High-performance adaptive neurofuzzy classifier with a parametric tuning

The article is devoted to research and development of adaptive algorithms for neuro-fuzzy inference when solving multicriteria problems connected with analysis of expert (foresight) data to identify technological breakthroughs and strategic perspectives of scientific, technological and innovative development. The article describes the optimized structuralfunctional scheme of the high-performance adaptive neuro-fuzzy classifier with a logical output, which has such specific features as a block of decision tree-based fuzzy rules and a hybrid algorithm for neural network adaptation of parameters based on the error back-propagation to the root of the decision tree

Adaptive neuro-fuzzy classifier for evaluating the technology effectiveness based on the modified Wang and Mendel fuzzy neural production MIMO-network

The paper describes practical results gained during synthesis of the classification model for estimating technology effectiveness when solving multi-criteria problems of expert data analysis (Foresight) aimed to identify technological breakthroughs and strategic perspectives of scientific, technological and innovative developmen

Adaptive fuzzy neural production network with MIMO-structure for the evaluation of technology efficiency

The paper presents an example of modeling the algorithm operation. The paper analyses the modified Wang and Mendel MIMO-architecture of the adaptive fuzzy neural production network with a logical conclusion. It is distinguished by the automatic generation of a set of fuzzy rules based on a fuzzy decision tree and a hybrid algorithm for parameter adaptation by the neural network (centers, widths of membership functions, and conclusions) starting from the leaf nodes to the root nodes of the tree

Neuro-fuzzy methods in cognitive systems of monitoring and forecasting of scientific and technological development of the country

On the basis of many national and international research a neural network model of the trajectory of and techno-economic development, which allows to calculate the level and rate of fuel and energy is developed and the method of evaluating the effectiveness of technological innovation projects on a range of qualitative and quantitative parameters based on the construction of the neuro-fuzzy solution tree is proposed. The developed model, in addition to the promising project choosing, explains the decision making process in an understandable way, in the structure of the neuro-diagnostic decision rules “If ... then.” Thus, this technique allows to determine the significance of the indicators (trends) of the formation of new technological cycles and to identify the reference parameters of the social dimension of the economy. Data received as a result of the intellectual analysis can be used by experts to assess the efficiency of the automated calculation of the effectiveness of technology projects in order to predict the scientific and technological development of the country and make necessary recommendations to the political and socio-economic spheres. Research results can be used both by private and public companies and organizations. This will help to assess and predict future changes, give proper recommendations to scientific institutions in key areas: such as security and counter-terrorism; living systems; nanosystem and materials Industry, information and telecommunication systems, advanced weapons, military and special equipment, management natural resources, transport, aviation and space systems, energy and energy efficiency

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates

Atomically thin boron nitride: a tunnelling barrier for graphene devices

We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/BN/graphene and graphite/BN/graphite devices is determined mainly by the changes in the density of states with bias voltage in the electrodes. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field; it offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.Comment: 7 pages, 5 figure

Non-minimally Coupled Cosmological Models with the Higgs-like Potentials and Negative Cosmological Constant

We study dynamics of non-minimally coupled scalar field cosmological models with Higgs-like potentials and a negative cosmological constant. In these models the inflationary stage of the Universe evolution changes into a quasi-cyclic stage of the Universe evolution with oscillation behaviour of the Hubble parameter from positive to negative values. Depending on the initial conditions the Hubble parameter can perform either one or several cycles before to become negative forever.Comment: 22 pages, 6 figures, v4:Section 2 expanded, references added, accepted for publication in Class. Quant. Gra

How close can one approach the Dirac point in graphene experimentally?

The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogeneity is as low as \approx10^8 cm^-2, allowing a neutral state with a few charge carriers per entire micron-scale device. Above liquid helium temperatures, the electronic properties of such devices are intrinsic, being governed by thermal excitations only. This yields that the Dirac point can be approached within 1 meV, a limit currently set by the remaining charge inhomogeneity. No sign of an insulating state is observed down to 1 K, which establishes the upper limit on a possible bandgap

Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric