117 research outputs found
Ab initio variational approach for evaluating lattice thermal conductivity
We present a first-principles theoretical approach for evaluating the lattice
thermal conductivity based on the exact solution of the Boltzmann transport
equation. We use the variational principle and the conjugate gradient scheme,
which provide us with an algorithm faster than the one previously used in
literature and able to always converge to the exact solution. Three-phonon
normal and umklapp collision, isotope scattering and border effects are
rigorously treated in the calculation. Good agreement with experimental data
for diamond is found. Moreover we show that by growing more enriched diamond
samples it is possible to achieve values of thermal conductivity up to three
times larger than the commonly observed in isotopically enriched diamond
samples with 99.93% C12 and 0.07 C13
Boron nitride for excitonics, nano photonics, and quantum technologies
We review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we highlight its importance from optoelectronics side, for simple devices operating in the deep ultraviolet, in view of sanitary applications. Emphasis will be directed towards the unusually strong efficiency of the exciton-phonon coupling in this indirect band gap semiconductor. Second, we shift towards nanophotonics, for the management of hyper-magnification and of medical imaging. Here, advantage is taken of the efficient coupling of the electromagnetic field with some of its phonons, those interacting with light at 12 and 6 yin in vacuum. Third, we present the different defects that are currently studied for their propensity to behave as single photon emitters, in the perspective to help them becoming challengers of the NV centres in diamond or of the double vacancy in silicon carbide in the field of modern and developing quantum technologies.This work was financially supported in France by the contract BONASPES (ANR-19-CE30-0007-02) under the umbrella of the publicly funded Investissements d'Avenir program managed by the French ANR agency. This work has been supported in Spain the Spanish MINECO/FEDER under Contracts No. MAT2015-71035-R and No. MAT2016-75586-C4-1-P.Peer reviewe
Excitons in van der Waals materials : From monolayer to bulk hexagonal boron nitride
We present a general picture of the exciton properties of layered materials in terms of the excitations of their single-layer building blocks. To this end, we derive a model excitonic Hamiltonian by drawing an analogy with molecular crystals, which are other prototypical van der Waals materials. We employ this simplified model to analyze in detail the excitation spectrum of hexagonal boron nitride (hBN) that we have obtained from the ab initio solution of the many-body Bethe-Salpeter equation as a function of momentum. In this way, we identify the character of the lowest-energy excitons in hBN, discuss the effects of the interlayer hopping and the electron-hole exchange interaction on the exciton dispersion, and illustrate the relation between exciton and plasmon excitations in layered materials.Peer reviewe
Exciton band structure of molybdenum disulfide: from monolayer to bulk
Exciton band structures analysis provides a powerful tool to identify the exciton character of
materials, from bulk to isolated systems, and goes beyond the mere analysis of the optical spectra.
In this work, we focus on the exciton properties of molybdenum sisulfide (MoS 2 ) by solving the ab
initio many-body Bethe–Salpeter equation, as a function of momentum, to obtain the excitation
spectra of both monolayer and bulk MoS 2 . We analyse the spectrum and the exciton dispersion on
the basis of a model excitonic Hamiltonian capable of providing an efficient description of the
excitations in the bulk crystal, starting from the knowledge of the excitons of a single layer. In this
way, we obtain a general characterization of both bright and darks excitons in terms of the interplay
between the electronic band dispersion (i.e. interlayer hopping) and the electron–hole exchange
interaction. We identify for both the 2D and the 3D limiting cases the character of the
lowest-energy excitons in MoS 2 , we explain the effects and relative weights of both band dispersion
and electron–hole exchange interaction and finally we interpret the differences observed when
changing the dimensionality of the system
Simulation of dimensionality effects in thermal transport
The discovery of nanostructures and the development of growth and fabrication
techniques of one- and two-dimensional materials provide the possibility to
probe experimentally heat transport in low-dimensional systems. Nevertheless
measuring the thermal conductivity of these systems is extremely challenging
and subject to large uncertainties, thus hindering the chance for a direct
comparison between experiments and statistical physics models. Atomistic
simulations of realistic nanostructures provide the ideal bridge between
abstract models and experiments. After briefly introducing the state of the art
of heat transport measurement in nanostructures, and numerical techniques to
simulate realistic systems at atomistic level, we review the contribution of
lattice dynamics and molecular dynamics simulation to understanding nanoscale
thermal transport in systems with reduced dimensionality. We focus on the
effect of dimensionality in determining the phononic properties of carbon and
semiconducting nanostructures, specifically considering the cases of carbon
nanotubes, graphene and of silicon nanowires and ultra-thin membranes,
underlying analogies and differences with abstract lattice models.Comment: 30 pages, 21 figures. Review paper, to appear in the Springer Lecture
Notes in Physics volume "Thermal transport in low dimensions: from
statistical physics to nanoscale heat transfer" (S. Lepri ed.
Exciton energy-momentum map of hexagonal boron nitride
Understanding and controlling the way excitons propagate in solids is a key for tailoring materials with improved optoelectronic properties. A fundamental step in this direction is the determination of the exciton energy-momentum dispersion. Here, thanks to the solution of the parameter-free Bethe- Salpeter equation (BSE), we draw and explain the exciton energy-momentum map of hexagonal boron nitride (h-BN) in the first three Brillouin zones. We show that h-BN displays strong excitonic effects not only in the optical spectra at vanishing momentum , as previously reported, but also at large . We validate our theoretical predictions by assessing the calculated exciton map by means of an inelastic x-ray scattering (IXS) experiment. Moreover, we solve the discrepancies between previous experimental data and calculations, proving then that the BSE is highly accurate through the whole momentum range. Therefore, these results put forward the combination BSE and IXS as the tool of choice for addressing the exciton dynamics in complex materials.Understanding and controlling the way excitons propagate in solids is a key for tailoring materials with improved optoelectronic properties. A fundamental step in this direction is the determination of the exciton energy-momentum dispersion. Here, thanks to the solution of the parameter-free Bethe-Salpeter equation (BSE), we draw and explain the exciton energy-momentum map of hexagonal boron nitride (h-BN) in the first three Brillouin zones. We show that h-BN displays strong excitonic effects not only in the optical spectra at vanishing momentum q, as previously reported, but also at large q. We validate our theoretical predictions by assessing the calculated exciton map by means of an inelastic x-ray scattering (IXS) experiment. Moreover, we solve the discrepancies between previous experimental data and calculations, proving then that the BSE is highly accurate through the whole momentum range. Therefore, these results put forward the combination BSE and IXS as the tool of choice for addressing the exciton dynamics in complex materials.Peer reviewe
Modeling heat transport in crystals and glasses from a unified lattice-dynamical approach
We introduce a novel approach to model heat transport in solids, based on the Green-Kubo theory of linear response. It naturally bridges the Boltzmann kinetic approach in crystals and the Allen-Feldman model in glasses, leveraging interatomic force constants and normal-mode linewidths computed at mechanical equilibrium. At variance with molecular dynamics, our approach naturally and easily accounts for quantum mechanical effects in energy transport. Our methodology is carefully validated against results for crystalline and amorphous silicon from equilibrium molecular dynamics and, in the former case, from the Boltzmann transport equation
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