Теневой человек как социокультурный феномен

Background: Cardiorespiratory fitness (CRF) is a physical condition that is now well established as a predictor of numerous adverse health outcomes, independent of physical activity levels. In order to be able to improve CRF at the population level and to develop effective interventions and public health programmes, it is important to understand why some people are more fit than others. Therefore, the primary aim of the systematic review described in this protocol is to examine individual and interpersonal factors that are correlated with or determine CRF among adults. Methods: The review will focus on quantitative studies that investigate any personal and interpersonal correlates and/or determinants of objectively measured CRF among the general, non-symptomatic, non-institutionalized adult population (aged 18–65 years) worldwide. The databases MEDLINE, Embase, and Cochrane Library will be searched to identify all relevant published journal articles, and Google Scholar and Scopus will be searched for grey literature. Studies where CRF is not an outcome variable and experimental studies where participants specifically receive a fitness intervention that increases CRF will be excluded. For each study, data extracted will include, among other variables, study characteristics, methodology for selecting participants into the study as well as the participants’ demographic characteristics, types of correlates and determinants of CRF investigated and their measurement methods, the objective measure of CRF used and its measurement method and validity, and the main reported results on the association between the correlates or determinants and CRF. In addition, observational studies will be assessed for methodological quality and risk of bias using a customized version of the Quality Assessment Tool for Observational Cohort and Cross-Sectional Studies by the National Heart, Lung, and Blood Institute. Experimental studies will be assessed using the 27-item Downs and Black “Checklist for Measuring Study Quality”. The final results will be presented as a narrative synthesis of the main findings of all included studies. Discussion: By consolidating and synthesizing the current research on possible individual and interpersonal correlates and determinants of CRF among adults worldwide, we aim to aid future public health actions, as well as identify gaps in our full understanding of what influences CRF

Effect of exchange interaction on spin dephasing in a double quantum dot.

We measure singlet-triplet dephasing in a two-electron double quantum dot in the presence of an exchange interaction which can be electrically tuned from much smaller to much larger than the hyperfine energy. Saturation of dephasing and damped oscillations of the spin correlator as a function of time are observed when the two interaction strengths are comparable. Both features of the data are compared with predictions from a quasistatic model of the hyperfine field

Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon

We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially grown on Ge/Si substrates. Some devices maintain lasing oscillation after more than 2700 h of constant current stress at 30 °C, longer than any previous life tests of GaAs lasers epitaxially grown on silicon. No catastrophic failures were observed. The lasers were characterized to gain insight on the aging mechanism

Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon

We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially grown on Ge/Si substrates. Some devices maintain lasing oscillation after more than 2700 h of constant current stress at 30 °C, longer than any previous life tests of GaAs lasers epitaxially grown on silicon. No catastrophic failures were observed. The lasers were characterized to gain insight on the aging mechanism

Preparing, manipulating, and measuring quantum states on a chip

We use gate voltage control of the exchange interaction to prepare, manipulate, and measure two-electron spin states in a GaAs double quantum dot. By placing two electrons in a single dot at low temperatures we prepare the system in a spin singlet state. The spin singlet is spatially separated by transferring an electron to an adjacent dot. The spatially separated spin singlet state dephases in ∼ 10 ns due to the contact hyperfine interaction with the GaAs host nuclei. To combat the hyperfine dephasing, we develop quantum control techniques based on fast electrical control of the exchange interaction. We demonstrate coherent spin-state rotations in a singlet-triplet qubit and harness the coherent rotations to implement a singlet-triplet spin echo refocusing pulse sequence. The singlet-triplet spin echo extends the spin coherence time to 1.2 μ s. © 2006 Elsevier B.V. All rights reserved

Coherent manipulation of coupled electron spins in semiconductor quantum dots.

We demonstrated coherent control of a quantum two-level system based on two-electron spin states in a double quantum dot, allowing state preparation, coherent manipulation, and projective readout. These techniques are based on rapid electrical control of the exchange interaction. Separating and later recombining a singlet spin state provided a measurement of the spin dephasing time, T2*, of approximately 10 nanoseconds, limited by hyperfine interactions with the gallium arsenide host nuclei. Rabi oscillations of two-electron spin states were demonstrated, and spin-echo pulse sequences were used to suppress hyperfine-induced dephasing. Using these quantum control techniques, a coherence time for two-electron spin states exceeding 1 microsecond was observed

Measurement and modeling of ErAs:In0.53Ga0.47As nanocomposite photoconductivity for THz generation at 1.55 μ m pump wavelength

We present new high-resolution measurements of transient time-domain photoconductivity in ErAs:InGaAs superlattice nanocomposites intended for THz photoconductive switches and photomixers using a pure optical pump-probe method. We developed a model, using separate photocarrier trapping, recombination, and thermal reactivation processes, which very accurately fits the measurements. The measured material structures all exhibit a slow secondary decay process, which is attributed to thermal reactivation of the trapped carriers, either into the conduction band, or into high-energy defect states. We examined the influence of superlattice structure, dopants, DC bias, and temperature. Analysis shows that all of the THz energy produced by the photocarrier trapping and decay processes are at frequencies less than 1 THz, while the reactivation process only serves to create a large portion of the bias power dissipated. Energy higher than 1 THz must be created by a fast generation process or band-filling saturation. This allows pulsed THz generation even from a long-lifetime material. Pure optical pump-probe measurements are necessary to expose slow material processes, and eliminate the influence of electrical terminals and THz antennas. These measurements and modeling of THz photoconductive devices are necessary in order to optimize the output spectrum and power. © 2014 AIP Publishing LLC

Measurement and modeling of ErAs:In0.53Ga0.47As nanocomposite photoconductivity for THz generation at 1.55 μ m pump wavelength

We present new high-resolution measurements of transient time-domain photoconductivity in ErAs:InGaAs superlattice nanocomposites intended for THz photoconductive switches and photomixers using a pure optical pump-probe method. We developed a model, using separate photocarrier trapping, recombination, and thermal reactivation processes, which very accurately fits the measurements. The measured material structures all exhibit a slow secondary decay process, which is attributed to thermal reactivation of the trapped carriers, either into the conduction band, or into high-energy defect states. We examined the influence of superlattice structure, dopants, DC bias, and temperature. Analysis shows that all of the THz energy produced by the photocarrier trapping and decay processes are at frequencies less than 1 THz, while the reactivation process only serves to create a large portion of the bias power dissipated. Energy higher than 1 THz must be created by a fast generation process or band-filling saturation. This allows pulsed THz generation even from a long-lifetime material. Pure optical pump-probe measurements are necessary to expose slow material processes, and eliminate the influence of electrical terminals and THz antennas. These measurements and modeling of THz photoconductive devices are necessary in order to optimize the output spectrum and power. © 2014 AIP Publishing LLC