Dynamics of disordered quantum Hall crystals

Charge density waves are thought to be common in two-dimensional electron systems in quantizing magnetic fields. Such phases are formed by the quasiparticles of the topmost occupied Landau level when it is partially filled. One class of charge density wave phases can be described as electron solids. In weak magnetic fields (at high Landau levels) solids with many particles per unit cell - bubble phases - predominate. In strong magnetic fields (at the lowest Landau level) only crystals with one particle per unit cell - Wigner crystals - can form. Experimental identification of these phases is facilitated by the fact that even a weak disorder influences their dc and ac magnetotransport in a very specific way. In the ac domain, a range of frequencies appears where the electromagnetic response is dominated by magnetophonon collective modes. The effect of disorder is to localize the collective modes and to create an inhomogeneously broadened absorption line, the pinning mode. In recent microwave experiments pinning modes have been discovered both at the lowest and at high Landau levels. We present the theory of the pinning mode for a classical two-dimensional electron crystal collectively pinned by weak impurities. We show that long-range Coulomb interaction causes a dramatic line narrowing, in qualitative agreement with the experiments.Comment: 6 pages, 3 figures. To be presented at EP2DS-15, Nara, Japan. One typo correcte

Comment on ``Analytic Structure of One-Dimensional Localization Theory: Re-Examining Mott's Law''

The low-frequency conductivity of a disordered Fermi gas in one spatial dimension is governed by the Mott-Berezinskii law $\sigma(\omega) \propto \omega^2 \ln \omega^2$. In a recent Letter [Phys. Rev. Lett. 84, 1760 (2000)] A. O. Gogolin claimed that this law is invalid, challenging our basic understanding of disordered systems and a massive amount of previous theoretical work. We point out two calculational errors in Gogolin's paper. Once we correct them, the Mott-Berezinskii formula is fully recovered. We also present numerical results supporting the Mott-Berezinskii formula but ruling out that of Gogolin.Comment: 1 page, 1 figure, RevTeX

Screening in gated bilayer graphene via variational calculus

We analyze the response of bilayer graphene to an external transverse electric field using a variational method. A previous attempt to do so in a recent paper by Falkovsky [Phys. Rev. B 80, 113413 (2009)] is shown to be flawed. Our calculation reaffirms the original results obtained by one of us [E. McCann, Phys. Rev. B 74, 161403(R) (2006)] by a different method. Finally, we generalize these original results to describe a dual-gated bilayer graphene device.Comment: 4 pages, 1 figur

Electrostatic theory for imaging experiments on local charges in quantum Hall systems

We use a simple electrostatic treatment to model recent experiments on quantum Hall systems, in which charging of localised states by addition of integer or fractionally-charged quasiparticles is observed. Treating the localised state as a compressible quantum dot or antidot embedded in an incompressible background, we calculate the electrostatic potential in its vicinity as a function of its charge, and the chemical potential values at which its charge changes. The results offer a quantitative framework for analysis of the observations.Comment: 4 pages, 3 figure

Neutrality point of graphene with coplanar charged impurities

The ground-state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and hole puddles. Statistical properties of this density distribution as well as the charge compressibility of the system are calculated in the leading-log approximation. The conductivity depends logarithmically on $\alpha$, the dimensionless strength of the Coulomb interaction. The theory is asymptotically exact when $\alpha$ is small, which is the case for graphene on a substrate with a high dielectric constant.Comment: (v3) 4 pages main paper, 2 pages supplementary info, no figure

Electronic response of graphene to linelike charge perturbations

The problem of electrostatic screening of a charged line by undoped or weakly doped graphene is treated beyond the linear-response theory. The induced electron density is found to be approximately doping independent, n(x)~(log x)^2/x^2, at intermediate distances x from the charged line. At larger x, twin p-n junctions may form if the external perturbation is repulsive for graphene charge carriers. The effect of such inhomogeneities on conductance and quantum capacitance of graphene is calculated. The results are relevant for transport properties of graphene grain boundaries and for local electrostatic control of graphene with ultrathin gates.Comment: Fixed typos and added reference