471 research outputs found

    Adomian decomposition method for analytical solution of a continuous arithmetic Asian option pricing model

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    One of the main issues of concern in financial mathematics has been a viable method for obtaining analytical solutions of the Black-Scholes model associated with Arithmetic Asian Option (AAO). In this paper, a proposed semi-analytical technique: Adomian Decomposition Method (ADM) is applied for the first time, for analytical solution of a continuous arithmetic Asian option model. The ADM gives the solution in explicit form with few iterations. The computational work involved is less. However, high level of accuracy is not neglected. The obtained solution conforms with those of Rogers and Shi (J. of Applied Probability 32: 1995, 1077-1088), and Elshegmani and Ahmad (ScienceAsia, 39S: 2013, 67–69). Thus, the proposed method is highly recommended for analytical solution of other versions of Asian option pricing models such as the geometric form for puts and calls, even in their time-fractional forms

    Adomian decomposition method for analytical solution of a continuous arithmetic Asian option pricing model

    Get PDF
    One of the main issues of concern in financial mathematics has been a viable method for obtaining analytical solutions of the Black-Scholes model associated with Arithmetic Asian Option (AAO). In this paper, a proposed semi-analytical technique: Adomian Decomposition Method (ADM) is applied for the first time, for analytical solution of a continuous arithmetic Asian option model. The ADM gives the solution in explicit form with few iterations. The computational work involved is less. However, high level of accuracy is not neglected. The obtained solution conforms with those of Rogers and Shi (J. of Applied Probability 32: 1995, 1077-1088), and Elshegmani and Ahmad (ScienceAsia, 39S: 2013, 67–69). Thus, the proposed method is highly recommended for analytical solution of other versions of Asian option pricing models such as the geometric form for puts and calls, even in their time-fractional forms

    Genetic Manipulation of a "Vacuolar" H+ -PPase: From Salt Tolerance to Yield Enhancement under Phosphorus-Deficient Soils

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    Article on the genetic manipulation of a vacuolar H+ -PPase and salt tolerance to yield enhancement under phosphorous-deficient soils

    SPS Impedance

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    For many years several measurements of the beam coupling impedance have been performed each year in both longitudinal and transverse planes of the CERN Super Proton Synchrotron to keep track of the evolution of its hardware. Copious types of equipments had to be modified or added in the past to allow the SPS to produce the nominal LHC beam. The next challenge would be the operation of the SPS with higher intensity for the LHC luminosity upgrade, which requires a good knowledge of the machine impedance and in particular of its major contributors. The current understanding of the measurements performed over the last few years is presented in this paper. In particular, this analysis reveals that the longitudinal impedance is reasonably well understood, while the situation is less satisfactory in the transverse planes, where about half of the measured impedance still needs to be identified

    Modulation of argon pressure as an option to control transmittance and resistivity of ZnO:Al films deposited by DC magnetron sputtering: on the dark yellow films at 10<sup>-7</sup> Torr base pressures

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    In a previous paper, we reported that thin films of ZnO:Al [aluminum-zinc oxide (AZO)] deposited after achieving a very low base pressure [from 4.0Ă—10-7 Torr (5.6Ă—10-5 Pa) to 5.7Ă—10-7 Torr (7.6Ă—10-5 Pa)] result dark yellow in color and are resistive. These are undesirable characteristics for the application of AZO thin films as front electrodes in solar cells. However, given the increasingly tendency in the acquisition of equipment that allow us to reach excellent vacuum levels, it is necessary to find the deposition conditions that lead to an improving of transmittance without greatly impacting the electrical properties of materials deposited after achieving these levels of vacuum. In this way, the present work is focused on AZO thin films deposited after achieving a very low base pressure value: 4.2Ă—10-7 Torr (5.6Ă—10-5 Pa). For this, we studied the effect of the variation of the oxygen volume percent in the argon/oxygen mixture (by maintaining the deposition pressure constant) and the effect of deposition pressure with only argon gas on the main properties of AZO thin films. The depositions were done at room temperature on glass substrates by direct-current magnetron sputtering with a power of 120 W (corresponding to a power density of 2.63 W/cm2). As results, we found that the variation of deposition pressure with only argon gas is a good option for the control of optical and electrical properties, since the addition of oxygen, although improves transmittance, greatly impacts on the electrical properties. Furthermore, an interesting correlation was found between the optical and electrical properties and the chemical composition of the AZO films, the latter depending on the argon pressure (for this, a careful X-ray photoelectron spectroscopy analysis was performed). Also, the inverse relationship between crystallinity and deposition rate was confirmed, in which deposition rate inversely depends on argon pressure
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