Atomically-thin single-photon sources for quantum communication

To date, quantum communication widely relies on attenuated lasers for secret key generation. In future quantum networks, fundamental limitations resulting from their probabilistic photon distribution must be overcome by using deterministic quantum light sources. Confined excitons in monolayers of transition metal dichalcogenides (TMDCs) constitute an emerging type of emitter for quantum light generation. These atomically thin solid-state sources show appealing prospects for large-scale and low-cost device integration, meeting the demands of quantum information technologies. Here, we pioneer the practical suitability of TMDC devices in quantum communication. We employ a WSe2 monolayer single-photon source to emulate the BB84 protocol in a quantum key distribution (QKD) setup and achieve click rates of up to 66.95 kHz and antibunching values down to 0.034—a performance competitive with QKD experiments using semiconductor quantum dots or color centers in diamond. Our work opens the route towards wider applications of quantum information technologies using TMDC single-photon source

Multibridge VO2-Based Resistive Switching Devices in a Two-Terminal Configuration

Abstract Vanadium dioxide exhibits a hysteretic insulator‐to‐metal transition (IMT) near room temperature, forming the foundation for various forms of resistive switching devices. Usually, these are realized in the form of two‐terminal bridge‐like structures. The authors show here that by incorporating multiple, parallel VO2 bridges in a single two‐terminal device, a wider range of possible characteristics can be obtained, including a manifold of addressable resistance states. Different device configurations are studied, in which the number of bridges, the bridge dimensions, and the interbridge distances are varied. The switching characteristics of the multibridge devices are influenced by the thermal cross‐talk between the bridges. Scanning thermal microscopy (SThM) is used to image the current distributions at various voltage/current bias conditions. This work presents a route to realize devices exhibiting highly nonlinear, multistate current–voltage characteristics, with potential applications in, e.g., tunable electronic components and novel, neuromorphic information processing circuitry

Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy

Heat dissipation threatens the performance and lifetime of many electronic devices. As the size of devices shrinks to the nanoscale, we require spatially and thermally resolved thermometry to observe their fine thermal features. Scanning thermal microscopy (SThM) has proven to be a versatile measurement tool for characterizing the temperature at the surface of devices with nanoscale resolution. SThM can obtain qualitative thermal maps of a device using an operating principle based on a heat exchange process between a thermo-sensitive probe and the sample surface. However, the quantification of these thermal features is one of the most challenging parts of this technique. Developing reliable calibration approaches for SThM is therefore an essential aspect to accurately determine the temperature at the surface of a sample or device. In this work, we calibrate a thermo-resistive SThM probe using heater-thermometer metal lines with different widths (50 nm to 750 nm), which mimic variable probe-sample thermal exchange processes. The sensitivity of the SThM probe when scanning the metal lines is also evaluated under different probe and line temperatures. Our results reveal that the calibration factor depends on the probe measuring conditions and on the size of the surface heating features. This approach is validated by mapping the temperature profile of a phase change electronic device. Our analysis provides new insights on how to convert the thermo-resistive SThM probe signal to the scanned device temperature more accurately.</p

Uncovering and quantifying the subduction zone sulfur cycle from the slab perspective

Sulfur belongs among H2O, CO2, and Cl as one of the key volatiles in Earth’s chemical cycles. High oxygen fugacity, sulfur concentration, and δ34S values in volcanic arc rocks have been attributed to significant sulfate addition by slab fluids. However, sulfur speciation, flux, and isotope composition in slab-dehydrated fluids remain unclear. Here, we use high-pressure rocks and enclosed veins to provide direct constraints on subduction zone sulfur recycling for a typical oceanic lithosphere. Textural and thermodynamic evidence indicates the predominance of reduced sulfur species in slab fluids; those derived from metasediments, altered oceanic crust, and serpentinite have δ34S values of approximately −8‰, −1‰, and +8‰, respectively. Mass-balance calculations demonstrate that 6.4% (up to 20% maximum) of total subducted sulfur is released between 30–230 km depth, and the predominant sulfur loss takes place at 70–100 km with a net δ34S composition of −2.5 ± 3‰. We conclude that modest slab-to-wedge sulfur transport occurs, but that slab-derived fluids provide negligible sulfate to oxidize the sub-arc mantle and cannot deliver 34S-enriched sulfur to produce the positive δ34S signature in arc settings. Most sulfur has negative δ34S and is subducted into the deep mantle, which could cause a long-term increase in the δ34S of Earth surface reservoirs

Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO₂ Resistive Random Access Memories to Address Device Variability

Resistive random access memories (RRAM), based on the formation and rupture of conductive nanoscale filaments, have attracted increased attention for application in neuromorphic and in-memory computing. However, this technology is, in part, limited by its variability, which originates from the stochastic formation and extreme heating of its nanoscale filaments. In this study, we used scanning thermal microscopy (SThM) to assess the effect of filament-induced heat spreading on the surface of metal oxide RRAMs with different device designs. We evaluate the variability of TiO2 RRAM devices with area sizes of 2 × 2 and 5 × 5 μm2. Electrical characterization shows that the variability indicated by the standard deviation of the forming voltage is ∼2 times larger for 5 × 5 μm2 devices than for the 2 × 2 μm2 ones. Further knowledge on the reason for this variability is gained through the SThM thermal maps. These maps show that for 2 × 2 μm2 devices the formation of one filament, i.e., hot spot at the device surface, happens reliably at the same location, while the filament location varies for the 5 × 5 μm2 devices. The thermal information, combined with the electrical, interfacial, and geometric characteristics of the device, provides additional insights into the operation and variability of RRAMs. This work suggests thermal engineering and characterization routes to optimize the efficiency and reliability of these devices.</p

Spatially resolved thermometry of micro- and nano- devices using scanning thermal microscopy

Resumen del trabajo presentado en la 16th International Conference on Nanostructured Materials NANO 2022, celebrada en Sevilla (España), del 6 al 10 de junio de 2022Self-heating and localized temperatures play an important role in the principle of operation of nano- and micro-scale devices. On the one hand, heating in transistor devices affects the mobility of the carriers, limiting device performance and lifetime. On the other hand, energy dissipation in memory devices is connected to some drawbacks, like reliability and energy efficiency. Understanding the energy dissipation mechanisms is therefore essential for the evaluation, design and optimization of our electronic devices. Optical techniques, like infrared (IR) or Raman thermometry, can be used to obtain thermal maps of devices but their spatial resolution is diffraction limited, i.e., ~5 µm and ~0.5 µm respectively. Scanning thermal microscopy (SThM) is a scanning probe microscopy technique that allows thermal maps of devices with nanoscale resolution (~50 nm). Therefore, SThM is a promising tool for determining local hot spots and self-heating of different types of devices. In this work, we show how SThM can be employed for the characterization of heat dissipation in nanoelectronics. Our SThM uses a thermo-resistive probe whose electrical resistance varies with temperature. This probe can be used as a nanoscale sensor to map the temperature of devices locally. First, we present challenges associated with the calibration of this probe, which are key to obtaining quantitative measurements of device temperatures. Second, we show how a calibrated SThM system can be used to gain knowledge of the energy dissipation of memory devices. We focus on resistive random access (RRAM) and phase change (PCM) memory devices, which show promise for applications such as non-volatile memory and neuromorphic computing. The SThM thermal maps show the filamentary heating from RRAM devices as well as the Joule heated PCM device, displaying local temperature features. These maps provide insights into device operation, showing how the energy dissipates and offering new routes for developing more efficient switching mechanism

Tracing the effects of high-pressure metasomatic fluids and seawater alteration in blueschist-facies overprinted eclogites: Implications for subduction channel processes

Eclogites from the Tian Shan high-pressure/low-temperature (HP/LT) metamorphic belt show evidence for successively increasing metasomatic alteration with increasing retrograde, blueschist-facies overprint. To constrain the source(s) of the metasomatizing fluid and to evaluate elemental and isotopic changes during this overprint, two sequences of eclogite-blueschist transitions were investigated: A layered transition from eclogite to blueschist (FTS 9–1 sequence) and blueschist-facies overprinted pillow metabasalts (FTS 4 samples). Geochemical trends based on the relationships of K, Ba, Rb and Th are consistent with HP metasomatism, but distinct from typical seafloor alteration trends. In contrast, oxygen isotope ratios in garnet (δ18OV-SMOW = 7.3–8.7‰) and omphacite (δ18OV-SMOW = 8.2–9.7‰) are similar to δ18OV-SMOW in bulk low-temperature altered oceanic crust (AOC), suggesting O isotopic preservation of a seafloor alteration signature. Carbonate crystallization related to the metasomatic overprint demonstrate CO2 mobility during subduction and potential C storage in HP metamorphic rocks. Carbon isotope ratios in the two sequences differ markedly: Disseminated calcite in the layered FTS 9–1 sequence has δ13CV-PDB = − 9.14 ± 0.19‰, whereas vein-forming ankerite in the pillow metabasalts has δ13CV-PDB = − 2.08 ± 0.12‰. The ankerite reflects an inorganic marine/hydrothermal signature, as observed in ophiolites, whereas the low δ13CV-PDB values from the calcite point to a contribution of organic carbon. The time when the metasomatic overprint occurred is estimated to be ~ 320 ± 11 Ma based on a Rb-Sr isochron age of six blueschist samples from the pillow metabasalts, which is in agreement with active subduction in this region. Initial (T = 320 Ma) 87Sr/86Sr ratios for all HP/LT rocks range from 0.7059 – 0.7085, and εNd320Ma varies from − 0.4 to + 10.9. Both eclogite-blueschist sequences have initial Sr isotope compositions (87Sr/86Sr ~ 0.707) that are significantly higher than those of typical oceanic mantle-derived basalts. They are thought to derive from a fluid that preserved the Sr isotopic signature of seawater by fluid-rock interaction with seawater-altered oceanic lithosphere in a subduction channel. Mixing models between eclogite and various fluids suggest that the contribution of a sediment-derived fluid was likely less than 20%. A fluid predominantly derived from seawater-altered oceanic lithosphere is also supported by the calculated O isotope composition of the fluids (10.2 – 11.2‰). It is thus evident that subduction channel fluids carry complex, mixed elemental and isotopic signatures, which reflect the composition of their source rocks modified by interaction with various other lithologies. Highlights ► Eclogites from the Tian Shan show blueschist-facies metasomatic overprint ► Fluid-induced metasomatism occurred at 320 ± 11 Ma ► Fluid predominantly derived from seawater-altered oceanic lithosphere ► Carbonates reflect C sequestration of mixture of organic and inorganic component

First Observation of τ→3πηντ\tau\to 3\pi\eta\nu_{\tau} and τ→f1πντ\tau\to f_{1}\pi\nu_{\tau} Decays

We have observed new channels for $\tau$ decays with an $\eta$ in the final state. We study 3-prong tau decays, using the $\eta\to\gamma\gamma$ and \eta\to 3\piz decay modes and 1-prong decays with two \piz's using the $\eta\to\gamma\gamma$ channel. The measured branching fractions are \B(\tau^{-}\to \pi^{-}\pi^{-}\pi^{+}\eta\nu_{\tau}) =(3.4^{+0.6}_{-0.5}\pm0.6)\times10^{-4} and \B(\tau^{-}\to \pi^{-}2\piz\eta\nu_{\tau} =(1.4\pm0.6\pm0.3)\times10^{-4}. We observe clear evidence for $f_1\to\eta\pi\pi$ substructure and measure \B(\tau^{-}\to f_1\pi^{-}\nu_{\tau})=(5.8^{+1.4}_{-1.3}\pm1.8)\times10^{-4}. We have also searched for $\eta'(958)$ production and obtain 90% CL upper limits \B(\tau^{-}\to \pi^{-}\eta'\nu_\tau)<7.4\times10^{-5} and \B(\tau^{-}\to \pi^{-}\piz\eta'\nu_\tau)<8.0\times10^{-5}.Comment: 11 page postscript file, postscript file also available through http://w4.lns.cornell.edu/public/CLN