Design of reconfigurable RF circuits for self compensation

In this paper we will show how a combination of design choices allows for the design of a PVT robust RF front-end with minimum area, power and nominal specifications penalty.Peer ReviewedPostprint (published version

Electro-thermal coupling analysis methodology for RF circuits

In this paper we present an electro-thermal coupling simulation technique for RF circuits. The proposed methodology takes advantage of well established tools for frequency translating circuits in order to significantly reduce the computational resources needed when frequencies of interest are separated by orders of magnitude.Postprint (published version

On evaluating temperature as observable for CMOS technology variability

The temperature at surface of a silicon die depends on the activity of the circuits placed on it. In this paper, it is analyzed how Process, Voltage and Temperature (PVT) variations affect simultaneously some figures of merit (FoM) of some digital and analog circuits and the power dissipated by such circuits. It is shown that in some cases, a strong correlation exists between the variation of the circuit FoM and the variation of the dissipated power. Since local temperature increase at the silicon surface close to the circuit linearly depends on dissipated power, the results show that temperature can be considered as an observable magnitude for CMOS technology variability monitoring.Postprint (published version

Design of reconfigurable RF circuits for self compensation

In this paper we will show how a combination of design choices allows for the design of a PVT robust RF front-end with minimum area, power and nominal specifications penalty.Peer Reviewe

Design of reconfigurable RF circuits for self compensation

In this paper we will show how a combination of design choices allows for the design of a PVT robust RF front-end with minimum area, power and nominal specifications penalty.Peer Reviewe

A 75 pJ/bit All-Digital Quadrature Coherent IR-UWB Transceiver in 0.18 um CMOS

In this paper a 75 pJ/b all-digital quadrature coherent impulse radio ultra-wideband transceiver in 0.18 μm CMOS is presented. It consumes 42 mW operating at a 560 Mbps datarate. The receiver and transmitter share most of the components reducing the area. This design is optimal for low-power low-cost short-range high-speed communications.Peer ReviewedPostprint (published version

On line monitoring of RF power amplifiers with embedded temperature sensors

In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present experimental results obtained with a 65 nm CMOS IC that contains a 2GHz linear class A Power Amplifier and a very simple differential temperature sensor. Results show that the PA output power can be tracked from DC temperature measurements.Peer ReviewedPostprint (published version

Electro-thermal coupling analysis methodology for RF circuits

In this paper we present an electro-thermal coupling simulation technique for RF circuits. The proposed methodology takes advantage of well established tools for frequency translating circuits in order to significantly reduce the computational resources needed when frequencies of interest are separated by orders of magnitude

On line monitoring of RF power amplifiers with embedded temperature sensors

In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present experimental results obtained with a 65 nm CMOS IC that contains a 2GHz linear class A Power Amplifier and a very simple differential temperature sensor. Results show that the PA output power can be tracked from DC temperature measurements.Peer Reviewe

Process and temperature compensation for RF low-noise amplifiers and mixers

Temperature and process variations have become key issues in the design of integrated circuits using deep submicron technologies. In RF front-end circuitry, many characteristics must be compensated in order to maintain acceptable performance across all process corners and throughout the temperature range. This paper proposes a new technique consisting of a compensation circuit that adapts and generates the appropriate bias voltage for LNAs and mixers so that the variability with temperature and process corners of their main performance metrics (S-parameters, gain, noise figure, etc.) is minimized