Calibration of pipeline ADC with pruned Volterra kernels

A Volterra model is used to calibrate a pipeline ADC simulated in Cadence Virtuoso using the STMicroelectronics CMOS 45 nm process. The ADC was designed to work at 50 MSps, but it is simulated at up to 125 MSps, proving that calibration using a Volterra model can significantly increase sampling frequency. Equivalent number of bits (ENOB) improves by 1-2.5 bits (6-15 dB) with 37101 model parameters. The complexity of the calibration algorithm is reduced using different lengths for each Volterra kernels and performing iterative pruning. System identification is performed by least squares techniques with a set of sinusoids at different frequencies spanning the whole Nyquist band. A comparison with simplified Volterra models proposed in the literature shows better performance for the pruned Volterra model with comparable complexity, improving linearity by as much as 1.5 bits more than the other techniques

A Simple Technique for Fast Digital Background Calibration of A/D Converters

A modification of the background digital calibration procedure for A/D converters by Li and Moon is proposed, based on a method to improve the speed of convergence and the accuracy of the calibration. The procedure exploits a colored random sequence in the calibration algorithm, and can be applied both for narrowband input signals and for baseband signals, with a slight penalty on the analog bandwidth of the converter. By improving the signal-to-calibration-noise ratio of the statistical estimation of the error parameters, our proposed technique can be employed either to improve linearity or to make the calibration procedure faster. A practical method to generate the random sequence with minimum overhead with respect to a simple PRBS is also presented. Simulations have been performed on a 14-bit pipeline A/D converter in which the first 4 stages have been calibrated, showing a 15 dB improvement in THD and SFDR for the same calibration time with respect to the original technique

A Novel differential to single-ended converter for ultra-low-voltage inverter-based OTAs

For the design of inverter-based OTAs with differential input and single-ended output, the differential to single-ended (D2S) converter is a key building block. In fact, the performance of the D2S strongly affects the overall common-mode rejection ratio (CMRR) and input common-mode range (ICMR) of the whole OTA. In recent literature, inverter-based OTAs rely on a D2S topology based on an inverter driving another inverter with the input and output tight together which behaves as a “diode" connected device to implement a voltage gain approximately equal to -1. However, since this approach is based on the matching of the inverters, the performance of this D2S results sensitive to PVT variations if the bias point of the inverters is not properly stabilized. In this paper we present a novel topology of inverterbased D2S converter, exploiting an auxiliary, standard-cell-based, error amplifier and a local feedback loop. The proposed D2S, compared to the conventional one, exhibits higher CMRR, improved ICMR and better robustness with respect to PVT variations.We present also an ULV, standard-cell-based OTA, which exploits the proposed D2S converter and shows excellent performance figures of merit with low area footprint

A 0.3 V, rail-to-rail, ultralow-power, non-tailed, body-driven, sub-threshold amplifier

A novel, inverter-based, fully differential, body-driven, rail-to-rail, input stage topology is proposed in this paper. The input stage exploits a replica bias control loop to set the common mode current and a common mode feed-forward strategy to set its output common mode voltage. This novel cell is used to build an ultralow voltage (ULV), ultralow-power (ULP), two-stage, unbuffered operational amplifier. A dual path compensation strategy is exploited to improve the frequency response of the circuit. The amplifier has been designed in a commercial 130 nm CMOS technology from STMicroelectronics and is able to operate with a nominal supply voltage of 0.3 V and a power consumption as low as 11.4 nW, while showing about 65 dB gain, a gain bandwidth product around 3.6 kHz with a 50 pF load capacitance and a common mode rejection ratio (CMRR) in excess of 60 dB. Transistor-level simulations show that the proposed circuit outperforms most of the state of the art amplifiers in terms of the main figures of merit. The results of extensive parametric and Monte Carlo simulations have demonstrated the robustness of the proposed circuit to PVT and mismatch variations

Methods for Model Complexity Reduction for the Nonlinear Calibration of Amplifiers Using Volterra Kernels

Volterra models allow modeling nonlinear dynamical systems, even though they require the estimation of a large number of parameters and have, consequently, potentially large computational costs. The pruning of Volterra models is thus of fundamental importance to reduce the computational costs of nonlinear calibration, and improve stability and speed, while preserving accuracy. Several techniques (LASSO, DOMP and OBS) and their variants (WLASSO and OBD) are compared in this paper for the experimental calibration of an IF amplifier. The results show that Volterra models can be simplified, yielding models that are 4–5 times sparser, with a limited impact on accuracy. About 6 dB of improved Error Vector Magnitude (EVM) is obtained, improving the dynamic range of the amplifiers. The Symbol Error Rate (SER) is greatly reduced by calibration at a large input power, and pruning reduces the model complexity without hindering SER. Hence, pruning allows improving the dynamic range of the amplifier, with almost an order of magnitude reduction in model complexity. We propose the OBS technique, used in the neural network field, in conjunction with the better known DOMP technique, to prune the model with the best accuracy. The simulations show, in fact, that the OBS and DOMP techniques outperform the others, and OBD, LASSO and WLASSO are, in turn, less efficient. A methodology for pruning in the complex domain is described, based on the Frisch–Waugh–Lovell (FWL) theorem, to separate the linear and nonlinear sections of the model. This is essential because linear models are used for equalization and cannot be pruned to preserve model generality vis-a-vis channel variations, whereas nonlinear models must be pruned as much as possible to minimize the computational overhead. This methodology can be extended to models other than the Volterra one, as the only conditions we impose on the nonlinear model are that it is feedforward and linear in the parameters

