Desorption/ionization on silicon for small molecules : a promising alternative to MALDI TOF

A method has been developed for laser desorption/ionization of catecholamines from porous silicon. This methodology is particularly attractive for analysis of small molecules. MALDI TOF mass spectrometry, although a very sensitive technique, utilizes matrices that need to be mixed with the sample prior to their analysis. Each matrix produces its own background, particularly in the low-molecular mass region. Therefore, detection and identification of molecules below 400 Da can be difficult. Desorption/ionization of samples deposited on porous silicon does not require addition of a matrix, thus, spectra in the low-molecular mass region can be clearly readable. Here, we describe a method for the analysis of catecholamines. While MALDI TOF is superior for proteomics/peptidomics, desorption/ionization from porous silicon can extend the operating range of a mass spectrometer for studies on metabolomics (small organic molecules and their metabolites, such as chemical neurotransmitters, prostaglandins, steroids, etc.)

Comparisons between Membrane, Bridge and Cantilever Miniaturized Resistive Vacuum Gauges

Using bulk micromachining, meander-shaped resistor elements consisting of 20 nm Cr and 200 nm Au were fabricated on 1 μm thick silicon nitride membranes, bridges, and cantilevers. The resistance change as a function of pressure depends strongly on the thermal resistance of the two metal lines connecting the heated resistor to the silicon bulk (cold junction) and on the thermal resistance of the silicon nitride. Relative resistance changes ranging from about 3% (small membrane) to 20% (bridge) per mW of input power were obtained when operating the devices in constant voltage mode. The pressure where maximum sensitivity of these gauges occurs depends on the distance ‘d’ between the periphery of the heated resistor element and the silicon cold junction. Devices with ‘d’ ranging from 50 μm to 1,200 μm were fabricated. Assuming that pressures can be reliably measured above the 10% and below the 90% points of the resistance versus pressure curve, the range of these devices is about two orders of magnitude. By integrating two devices, one with d = 65 μm and one with d = 1,200 μm on the same chip and connecting them in series, the range can be increased by about a factor of three. By fabricating the cantilever devices so that they curl upon release, it will be shown that these devices also exhibit larger range due to varying ‘d’