the possibility of using 1-butanol to detect in a reliable way the open pore current of pyramidal solid-state nanopores produced in silicon wafers. The nanopores were produced through controlled pore formation by neutralizing an etchant (KOH) with a strong acid (HCl). Since nanopores produced by this method have a larger depth than those made in nanometer thick membranes, they behave as nanochannels. As a consequence, the open pore current detection is more challenging. Thus, we report that low amounts of butanol considerably aid in the detection of the open pore current of nanopores.Fil: Vega, M.. Universidad Tecnológica Nacional. Facultad Regional Haedo; ArgentinaFil: Perez, Maximiliano Sebastian. Universidad Tecnológica Nacional. Facultad Regional Haedo; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Granell, Pablo Nicolás. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Wloka, C.. University of Groningen; Países BajosFil: Maglia, G.. University of Groningen; Países BajosFil: Dieguez, M.J.. Instituto Nacional de Tecnología Agropecuaria; ArgentinaFil: Del Valle, E.M.. Universidad de Salamanca; EspañaFil: Lasorsa, Carlos Alberto. Universidad Tecnológica Nacional. Facultad Regional Haedo; ArgentinaFil: Lerner, Betiana. Universidad Tecnológica Nacional. Facultad Regional Haedo; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin

Design and analysis of different models of microfluidic devices evaluated in enhanced oil recovery (EOR) assays

Microfluidic devices are a new platform for Enhanced Oil Recovery (EOR) assays. A successful oil recoveryin a reservoir can be different in another, hence the importance of a methodology for assessment prior toinjection. In the current study, micro and nanotechnology techniques were applied to develop EOR assays.The EOR chips simulated the phenomena occurred in micro-nano scale reservoirs. In general, the first step ofthe experiments corresponded to fill the microchannels with oil, then was injected water at constant flow rateuntil oil recovery ceases and finally was injected polymer or CDG. The recovery behaviors of the fluids werestudied by digital image analysis. Results allowed obtaining oil recovery for each evaluated fluid. Theoptimum configuration of the microchannels showed 80% of oil residual saturation after water injection.Keywords: EOR, poral volume, microgels and polymers, microfuidic devices.Fil: Rosero Yánez, Gustavo Ivan. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Haedo. Grupo de Ingeniería de Recubrimientos Especiales y Nanotecnología; ArgentinaFil: Peñaherrera Pazmiño, Ana Belén. Universidad Tecnológica Nacional. Facultad Regional Haedo. Grupo de Ingeniería de Recubrimientos Especiales y Nanotecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Olmos Carreno, Carol Maritza. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional. Facultad Regional Haedo. Grupo de Ingeniería de Recubrimientos Especiales y Nanotecnología; ArgentinaFil: Boschan, Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires. Facultad de Ingeniería; ArgentinaFil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial; ArgentinaFil: Golmar, Federico. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Lasorsa, Carlos Alberto. Universidad Tecnológica Nacional. Facultad Regional Haedo. Grupo de Ingeniería de Recubrimientos Especiales y Nanotecnología; ArgentinaFil: Lerner, Betiana. Universidad Tecnológica Nacional. Facultad Regional Haedo. Grupo de Ingeniería de Recubrimientos Especiales y Nanotecnología; Argentina. Universidad de Buenos Aires. Facultad de Ingeniería; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Perez, Maximiliano Sebastian. Universidad Tecnológica Nacional. Facultad Regional Haedo. Grupo de Ingeniería de Recubrimientos Especiales y Nanotecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad de Buenos Aires. Facultad de Ingeniería; Argentin

Automated and inexpensive method to manufacture solid- state nanopores and micropores in robust silicon wafers

In this work an easy, reproducible and inexpensive technique for the production of solid state nanopores and micropores using silicon wafer substrate is proposed. The technique is based on control of pore formation, by neutralization etchant (KOH) with a strong acid (HCl). Thus, a local neutralization is produced around the nanopore, which stops the silicon etching. The etching process was performed with 7M KOH at 80°C, where 1.23μ m/min etching speed was obtained, similar to those published in literature. The control of the pore formation with the braking acid method was done using 12M HCl and different extreme conditions: i) at 25°C, ii) at 80°C and iii) at 80°C applying an electric potential. In these studies, it was found that nanopores and micropores can be obtained automatically and at a low cost. Additionally, the process was optimized to obtain clean silicon wafers after the pore fabrication process. This method opens the possibility for an efficient scale-up from laboratory production.Fil: Vega Moreno, Milena Amparo. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; ArgentinaFil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; ArgentinaFil: Lasorsa, Carlos Alberto. Universidad Tecnológica Nacional; ArgentinaFil: Lerner, Betiana. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; ArgentinaFil: Perez, Maximiliano Sebastian. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentin

Manganite-based three level memristive devices with self-healing capability

We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/La1/3Ca2/3MnO3/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an intermediate resistance state. We observe three discrete resistance levels (low, intermediate and high), which can be set either by the application of current–voltage ramps or by means of single pulses. These states exhibit retention and endurance capabilities exceeding 104 s and 70 cycles, respectively. We rationalize our experimental observations by proposing a mixed scenario were a metallic filament and a SiOx layer coexist, accounting for the observed resistive switching. Overall electrode area dependence and temperature dependent resistance measurements support our scenario. After device failure takes place, the system can be turned functional again by heating up to low temperature (120 ◦C), a feature that could be exploited for the design of memristive devices with self-healing functionality. These results give insight into the existence of multiple resistive switching mechanisms in manganite-based memristive systems and provide strategies for controlling them.Fil: Roman Acevedo, Wilson Stibens. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Rubi, Diego. Comisión Nacional de Energía Atómica; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Lecourt, J.. Centre National de la Recherche Scientifique; FranciaFil: Luders, U.. Centre National de la Recherche Scientifique; FranciaFil: Gomez Marlasca, F.. Comisión Nacional de Energía Atómica; ArgentinaFil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial; ArgentinaFil: Golmar, Federico. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Levy, Pablo Eduardo. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin

Effect of mixed pinning landscapes produced by 6 MeV oxygen irradiation on the resulting critical current densities J c in 1.3 µm thick GdBa 2 Cu 3 O 7- d coated conductors grown by co-evaporation

We report the influence of crystalline defects introduced by 6 MeV 16 O 3+ irradiation on the critical current densities J c and flux creep rates in 1.3 µm thick GdBa 2 Cu 3 O 7- δ coated conductor produced by co-evaporation. Pristine films with pinning produced mainly by random nanoparticles with diameter close to 50 nm were irradiated with doses between 2 × 10 13 cm −2 and 4 × 10 14 cm −2 . The irradiations were performed with the ion beam perpendicular to the surface of the samples. The J c and the flux creep rates were analyzed for two magnetic field configurations: magnetic field applied parallel (H║c) and at 45° (H║45°) to the c-axis. The results show that at temperatures below 40 K the in-field J c dependences can be significantly improved by irradiation. For doses of 1 × 10 14 cm −2 the J c values at μ 0 H = 5 T are doubled without affecting significantly the J c at small fields. Analyzing the flux creep rates as function of the temperature in both magnetic field configurations, it can be observed that the irradiation suppresses the peak associated with double-kink relaxation and increases the flux creep rates at intermediate and high temperatures. Under 0.5 T, the flux relaxation for H‖c and H||45° in pristine films presents characteristic glassy exponents μ = 1.63 and μ = 1.45, respectively. For samples irradiated with 1 × 10 14 cm −2 , these values drop to μ = 1.45 and μ = 1.24, respectivelyFil: Haberkorn, Nestor Fabian. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Suarez, Sergio Gabriel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Pérez, Pablo Daniel. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Troiani, Horacio Esteban. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial; ArgentinaFil: Golmar, Federico. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Instituto Nacional de Tecnología Industrial; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Lee, Jae Hun. SuNAM Co.; Corea del SurFil: Moon, S.H.. SuNAM Co.; Corea del Su

Vortex creep and critical current densities Jc in a 2 um thick SmBa2Cu3O7-δ coated conductor with mixed pinning centers grown by co-evaporation

We report the critical current densities Jc and flux creep rates in a 2 mm thick SmBa2Cu3O7-dcoated conductor produced by co-evaporation. The sample presents strong pinning produced by correlated disorder (boundaries between growth islands, dislocations and twin boundaries) as well as random nanoparticles. Correlated pinning along the c- axis was evidenced due to the appearance of a large peak in the angular critical current, centred at H ║ c. The analysis of the critical current density Jc (with the magnetic field applied parallel (H║c) and at 45° of the c-axis (H║45°)) indicates that correlated disorder assists pinning throughout the temperature range. For all temperatures and at both angles the in-field dependence of Jc exhibits a power-law behavior. The contribution of correlated disorder drops when the field is rotated to intermediate angles between the c axis and a-b axis (i. e. H║45°), which derives in a reduction of the absolute Jc value and poorer in-field dependences. The flux creep rate depends on the angle and its values remain approximately constant within 2 the power-law regime. For H║c and H║45° and for magnetic fields lower than 20 kOe, the flux relaxation presents characterizing glassy exponents u = 1.70 and u =1.32, respectively.Fil: Haberkorn, Nestor Fabian. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); ArgentinaFil: Coulter, Y.. Los Alamos National High Magnetic Field Laboratory; Estados UnidosFil: Condo, Adriana Maria. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Area de Investigación y Aplicaciones No Nucleares. Gerencia de Física (Centro Atómico Bariloche); ArgentinaFil: Granell, Pablo Nicolás. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; ArgentinaFil: Golmar, Federico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Instituto Nacional de Tecnología Industrial. Centro de Micro y Nanoelectrónica del Bicentenario; Argentina. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; ArgentinaFil: Ha, H. S.. Korea Electrotechnology Research Institute; Corea del NorteFil: Moon, S. H.. SuNAM Co; Corea del Nort