A power efficient frequency divider with 55 GHz self-oscillating frequency in SiGe BiCMOS

A power efficient static frequency divider in commercial 55 nm SiGe BiCMOS technology isreported. A standard Current Mode Logic (CML)-based architecture is adopted, and optimizationof layout, biasing and transistor sizes allows achieving a maximum input frequency of 63 GHz anda self-oscillating frequency of 55 GHz, while consuming 23.7 mW from a 3 V supply. This resultsin high efficiency with respect to other static frequency dividers in BiCMOS technology presentedin the literature. The divider topology does not use inductors, thus optimizing the area footprint:the divider core occupies 60×65μm2on silicon

A 0.3V Rail-to-Rail Three-Stage OTA With High DC Gain and Improved Robustness to PVT Variations

This paper presents a novel 0.3V rail-to-rail body-driven three-stage operational transconductance amplifier (OTA). The proposed OTA architecture allows achieving high DC gain in spite of the bulk-driven input. This is due to the doubled body transconductance at the first and third stages, and to a high gain, gate-driven second stage. The bias current in each branch of the OTA is accurately set through gate-driven or bulk-driven current mirrors, thus guaranteeing an outstanding stability of main OTA performance parameters to PVT variations. In the first stage, the input signals drive the bulk terminals of both NMOS and PMOS transistors in a complementary fashion, allowing a rail-to-rail input common mode range (ICMR). The second stage is a gate-driven, complementary pseudo-differential stage with an high DC gain and a local CMFB. The third stage implements the differential-to-single-ended conversion through a body-driven complementary pseudo-differential pair and a gate-driven current mirror. Thanks to the adoption of two fully differential stages with common mode feedback (CMFB) loop, the common-mode rejection ratio (CMRR) in typical conditions is greatly improved with respect to other ultra-low-voltage (ULV) bulk-driven OTAs. The OTA has been fabricated in a commercial 130nm CMOS process from STMicroelectronics. Its area is about 0.002 mm2 , and power consumption is less than 35nW at the supply-voltage of 0.3V. With a load capacitance of 35pF, the OTA exhibits a DC gain and a unity-gain frequency of about 85dB and 10kHz, respectively

A 0.3 V rail-to-rail ultra-low-power OTA with improved bandwidth and slew rate

In this paper, we present a novel operational transconductance amplifier (OTA) topology based on a dual-path body-driven input stage that exploits a body-driven current mirror-active load and targets ultra-low-power (ULP) and ultra-low-voltage (ULV) applications, such as IoT or biomedical devices. The proposed OTA exhibits only one high-impedance node, and can therefore be compensated at the output stage, thus not requiring Miller compensation. The input stage ensures rail-to-rail input common-mode range, whereas the gate-driven output stage ensures both a high open-loop gain and an enhanced slew rate. The proposed amplifier was designed in an STMicroelectronics 130 nm CMOS process with a nominal supply voltage of only 0.3 V, and it achieved very good values for both the small-signal and large-signal Figures of Merit. Extensive PVT (process, supply voltage, and temperature) and mismatch simulations are reported to prove the robustness of the proposed amplifier

Low power class-AB VCII with extended dynamic range

voltage swing both at the X terminal and at the Z terminal. The VCII consists of a regulated common gate configuration at the Y current input terminal and a class-AB complementary-MOS closed loop output voltage follower that ensures the voltage buffering action between the voltage input X and the voltage output Z terminals. Spice simulation results using AMS 0.35 μm with a ±0.9 V supply voltage are provided to demonstrate the validity of the proposed topology. With a total power consumption of 28 μW, the VCII achieves a voltage swing at the X terminal of ±0.8 V, whereas a ±0.72 V is achieved on the Z terminal. Simulation results for DC and AC voltage and current gains are given, as well as harmonic distortions and noise figures. A final comparison table is also presented, where the proposed VCII is compared with other solutions presented in the literature

Progettazione di moduli multifunzionali monolitici per ricevitori di sistemi di comunicazione ottica

Dottorato di ricerca in ingegneria elettronica. 12. ciclo. Tutore P. MariettiConsiglio Nazionale delle Ricerche - Biblioteca Centrale - P.le Aldo Moro, 7, Rome; Biblioteca Nazionale Centrale - P.za Cavalleggeri, 1, Florence / CNR - Consiglio Nazionale delle RichercheSIGLEITItal