Double Secret Protection: Bridging Federal and State Law To Protect Privacy Rights for Telemental and Mobile Health Users

Mental health care in the United States is plagued by stigma, cost, and access issues that prevent many people from seeking and continuing treatment for mental health conditions. Emergent technology, however, may offer a solution. Through telemental health, patients can connect with providers remotely—avoiding stigmatizing situations that can arise from traditional healthcare delivery, receiving more affordable care, and reaching providers across geographic boundaries. And with mobile health technology, people can use smart phone applications both to self-monitor their mental health and to communicate with their doctors. But people do not want to take advantage of telemental and mobile health unless their privacy is protected. After evaluating the applicability of current health information privacy law to these new forms of treatment, this Note proposes changes to the federal regime to protect privacy rights for telemental and mobile health users

Ti3SiC2-formation during Ti–C–Si multilayer deposition by magnetron sputtering at 650 °C

Titanium Silicon Carbide films were deposited from three separate magnetrons with elemental targets onto Si wafer substrates. The substrate was moved in a circular motion such that the substrate faces each magnetron in turn and only one atomic species (Ti, Si or C) is deposited at a time. This allows layer-by-layer film deposition. Material average composition was determined to Ti0.47Si0.14C0.39 by energy-dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and Raman spectroscopy were used to gain insights into thin film atomic structure arrangements. Using this new deposition technique formation of Ti3SiC2 MAX phase was obtained at a deposition temperature of 650 °C, while at lower temperatures only silicides and carbides are formed. Significant sharpening of Raman E2g and Ag peaks associated with Ti3SiC2 formation was observed

Thick and Thin Ti2AlC Coatings

This Thesis explores the deposition techniques of magnetron sputtering and high velocity oxy-fuel (HVOF) spraying for Ti2AlC as a promising high-temperature material. Magnetron sputtering aims at producing thin (≤1 μm) Ti2AlC films of high crystal quality for use as a model system in understanding the material’s basic properties. HVOF is a new method for deposition of thick (≥200 μm) coatings by spraying Ti2AlC powder, with the aim of transferring the good bulk properties to coatings. The oxidation behavior of Ti2AlC coatings has been investigated for temperatures up to 1200 °C in air. As-deposited Ti2AlC(0001) thin films decompose into TiC during vacuum annealing at 700 °C by out-diffusion of Al as shown by x-ray diffraction analysis. The release of Al starts already at 500 °C in ambient air as driven by aluminum oxide formation on the film surface where the oxide initially forms clusters as observed by electron microscopy. While sputtering from a Ti2AlC target is simpler than by using different elemental targets, the resulting film composition differs from the target stoichiometry. This is due to differences in energy and angular distribution of the sputtered species and evaporation of Al at substrate temperatures above 700 °C. The composition can be compensated for by adding Ti to bind the Al and obtain phase-pure Ti2AlC coatings. For HVOF, I demonstrate how the total gas flow of a H2/O2 mixture (441-953 liter/min) and the powder grain size (30-56 μm) determine the thickness, density, and microstructure of the coatings. High gas flow and small grain size yield thick coatings of 210 μm with a low porosity of 2-8 % and a tensile stress of ≥80 MPa. A fraction of the Ti2AlC powder decomposes during spraying into TiC, Ti3AlC2, and Ti-Al alloys. The coatings also contain as much as 25 at.% O since the powder partly oxidizes during the spraying process. Increasing the powder size and decreasing the total gas flow yield a higher amount of Ti2AlC, but produces thinner coatings with lower cohesion. Post-annealing of the coatings at 900 °C in vacuum increases the Ti2AlC content due to a reversible phase transformation of the as-sprayed material. The high oxygen content, however, hinders the coating to completely transform into Ti2AlC and deteriorates its oxidation resistance. The work thus offers insights to the key parameters for optimizing Ti2AlC coating processing

Characterization of Ti2AlC coatings deposited with High Velocity Oxy-Fuel and Magnetron Sputtering Techniques

This Thesis presents two different deposition techniques for the synthesis of Ti2AlC coatings. First, I have fabricated Ti2AlC coatings by high velocity oxy-fuel (HVOF) spraying. Analysis with scanning electron microscopy (SEM) show dense coatings with thicknesses of ~150 µm when spraying with a MAXTHAL 211TM Ti2AlC powder of size ~38 µm in an H2/O2 gas flow. The films showed good adhesion to stainless steel substrates as determined by bending tests and the hardness was 3-5 GPa. X-ray diffraction (XRD) detected minority phases of Ti3AlC2, TiC, and AlxTiy alloys. The use of a larger powder size of 56 µm resulted in an increased amount of cracks and delaminations in the coatings. This was explained by less melted material, which is needed as a binding material. Second, magnetron sputtering of thin films was performed with a MAXTHAL 211TM Ti2AlC compound target. Depositions were made at substrate temperatures between ambient and 1000 °C. Elastic recoil detection analysis (ERDA) shows that the films exhibit a C composition between 42 and 52 at% which differs from the nominal composition of 25 at% for the Ti2AlC-target. The Al content, in turn, depends on the substrate temperature as Al is likely to start to evaporate around 700 °C. Co-sputtering with Ti target at a temperature of 700 °C, however, yielded Ti2AlC films with only minority contents of TiC. Thus, the addition of Ti is suggested to have two beneficial roles of balancing out excess of C and to retain Al by providing for more stoichiometric Ti2AlC synthesis conditions. Transmission electron microscopy and X-ray pole figures show that the Ti2AlC grains grow in two preferred orientations; epitaxial Ti2AlC (0001) // Al2O3 (0001) and with 37° tilted basal planes of Ti2AlC (101̅7) // Al2O3 (0001).Report code: LIU-TEK-LIC-2008:15.</p

Characterization of Ti 2 AlC Coatings Deposited with High Velocity Oxy-Fuel and Magnetron Sputtering Techniques Included Papers Paper I Ti 2 AlC coatings deposited by High Velocity Oxy-Fuel spraying Paper II Direct current magnetron sputtering from Ti 2 A

Abstract This Thesis presents two different deposition techniques for the synthesis of Ti 2 AlC coatings

Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC

Sputter deposition from a Ti2AlC target was found to yield Ti-Al-C films with a composition that deviates from the target composition of 2:1:1. For increasing substrate temperature from ambient to 1000 degrees C, the Al content decreased from 22 at.% to 5 at.%, due to re-evaporation. The C content in as-deposited films was equal to or higher than the Ti content. Mass spectrometry of the plasma revealed that the Ti and Al species were essentially thermalized, while a large fraction of C with energies andgt;4 eV was detected. Co-sputtering with Ti yielded a film stoichiometry of 2:0.8:0.9 for Ti:Al:C, which enabled growth of Ti2AlC. These results indicate that an additional Ti flux balances the excess C and therefore provides for more stoichiometric Ti2AlC synthesis conditions.Original Publication:Jenny Frodelius, Per Eklund, Manfred Beckers, Per Persson, Hans Högberg and Lars Hultman, Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC, 2010, THIN SOLID FILMS, (518), 6, 1621-1626.http://dx.doi.org/10.1016/j.tsf.2009.11.059Copyright: Elsevier Science B.V., Amsterdam.http://www.elsevier.com